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    K10A50 Search Results

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    Toshiba America Electronic Components

    Toshiba America Electronic Components TK10A50W,S5X

    X35 PB-F POWER MOSFET TRANSISTOR
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    DigiKey TK10A50W,S5X Tube 113 1
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    Avnet Americas TK10A50W,S5X Tube 16 Weeks 50
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    Mouser Electronics TK10A50W,S5X
    • 1 $2.58
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    • 100 $1.14
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    Toshiba America Electronic Components TK10A50D(STA4,Q,M)

    MOSFET N-CH 500V 10A TO220SIS
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    DigiKey TK10A50D(STA4,Q,M) Tube 63 1
    • 1 $2.18
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    Avnet Americas TK10A50D(STA4,Q,M) Tube 16 Weeks 50
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    Mouser Electronics TK10A50D(STA4,Q,M) 144
    • 1 $2.14
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    EBV Elektronik TK10A50D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK10A50DSTA4

    SILICON N CHANNEL MOS TYPE (PI-MOSVII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 10A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TK10A50DSTA4 50
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    Toshiba America Electronic Components TK10A50W,S5X(M

    Trans MOSFET NCH 500V 97A 3Pin TO220SIS Tube (Alt: TK10A50W,S5X(M)
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    EBV Elektronik TK10A50W,S5X(M 23 Weeks 50
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    K10A50 Datasheets Context Search

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    K10A50D

    Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D
    Contextual Info: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		TK10A50D SC-67 2-10U1B 20070701-JA K10A50D K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D PDF

    K10A50D

    Abstract: K10A50 TK10A50D K*A50D
    Contextual Info: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		TK10A50D SC-67 2-10U1B K10A50D K10A50 TK10A50D K*A50D PDF

    toshiba K10A50D

    Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
    Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D toshiba K10A50D k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a PDF

    k10a50d

    Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D k10a50d PDF

    K10A50

    Abstract: K10A50D toshiba marking code transistor k10a50d
    Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D K10A50 K10A50D toshiba marking code transistor k10a50d PDF

    K10A50

    Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D
    Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D K10A50 K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D PDF