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    Toshiba America Electronic Components

    Toshiba America Electronic Components TK10A50W,S5X

    MOSFET N-Channel Enhancement Mode 500V 3-Pin TO-220SIS - Rail/Tube (Alt: TK10A50W,S5X)
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    Avnet Americas TK10A50W,S5X Tube 24 Weeks 50
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    Mouser Electronics TK10A50W,S5X
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    Toshiba America Electronic Components TK10A50D(STA4,Q,M)

    Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK10A50D(STA4,Q,M))
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    Avnet Americas TK10A50D(STA4,Q,M) Tube 16 Weeks 50
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    Mouser Electronics TK10A50D(STA4,Q,M) 205
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    Newark TK10A50D(STA4,Q,M) Bulk 50
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    EBV Elektronik TK10A50D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK10A50W,S5X(M

    Halbleiterbauelement, Transistor, Pwr-Mo; |Toshiba TK10A50W, S5X(M
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    Newark TK10A50W,S5X(M Bulk 50
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    EBV Elektronik TK10A50W,S5X(M 23 Weeks 50
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    Toshiba America Electronic Components TK10A50DSTA4

    SILICON N CHANNEL MOS TYPE (PI-MOSVII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 10A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TK10A50DSTA4 50
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    K10A50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K10A50D

    Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D
    Contextual Info: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		tk10a50dsc-672-10u1b20070701-ja+5k10a50dk10a50vdd400k*a50dtoshiba k10a50d PDF

    K10A50D

    Abstract: K10A50 TK10A50D K*A50D
    Contextual Info: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		tk10a50dsc-672-10u1bk10a50d+2k10a50k*a50d PDF

    toshiba K10A50D

    Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
    Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		tk10a50dtoshiba k10a50dk10a50dtoshiba marking code transistor k10a50d+6transistor k10a50dk10a50d datak10a50k10a50d transistork*a50dk10a PDF

    k10a50d

    Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		tk10a50dk10a50d PDF

    K10A50

    Abstract: K10A50D toshiba marking code transistor k10a50d
    Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		tk10a50dk10a50k10a50dtoshiba marking code transistor k10a50d PDF

    K10A50

    Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D
    Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		tk10a50dk10a50k10a50dtoshiba k10a50d+5toshiba marking code transistor k10a50dk*a50dk10a50d datatransistor k10a50dk10a PDF