K10A Search Results

K10A50D

Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D
Contextual Info: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)

R6522P

Abstract: 4320N24-U DBX 2180 k15a that4320 EC10N compressor inverter ac -dc oa1 transistor JESD22-A113-B K12A
Contextual Info: Pre-trimmed Low-voltage Low-power Analog Engine Dynamics Processor IC THAT 4320 FEATURES APPLICATIONS • Pre-trimmed VCA & RMS detector • Companding noise reduction • Wide supply voltage range: 4.5V~16V • Wireless microphones • Low supply current: 3.7mA typ. 5V

K1F003MLH

Abstract: K1F003ULH K1F027MLH K1D004QLH K30D002UP K1D024MLH K50H004UP K1C003QLH K30H004UP K2E003WLH
Contextual Info: An extended offer, three ranges: your K10 solution K1/ K2 K1/ K2 K30 . K150 12 and 20 Amperes switches stepping switches 2 to 5 step reversing switches changeover switches (1 to 4 pole) ammeter and voltmeter switches multi-fixing or by Ø 22 mm hole 45 x 45 mm front plate

k10a60d

Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

k10a60d

Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d
Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: |Yfs| = 6.0S (typ.)

K10C

Abstract: K07A
Contextual Info: IFT & O SC.COILS • mmßffüüüg IFT & O SC.COILS • üTSrttii HOW TO ORDER • $ # J F O R EXAMPLE K 07 i A B 150 ~ r ~ r A — K ~ i C i D E g g Km « a Item Code Description K i r a M ît +JS Product type: IFT A g a s « : « *8 0 8 OSC B 07 Îl'J B R '5!’

RF loop antenna 13.56MHz 50ohm

Abstract: TX113-1C 433.92MHz loop antenna design TX113 RF Transmitter 315MHz ask 433.92 mhz oscillator 6pin MICRF113 rf transmitter receiver 315mhz circuit diagram us GRM1885C1H4R7JA01D rf transmitter circuit diagram USING ASK
Contextual Info: MICRF113 QwikRadio ASK Transmitter General Description The MICRF113 is a high performance, easy to use, single chip ASK Transmitter IC for remote wireless applications in the 300 to 450MHz frequency band. This transmitter IC is a true “data-in, antenna-out” monolithic device. MICRF113

Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

K10A50D

Abstract: K10A50 TK10A50D K*A50D
Contextual Info: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)

4320S

Abstract: one band compander circuit application DBX 2180 478 processor pinout datasheet antilog amplifier dbx noise reduction ota opamp audio compressor expander IC audio limiter analog JESD22-A113
Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

k10a60d

Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D
Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

K68A

Contextual Info: 1.0SMB SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – 1.0SMB SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability.

32A11

Contextual Info: SERIES SMA Serie SMA Series SMA Precision coaxial connector for microwave applications. The maximum fre­ quency is 24 GHz, recommended frequency range up to 18 GHz. SMA connectors satisfy high quality standards and are characterized by high reliability, high mechanical stability, long life, and optimum electrical prop­

k10a60d

Abstract: TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10
Contextual Info: K10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.58 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)

k13a

Abstract: oa1 transistor one band compander circuit application THAT4320S JESD22-A113-B K12A THAT4320 QSOP-28
Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

K10A60

Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200
Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

Contextual Info: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: Pre-trimmed Low-voltage Low-power Analog Engine Dynamics Processor IC THAT 4320 FEATURES APPLICATIONS • Pre-trimmed VCA & RMS detector • Companding noise reduction • Wide supply voltage range: 4.5V~16V • Wireless microphones • Low supply current: 3.7mA typ. 5V

k10a60d

Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

TTAE4320

Contextual Info: Pre-trimmed Low-voltage Low Power Dynamics Processor IC TTAE4320 Preliminary AP PLI CA TIONS FEA TURES • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wide supply voltage range: 4.5V~16V · Wireless microphones · Low supply current: 3.7mA typ. 5V

toshiba K10A50D

Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)

k10a60d

Abstract: K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500
Contextual Info: K10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.62 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)

K10A5

Abstract: K10A55D
Contextual Info: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs