K10A55D Search Results
K10A55D Price and Stock
Toshiba America Electronic Components TK10A55D(STA4,Q,M)MOSFET N-CH 550V 10A TO220SIS |
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TK10A55D(STA4,Q,M) | Tube | 1 |
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TK10A55D(STA4,Q,M) | Tube | 16 Weeks | 50 |
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K10A55D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK10A55D | |
K10A5
Abstract: K10A55D
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TK10A55D K10A5 K10A55D | |
Contextual Info: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK10A55D | |
Contextual Info: K10A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K10A55D スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.56 Ω (標準) : |Yfs| = 6.0 S (標準) 順方向伝達アドミタンスが高い。 2.7 ± 0.2 |
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TK10A55D | |
Contextual Info: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK10A55D |