K10A60D Search Results

K10A60D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k10a60d Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	tk10a60d k10a60d	PDF
k10a60d Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0S (typ.)	Original	tk10a60d k10a60d toshiba k10a60d transistor k10a60d +2k10a60 20/equivalent for k10a60d	PDF
k10a60d Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	tk10a60d k10a60d k10a60 equivalent for k10a60d +1toshiba k10a60d	PDF
k10a60d Abstract: TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10 Contextual Info: K10A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.58 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	tk10a60d sc-67 2-10u1b k10a60d +5k10a60 vdd400 equivalent for k10a60d k10a iar10	PDF
K10A60 Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200 Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	tk10a60d k10a60 k10a60d equivalent for k10a60d +6tk10a60d equivalent toshiba k10a60d tk10a60 transistor k10a60d k10a tc200	PDF
k10a60d Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	tk10a60d k10a60d	PDF
k10a60d Abstract: K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500 Contextual Info: K10A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.62 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	tk10a60d sc-67 2-10u1b 20070701-ja +5k10a60d k10a60 vdd400 equivalent for k10a60d mj500	PDF