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Toshiba America Electronic Components TK10A60D(STA4,Q,M) MOSFET N-CH 600V 10A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK10A60D(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK10A60D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TK10A60D		3,950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip Stock	TK10A60D		33,501			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	TK10A60D		30,001			1 - 10 - 100 - 1000 $0.38 10000 $0.38	Buy Now
Toshiba America Electronic Components TK10A60D(STA4.X.M)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	TK10A60D(STA4.X.M)		35,033			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	TK10A60D(STA4.X.M)		31,533			1 - 10 - 100 - 1000 $0.38 10000 $0.38	Buy Now
Toshiba America Electronic Components TK10A60D(Q) Trans MOSFET NCH 600V 10A 3Pin3Tab TO220SIS (Alt: TK10A60D(Q))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	TK10A60D(Q)			26 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

K10A60D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k10a60d Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TK10A60D k10a60d	PDF
k10a60d Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0S (typ.)	Original	TK10A60D k10a60d toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d	PDF
k10a60d Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TK10A60D k10a60d K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D	PDF
k10a60d Abstract: TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10 Contextual Info: K10A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.58 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	TK10A60D SC-67 2-10U1B k10a60d TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10	PDF
K10A60 Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200 Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TK10A60D K10A60 k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200	PDF
k10a60d Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TK10A60D k10a60d	PDF
k10a60d Abstract: K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500 Contextual Info: K10A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.62 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	TK10A60D SC-67 2-10U1B 20070701-JA k10a60d K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500	PDF