Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K10A60 Search Results

    SF Impression Pixel

    K10A60 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK10A60W,S4VX

    Power MOSFET, N Channel, 600 V, 9.7 A, 380 Milliohms, TO-220SIS, 3 Pins, Through Hole - Rail/Tube (Alt: TK10A60W,S4VX)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK10A60W,S4VX Tube 16 Weeks 1
    • 1 $1.43
    • 10 $1.28
    • 100 $1.25
    • 1000 $1.25
    • 10000 $1.25
    Buy Now
    Mouser Electronics TK10A60W,S4VX 79
    • 1 $3.66
    • 10 $1.86
    • 100 $1.67
    • 1000 $1.43
    • 10000 $1.43
    Buy Now
    Vyrian TK10A60W,S4VX 3,824
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Toshiba America Electronic Components TK10A60W5,S5VX

    - Rail/Tube (Alt: TK10A60W5,S5VX)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK10A60W5,S5VX Tube 16 Weeks 50
    • 1 -
    • 10 -
    • 100 $0.90
    • 1000 $0.86
    • 10000 $0.86
    Buy Now
    Mouser Electronics TK10A60W5,S5VX 252
    • 1 $2.70
    • 10 $1.34
    • 100 $1.29
    • 1000 $0.94
    • 10000 $0.94
    Buy Now

    Toshiba America Electronic Components TK10A60W,S4VX(M

    MOSFET, N-CH, 600V, 9.7A, TO-220SIS; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V RoHS Compliant: Yes
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TK10A60W,S4VX(M Bulk 1,569 1
    • 1 $2.18
    • 10 $1.85
    • 100 $1.49
    • 1000 $1.23
    • 10000 $0.97
    Buy Now
    TME () TK10A60W,S4VX(M 850
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.27
    • 10000 $1.27
    Get Quote
    TK10A60W,S4VX(M 1
    • 1 $5.70
    • 10 $5.00
    • 100 $4.07
    • 1000 $3.41
    • 10000 $3.41
    Get Quote

    Toshiba America Electronic Components TK10A60W5,S5VX(M

    MOSFET, N-CH, 600V, 9.7A, TO-220SIS; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TK10A60W5,S5VX(M Bulk 752 1
    • 1 $2.33
    • 10 $1.98
    • 100 $1.58
    • 1000 $1.32
    • 10000 $1.03
    Buy Now
    TME TK10A60W5,S5VX(M 766 1
    • 1 $2.63
    • 10 $1.30
    • 100 $1.30
    • 1000 $1.30
    • 10000 $1.30
    Buy Now
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TK10A60D 3,950
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Win Source Electronics TK10A60D 30,001
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.38
    • 10000 $0.38
    Buy Now

    K10A60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k10a60d

    Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D k10a60d PDF

    k10a60d

    Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d
    Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: |Yfs| = 6.0S (typ.)


    Original
    TK10A60D k10a60d toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d PDF

    k10a60d

    Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D
    Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D k10a60d K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D PDF

    k10a60d

    Abstract: TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10
    Contextual Info: K10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.58 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original
    TK10A60D SC-67 2-10U1B k10a60d TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10 PDF

    K10A60

    Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200
    Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D K10A60 k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200 PDF

    k10a60d

    Contextual Info: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D k10a60d PDF

    k10a60d

    Abstract: K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500
    Contextual Info: K10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.62 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original
    TK10A60D SC-67 2-10U1B 20070701-JA k10a60d K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500 PDF