2SD958 Search Results

Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) (1.0) (1.5) Rating Unit VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V VEBO

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit

Contextual Info: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planar type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO.

2SD958

Abstract: 2SB788
Contextual Info: Transistor 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB788 Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB788

Abstract: 2SD958
Contextual Info: Transistor 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD958 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) 4.1±0.2 2.0±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C 0.45±0.05 Parameter Symbol

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 • Features • High collector-emitter voltage (Base open) VCEO

Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current

Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 (1.0) 4.1±0.2 2.4±0.2 1.0±0.1 (0.85) 0.55±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

2SD921

Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
Contextual Info: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC2724

Abstract: 2SC3346 2SD4028 2SC2258 2SC400 2sc2636 2SD1111 4017 2SC3075 2SC3460
Contextual Info: - m ¡g T y p e No. 2SC 3999 it S' 2SC 4000 2SC 400 1 ^ 0 a 0 a 0a 2SC 4002 ^ = 2SC 4003 J ^ = n fâ T 2SC 4004 S H SANYO 2SC4218 & 2SC3751 U B H TOSHIBA NEC B HITACHI ±L s * ± a FUJITSU tä T MATSUSHITA h m M ITSUBISHI □ — A ROHM 2SC1473 2SC2551 2SC3672

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2SD945

Abstract: 2SD988 2SD924 2SD977 2SD972 2SD984 2SD988 equivalent 2SD925 2SD996 2SD902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 25W 2SD901 200 5 2A 150 100 10 400 (Tc=25ºC) 80W 2SD902 350

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components