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    2SD268 Search Results

    2SD268 Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD268
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 46.49KB 1
    2SD268
    Unknown The Japanese Transistor Manual 1981 Scan PDF 107.34KB 2
    2SD2686
    Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: Y; Package: PW-MINI; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: Low-Frequency Power Transistor; Application Scope: driver(Darlington output); Comments: Darlington; H_FE: (max 1.5 @I_C=1A, I_B=1mA) Original PDF 171.8KB 5
    2SD2687S
    ROHM Low frequency amplifier, storobo Original PDF 55.85KB 3
    2SD2687STP
    ROHM Low VCE (sat) Transistor; Package: SPT; Constitution materials list: Packing style: Ammo Box; Package quantity: 5000; Original PDF 75.08KB 3
    2SD2688LS
    Sanyo Semiconductor Horizontal Deflection Switching Transistors Original PDF 28.66KB 4
    2SD2689LS
    Sanyo Semiconductor Horizontal Deflection Switching Transistors Original PDF 31.51KB 4
    SF Impression Pixel

    2SD268 Price and Stock

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    ROHM Semiconductor 2SD2687STP

    Trans GP BJT NPN 12V 5A 3-Pin SPT T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SD2687STP 5,000 650
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    • 1000 $0.11
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    Quest Components 2SD2687STP 4,000
    • 1 $0.77
    • 10 $0.77
    • 100 $0.77
    • 1000 $0.23
    • 10000 $0.15
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    Toshiba America Electronic Components 2SD2686(TE12L,ZC)

    Trans Darlington NPN 70V 1A 1000mW 4-Pin(3+Tab) PW-Mini T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SD2686(TE12L,ZC) 1,000 311
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    • 1000 $0.24
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    Quest Components 2SD2686(TE12L,ZC) 800
    • 1 $0.75
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.30
    • 10000 $0.30
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    TME 2SD2686(TE12L,ZC) 1,000 264
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    • 10000 $0.18
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    EBV Elektronik 2SD2686(TE12L,ZC) 17 Weeks 12,000
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    2SD268 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Reliability Tests Report Product Name: 2SD2686 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


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    2sd2686 PDF

    2SD2687S

    Contextual Info: 2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S zDimensions Unit : mm zApplication Low frequency amplifier Storobo zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN)


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    2sd2687s250mv PDF

    2SD2687S

    Contextual Info: 2SD2687S Transistors Low frequency amplifier, storobo 2SD2687S zExternal dimensions Unit : mm zApplication Low frequency amplifier Storobo 2.0 (15Min.) 3Min. 3.0 4.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA 0.45


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    2sd2687s15min250mv PDF

    ic 4043

    Abstract: 2SD2688 2SD2688LS
    Contextual Info: Ordering number : ENN7526 2SD2688LS NPN Triple Diffused Planar Silicon Transistor 2SD2688LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    enn75262sd2688ls2079do-220fi+2ic 40432sd2688 PDF

    2SD2686

    Contextual Info: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base


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    2sd2686 PDF

    2SD2686

    Abstract: 2SD268 2sd26
    Contextual Info: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base


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    2sd26862sd2682sd26 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER  DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s


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    2sd26862sb2686g-x-ab3-rot-89qw-r208-050 PDF

    2sd2689

    Abstract: 2SD2689LS transistor 2sd2689ls IT030 TA-4042 IT03007 ENN7527
    Contextual Info: Ordering number : ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.


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    enn75272sd2689ls2079do-220fi+52sd2689transistor 2sd2689lsit030ta-4042it03007 PDF

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


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    2sd11602sd11402sd12242sd1508+162sd16312sd17842sd24812sb9072sd12222sd1412atransistorpower transistor npn to-220pnp power transistor to220transistor pnpdamper diodedarlington transistor2sd2206apower transistornpn darlingtontransistor to220 PDF

    2SD2687S

    Abstract: bjt npn
    Contextual Info: SPICE PARAMETER 2SD2687S by ROHM TR Div. * 2SD2687S NPN BJT model * Date: 2006/12/14 .MODEL 2SD2687S NPN + IS=3.0000E-12 + BF=463.17 + VAF=30.958 + IKF=7.4258 + ISE=3.0000E-12 + NE=2.1623 + BR=219.58 + VAR=100 + IKR=1.6647 + ISC=3.0000E-12 + NC=2.0433 + NK=.49844


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    2sd2687sq2sd2687s0000e-12000e-3+4594e-367e-1296e-12bjt npn PDF

    2SD2686

    Contextual Info: 2SD2686 東芝トランジスタ シリコンNPNエピタキシャル形 ダーリントン接続 2SD2686 ○ ソレノイドドライブ用 ○ モータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 0.5 A)


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    2sd2686sc-6220070701-ja PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER „ DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s


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    2sd26862sd2686l-ab3-r2sd2686g-ab3-rot-89+1qw-r208-050 PDF

    Contextual Info: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base


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    2sd2686sc-62 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


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    bce0016d2sc5200, 2sa19432sa1941 equivalent2sc5353 equivalent+72sc5198 equivalentamplifier circuit using 2sa1943 and 2sc52002sc2383 equivalenttpcp8l012sa1962 equivalent2sc4793 2sa18372sa1013 equivalent PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


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    bce0016ce-28831bce0016dsmd transistor h2a+9smd transistor h2a npntransistor smd h2a2sa1943 amplifier circuit diagramtpcp8l012sc5200, 2sa1943h2a transistor smd2sc5200 power amplifiers diagrammarking smd pnp transistor h2asmd h2a PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123 PDF

    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Contextual Info: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


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    2008-febsc-75aot-41650p5876e+10pioneer mosfet audio amp ic12v energy light circuit diagramvmn3 packagedtc143t datasheettransistor smd catalogequivalent transistors for umd2nsmd ya transistor2sd22112sa1576ub2sc6114 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    bce0016f2sa1941 amp circuit2sc33032sd880+7to3p package2sa114smd transistor h2a2sb834amplifier circuit using 2sa1943 and 2sc5200toshiba bipolar power transistoramplifier design tta1943 PDF

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


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    r0039a52p6215e2sc6144imd16a+8potential divider2sa1576ubdtd513zmp6t32scr5142sa1514k equivalent2scr5432sc6114 PDF

    2SD297

    Abstract: 2SD209 2SD291 2SD281 2Sd287 2SD299 2SD213 2SD300 2SD295 2SD226A
    Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SD201 90 6 6A 2SD202 110 6 6A 2SD203 130 6 6A 2SD204 60 5 700 2SD205 60 5 700 2SD206 50 8 10A 2SD206A 50 8 10A 2SD207 100 8 10A 2SD207A 100 8 10A 2SD208 150 8 10A 2SD208A 150


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    2sd2012sd2022sd2032sd204+162sd2052sd2062sd206a2sd2072sd207a2sd2082sd2972sd2092sd2912sd2812sd2872sd2992sd2132sd3002sd2952sd226a PDF

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


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    ttc003sc-64bcj0016fbcj0016e+92sc5200, 2sa1943tpcp8l01tpcp86022sc5200 2sa19432sc52002sc4793 2sa18372sc5200, 2sa1943, 2sc5198ttc13003l2sc3180n PDF