2SD268 Search Results
2SD268 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SD268 | Fuji-SVEA | Japanese 2S Transistor Cross Reference Datasheet | Scan | 46.49KB | 1 | ||
| 2SD268 | Unknown | The Japanese Transistor Manual 1981 | Scan | 107.34KB | 2 | ||
| 2SD2686 | Toshiba | Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: Y; Package: PW-MINI; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: Low-Frequency Power Transistor; Application Scope: driver(Darlington output); Comments: Darlington; H_FE: (max 1.5 @I_C=1A, I_B=1mA) | Original | 171.8KB | 5 | ||
| 2SD2687S | ROHM | Low frequency amplifier, storobo | Original | 55.85KB | 3 | ||
| 2SD2687STP | ROHM | Low VCE (sat) Transistor; Package: SPT; Constitution materials list: Packing style: Ammo Box; Package quantity: 5000; | Original | 75.08KB | 3 | ||
| 2SD2688LS | Sanyo Semiconductor | Horizontal Deflection Switching Transistors | Original | 28.66KB | 4 | ||
| 2SD2689LS | Sanyo Semiconductor | Horizontal Deflection Switching Transistors | Original | 31.51KB | 4 |
2SD268 Price and Stock
ROHM Semiconductor 2SD2687STPTrans GP BJT NPN 12V 5A 3-Pin SPT T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SD2687STP | 5,000 | 650 |
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2SD2687STP | 4,000 |
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Toshiba America Electronic Components 2SD2686(TE12L,ZC)Trans Darlington NPN 70V 1A 1000mW 4-Pin(3+Tab) PW-Mini T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SD2686(TE12L,ZC) | 1,000 | 311 |
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2SD2686(TE12L,ZC) | 800 |
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2SD2686(TE12L,ZC) | 1,000 | 264 |
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Buy Now | ||||||
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2SD2686(TE12L,ZC) | 17 Weeks | 12,000 |
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Get Quote | ||||||
2SD268 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Reliability Tests Report Product Name: 2SD2686 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s |
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2sd2686 | |
2SD2687SContextual Info: 2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S zDimensions Unit : mm zApplication Low frequency amplifier Storobo zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN) |
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2sd2687s250mv | |
2SD2687SContextual Info: 2SD2687S Transistors Low frequency amplifier, storobo 2SD2687S zExternal dimensions Unit : mm zApplication Low frequency amplifier Storobo 2.0 (15Min.) 3Min. 3.0 4.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA 0.45 |
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2sd2687s15min250mv | |
ic 4043
Abstract: 2SD2688 2SD2688LS
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enn75262sd2688ls2079do-220fi+2 | |
2SD2686Contextual Info: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base |
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2sd2686 | |
2SD2686
Abstract: 2SD268 2sd26
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2sd26862sd2682sd26 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s |
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2sd26862sb2686g-x-ab3-rot-89qw-r208-050 | |
2sd2689
Abstract: 2SD2689LS transistor 2sd2689ls IT030 TA-4042 IT03007 ENN7527
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enn75272sd2689ls2079do-220fi+5 | |
transistor
Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
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2sd11602sd11402sd12242sd1508+16 | |
2SD2687S
Abstract: bjt npn
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2sd2687sq2sd2687s0000e-12000e-3+4 | |
2SD2686Contextual Info: 2SD2686 東芝トランジスタ シリコンNPNエピタキシャル形 ダーリントン接続 2SD2686 ○ ソレノイドドライブ用 ○ モータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 0.5 A) |
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2sd2686sc-6220070701-ja | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s |
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2sd26862sd2686l-ab3-r2sd2686g-ab3-rot-89+1 | |
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Contextual Info: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base |
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2sd2686sc-62 | |
STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
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stvdst-01cat22stk411-230estk411-220e+8 | |
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
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scj0004rsc-432sc18152sc732tm+14 | |
2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
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bce0016d2sc5200, 2sa19432sa1941 equivalent2sc5353 equivalent+7 | |
smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
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bce0016ce-28831bce0016dsmd transistor h2a+9 | |
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
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2010/9sce0004ksc-432sc1815700the+10 | |
pioneer mosfet audio amp ic
Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
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2008-febsc-75aot-41650p5876e+10 | |
transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
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sc-432sc1815tps615tps616+11 | |
2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
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bce0016f2sa1941 amp circuit2sc33032sd880+7 | |
2SC6144
Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
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r0039a52p6215e2sc6144imd16a+8 | |
2SD297
Abstract: 2SD209 2SD291 2SD281 2Sd287 2SD299 2SD213 2SD300 2SD295 2SD226A
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2sd2012sd2022sd2032sd204+16 | |
2sC5200, 2SA1943
Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
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ttc003sc-64bcj0016fbcj0016e+9 | |