2SD201 Search Results

Contextual Info: 2SD2012 TO SHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P q = 25W (Tc = 25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in . High DC Current Gain : 100 Min. 1Q3IIAX . Low Saturation Voltage 0 3 .2 ± Q 2 /- W' : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)

2SD2015

Contextual Info: Product Specification www.jmnic.com 2SD2015 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON APPLICATIONS ・Driver for solenoid ・Relay and motor ・General purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol

2SD201

Abstract: 2SD201 0
Contextual Info: SavantIC Semiconductor Product Specification 2SD201 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING see Fig.2 PIN

2sb125

Abstract: relay 12v 3a datasheet 2SD2014 2SB1257 relay 12v 3a Solenoid Driver Darlington
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High DC Current Gain: hFE= 2000(Min)@IC= -3A ·Complement to Type 2SD2014 APPLICATIONS ·Driver for solenoid, relay and motor and general purpose

transistor 2sd2012

Abstract: 2sd2012
Contextual Info: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)

2SD2012

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)

Hitachi DSA002782

Abstract: 2sd2019
Contextual Info: 2SD2019 Silicon NPN Epitaxial ADE-208-919 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 15 kΩ (Typ) 0.5 kΩ (Typ) 1 2SD2019 Absolute Maximum Ratings (Ta = 25°C) Item

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Micro Commercial Components 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)

Contextual Info: SANKEN ELECTRIC CO LTD S5E D • 711074]. OOOlDlfl A 7 ci ISAKJ Silicon NPN Triple Diffused Planar 2SD2014 ☆ D a rlin g to n fi«*« T«np=Ta Application Example: »Outline Drawing 4- Electrical Characteristics Symbol 2SD2014 Unit VCBO 120 V VCEO 80 V V ebo

Contextual Info: SANKEN ELECTRIC SSE T> m 7 cJcJ07m 0001020 ll 57 CO L TD I SAKJ Silicon NPN Triple Diffused Planar ☆ D arlin gto n 2SD2016 • Outline Drawing 4 . .FM20 Application Example : General Purpose Electrical Characteristics Absolute Maximum Ratings

Contextual Info: SANKEN ELECTRIC CO LTD SSE D I • 7n0?m ISAKJ GGOIOSI 3b3 Silicon NPN Triple Diffused Planar ☆Darlington 2SD2017 A pplication Example: e Outline Driver for Solenoid, Relay and M otor, and General Purpose Drawing 4 . . F M 2 0 Electrical Characteristics

2SD1769

Abstract: 2SA1568 2SC4064 2SC5370
Contextual Info: Darlington Transistors V CBO V V CEO (V) 2SB1257 Type No. –60 –60 IC (A) PC (W) Complementary –4 (–6) 25 2SD2014 2SB1258 –100 –100 –6 (–10) 2SB1259 –120 –120 –10 (–15) –60 –60 –12 (–20) Package Remarks 2SD1785 FM20 (T0220F)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO-220F TRANSISTOR NPN 1. BASE FEATURES z Audio Frequency Power Amplifier Applications z High DC Current Gain z Low Saturation Voltage z High Power Dissipation

Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)

2SD2018

Abstract: sick nt
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2 • Features Parameter

2sd2012

Contextual Info: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor

2SD2014

Abstract: 2SB1257 FM20
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2SD2018

Contextual Info: Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 –0.1 • Features 3.2±0.2 Parameter Symbol Rating Collector-base voltage Emitter open VCBO Collector-emitter voltage (Base open) VCEO

2SB1333

Abstract: B1333 2SD2011
Contextual Info: h 7 > y ^ £ /Transistors 2 S B 1 333 2SB1333 #-u> h >mm Epitaxial Planar PNP Silicon Transistor (Darlington l& jp lM lli^ J iS 'tiffl/L o w Freq. Power Am p. V > h > f£ tx7 1) 2) hpE K r tj« 0 3) 'x — X • 1 5 •> 4) 2SD2011 t = l > 7 U 7 < f c £ o

transistor d2012

Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)