2SD203 Search Results

Contextual Info: HITACHI 2SD2030, 2SD2031 SILICON NPH EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER ^xxz jzxj t., u 2 Ct~ JEDEC TO-92 I ABSOLUTE MAXIMUM RATINGS (Ta iS ’C) 2SmOM> S ) niN ,í item 2.SD2IXM ¡ V<'Kt> ; im C ollet « x to ím jü c i voltaje VC)0 ¡« Em iitcf to bas« voìtìg«

2SD2033

Abstract: 2SB1353
Contextual Info: h -7 > '> Z $ / T ransistors 2SD2033 • ft* 2SD2033 X k°$* y NPN y U =1> h 7 > V * 2 Epitaxial Planar NPN Silicon Transistor 1£J§ j£li;fr*Slliffl/L o w Freq. Power Amp. • ^t-J firf'/iS /D im e n s io n s U n it: mm) 1) iWiKET $> -5 a B V CE O = 1 2 0

Contextual Info: 2SD2036 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)1.8’ Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Hitachi DSA002756

Contextual Info: 2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol 2SD2030 2SD2031 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage

25D20

Abstract: iran 2SD2030 2SD2031
Contextual Info: HITACHI 2SD2030, 2SD2031 SILICON NPN EPITAXIAL LOW FFIEQUE pV CY HIGH VOLTAGE AMPLIFIER ZX2 1. Kuiin«r . C tí-« t« c J Rj.5c 2 tJlr-wniirint jfi nii^} ( J E DEC TO-92 MAXIMUM COLLECTOR DISSIPATION CURVE ABSO LU T E MAXIMUM RATINGS (Ta 25°C) Symbol Item

2SB1353A

Abstract: B1353A 2sd2033a 2SB135 2SD2033
Contextual Info: h "7 > y 7. $ /Transistors 2SD2033A 2SD2033A Epitaxial Planar NPN Silicon Transistor l&JiiÄ^^jiÖ 'Üffl/Low Freq. Power Amp. • W fi ii@ /Dim ensions U n it: mm 1 ) iS S if } S T S 5 o BVc e o = 1 6 0 V 2) S O A ^ L ' o 3 ) fT * ' " « < , C o b fr'iS '-'o

2SD2035

Abstract: 2SD203
Contextual Info: h "7 > V 7s $ /Transistors 2SD2035 2SD2035 HMi£IS70U-^NPNvlj3>h7>v7$ Triple Diffused Planar NPN Silicon Transistor Freq. Power Amp. • i1-ffi\ti£0/Dimensions Unit : mm 1) V c E ls a t)*'” '- '» V C E (sat)= 0.3V (Typ.) (I c / I b = 3 A /0 .3 A )

2SD2033A

Abstract: L8150
Contextual Info: 2SD2033A Transistor, NPN Features Dimensions Units : mm • available in HRT package • high breakdown voltage: BV qjtq = 160 V • high transition frequency (fT) and low output capacitance (Cob) • wide safe operating area (SOA) 2SD2033A (HRT) 4.5±0.2

Contextual Info: 2SD2030,2SD2031 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier Outline TO-92 1 g I 1. Emitter 2. Collector 3. Base 3 2 •/ 1 985 2SD2030, 2SD2031 Absolute Maximum Ratings (T a = 25°C) Item Symbol 2SD2030 2SD2031 Unit Collector to base voltage

2SD297

Abstract: 2SD209 2SD291 2SD281 2Sd287 2SD299 2SD213 2SD300 2SD295 2SD226A
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SD201 90 6 6A 2SD202 110 6 6A 2SD203 130 6 6A 2SD204 60 5 700 2SD205 60 5 700 2SD206 50 8 10A 2SD206A 50 8 10A 2SD207 100 8 10A 2SD207A 100 8 10A 2SD208 150 8 10A 2SD208A 150

2SD2030

Abstract: 2SD2031 DSA003772
Contextual Info: 2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SD2030 2SD2031 Unit Collector to base voltage

d2038

Abstract: 2SD2038 transistor 2038 d 2038 k 2038 transistor
Contextual Info: 2SD2038 Transistor, NPN Features Dimensions Units : mm • available in HRT package • low collector saturation voltage, typically V CE(sat) = 0.3 V at Iq/I b = 3 A/0.3 A • excellent current-to-gain characteristics • large collector power dissipation:

2SD2033

Abstract: 2SB1353
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1353 DESCRIPTION •Good Linearity of hFE · Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Complement to Type 2SD2033 APPLICATIONS ·Designed for use in high voltage driver applications.

Contextual Info: 2SD2039 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.8’ Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k

2SD2030

Abstract: 2SD2031 npn "collector emitter base" DSA003638
Contextual Info: 2SD2030, 2SD2031 Silicon NPN Epitaxial ADE-208-1163 Z 1st. Edition Mar. 2001 Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SD2030

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SD2037

Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink