2SB135 Search Results

IC AVW

Abstract: 2SB1356 2sd2036
Contextual Info: 2SB1356 / T ransistors 2SB1356 I b P N P h Epitaxial Planar PNP Silicon Transistor fé ü >j£1t:£jiÍlíiffl/L o w Freq. Power Amp. • x tiiH /D im e n s io n s Unit : mm 1 ) V c E (sat) V c e (s a t)= — 0 .3 V (Typ.) (Ic /I b = - 4 A / —0.4A) ftTL'5„

2am TRANSISTOR

Abstract: transistor 2am 2SB1357
Contextual Info: 2SB1357 Transistor, PNP Features Dimensions Units : mm • • available in HRT package low collector saturation voltage, typically VCE(sat) = -0.5 V at lc/lB= -2AM).2A • wide safe operating area (SOA) Applications • power amplifier 2SB1357 (HRT) 8.0 * 0.2

2sb1353

Contextual Info: 2SB1353 Transistor, PNP Features Dimensions Units : mm • available in HRT package • high collector breakdow n voltage, B V q ^q — — 120 V • w ide safe operating area (SOA) • high transition frequency and small output capacitance 2SB1353 (HRT)

Contextual Info: 2SB1352 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2k h(FE) Max. Current gain.

2SB1359

Abstract: 2sd2039
Contextual Info: h "7 > y X $ / J ransistors 2SB1359 2SB1359 PNP v U =l> h 7 > y * $ I ?-v> h>mm Epitaxial Planar PNP Silicon Transistor (Darlington) ffiJ§>j£1i:fri£lll! ffl/L o w Freq. Power Amp. ^•ffi^ ä O /D im e n s io n s (U n it: mm) ? - ‘j > D hFE * '' ^ o

2SB1351

Abstract: FM20 2SB135
Contextual Info: 2 k Ω (1 0 0Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A

Contextual Info: 2 k Ω (1 0 0Ω) E 2SB1352 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 60(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A

Contextual Info: ISAKJ 7110741 0000137 T71 55E Silicon PNP Epitaxial Planar SANKEN ELECTRIC CO LTD ☆ Darlington 2SB1352 • Outline Drawing 5 . . F M 1 0 0 Application Example: Driver for Printer Head, Solenoid, Relay and M otor, and General Purpose Electrical Characteristics

2sb1353

Abstract: 2SB1353A 2SD2033
Contextual Info: 2SB1353 h "7 > y X £ / T ransistors 9 C R 1 3 5 3 • W W W x t f T \f- f l s - i - f ó PN Py ' J - 1> h - 7 > v ^ ^ Epitaxial Planar PNP Silicon Transistor f f i ü > Â f |* iS lliffl/L o w Freq. Power Amp. Íiffí^ t;±0/D ¡m en sio n s Unit : mm) 1) S H E E T S ' & ( B V c E O = - i 2 0 V ) o

B1353A

Abstract: B1353 2SD2033A 2SB1353A 2SD2033
Contextual Info: h ~7 > V X $ / T ransistors 2SB1353A O C D 4 3 B 3 A i^^'>^U7V-^PNPvU=i>h7>y^^ w ^ w # % Epitaxial Planar PNP Silicon Transistor fê£3}J&fi:frit,lï# i/L o w Freq. Power Amp. • ^ fl^ S iE l/D im e n s io n s Unit : mm • # * 1) ii|ffiJ E ? '£ > -S (B V c e o = - 1 6 0 V ) „

2SB1351

Abstract: FM20 DSA0016505
Contextual Info: 2 k Ω (1 0 0Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A

2sd2037

Abstract: 2SB1357 2sd2037 transistor
Contextual Info: h 7 > y ^ í í / T ransistors 2SB1357 2SB1357 T V j\s —rfó X PNP '> U =i > E p itaxial P la n a r P N P S ilico n Transistor f é J i j & ^ ^ i i ' i i f f l / L o w F re q . P o w er A m p . • fis vtiiE]/D im ensions Unit : mm) 1) V c e (satl^'ffi'-'o

2SB1358

Contextual Info: 2SB1358 h 7 > y Z 5 l / T ransistors 2SB1358 X tr £ # v 7 ^ 7 ° 1 / - ^ PNP v U =l > h 7 > v * £ Epitaxial Planar PNP Silicon Transistor f ö ü ilS S ^ ii'liff l/L o w Freq. Power Amp. • « ft 1 VcE sat) V c e (sat)= — 0.3V (Typ). h -7 > V ( I C / lB = - 3 A / - 0 . 3 A )

2SD2033

Abstract: 2SB1353
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1353 DESCRIPTION •Good Linearity of hFE · Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Complement to Type 2SD2033 APPLICATIONS ·Designed for use in high voltage driver applications.

Contextual Info: 2SB1355 Transistor, PNP Features Dimensions U n its : mm • • • • available in HRT package excellent current-to-gain characteristics low collector saturation voltage, typically VCE(sat) =-0.5 V at lc/lB = -3A /-0.3A 2SB1355 (HRT) 8.0±0.2 4.5±0.2

Contextual Info: SANKEN ELECTRIC CO LTD SSE » • 7 ^ 0 7 4 1 D00CH3b 035 « S A K J Silicon PNP Epitaxial Planar ☆ D a rlin g to n 2SB1351 • O u tlin e D ra w in g 4 . .F M 2 0 A p p lic a t io n E x a m p le : D riv e r fo r Prin te r H e a d , S o le n o id ,

2sb1355

Abstract: cub vc 150 2sd2035
Contextual Info: h 7 > y ^ ^ /Transistors 2SB1355 x k° 7 i y a[y—r m PNP > U =3> K Epitaxial Planar PNP Silicon Transistor fëü)j£11:ftiSlfiffl/Low Freq. Power Amp. 2 S B 1 3 5 5 • ÿ+Jfi vfüEI/Dimensions Unit : mm) 1) VCE (sat)¿'‘'f i t 'o Vce (sat)= —0.5V (Typ.)

2SB1353

Contextual Info: 2SB1353 Transistor, PNP Features Dimensions Units : mm • available in HRT package • high collector breakdown voltage, 2SB1353 (HRT) 4.5 ±0.2 8.0 ±0.2 B V c e o = —120 V • wide safe operating area (SOA) • high transition frequency and small output capacitance

Contextual Info: 2SB1357 Transistor, PNP Features Dimensions Units : mm • available in HRT package • low collector saturation voltage, typically VCE(sat) = -0.5 V at lc /lB = - 2 A/-0 .2 A • 2SB1357 (HRT) 8.0 ±0.2 4.5 ±0.2 wide safe operating area (SOA) Applications

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1385

Abstract: 2SB1256 2SB892 2SA1020 2SB1015 2SA1266 2SA1770 2SB1441 25B1142 2sb111
Contextual Info: m « Type No. 2SB 1426 , 2SB 1427 2SB 1428 — 2SB 1429 2SB 1430 2SB 1431 2SB 1432 ^ 2SB 1433 2SB 1434 2SB 1435 2SB 1436 2SB 1437 2SB 1438 2SB 1439 2SB 1440 2SB 1441 2SB 1442 2SB 1443 2SB 1444 2SB 1445 2SB 1446 2SB 1447 2SB 1448 2SB 1449 2SB 1450 2SB 1451

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

RGK 20/1

Abstract: sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN 2SC3909 Sanken Schottky Diode Mi 15 2SA1494 SANKEN bridge rectifier ic
Contextual Info: DISCRETE DEVICES AMS-174 INTERIM ISSUE Subject to change without notice May 9, 1997 DISCRETE TRANSISTORS, DIODES, and ARRAYS Index to Sanken Electronic Components . page 2 NPN Power Transistors . 4

Contextual Info: 2SB1335 2SD1855 Transistors I Power Transistor 60V, —4A 2SB1335 •F e a tu re s •A b s o lu te maximum ratings (Ta—2S'C) 1) L o w VcE(sat). (T y p .— 0 .5 V a t Ic/I b = — 3 / - 0 . 3 A ) Parameter Collector-base voltage C ollector-em itter voltage