2SB1335 Search Results

2SB1335

Abstract: 2sd1855
Contextual Info: Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1855 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING

2SB1335

Abstract: 2SD1855
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1335 DESCRIPTION •High Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1855

Contextual Info: 2SB1335 2SD1855 Transistors I Power Transistor 60V, —4A 2SB1335 •F e a tu re s •A b s o lu te maximum ratings (Ta—2S'C) 1) L o w VcE(sat). (T y p .— 0 .5 V a t Ic/I b = — 3 / - 0 . 3 A ) Parameter Collector-base voltage C ollector-em itter voltage

Contextual Info: Transistors 2SB1335 2SD1855 94L-356-B14 (94L-878-D14) 279

2SB1335A

Contextual Info: h "7 O 2SB1335A /Transistors C R 4 3 3 5 A W w w # ^ * £ * * ' > 7 ^ : / V - : ^ P N P y ÿ i i > h 7 > y 2 * Epitaxial Planar PNP Silicon Transistor Fraq. Power Amp. > i /Dim ensions Unit : mm • ttft 1 ) VcE (sat) A'*j6 l ' 0 _ io .n l“ ; VcE (s a t)= —0.5V (Typ.)

2SD1855

Abstract: 2SB1335
Contextual Info: SavantIC Semiconductor Product Specification 2SD1855 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB1335 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

2SB1335

Abstract: 2sd1855
Contextual Info: SavantIC Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1855 ·Low collector saturation voltage · APPLICATIONS ·For low frequency power amplifier applications PINNING

2SB1335A

Abstract: 2SB1333 2SB1365 2SD2021 2SB1320A 2SB1353 2sb1355 2SB1335 2SB1342 2sb1357
Contextual Info: - 86 - Ta=250C, *EPÍÍTc=25T; m 2SB1320A 2SB1321A 2SB1322A 2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1334A î± % fôT fòT & T H# Hi* H # a—A a —A D— A a —A ¿0 010 03 D— A 2SB1335A 2SB1339 2SB1340 2SB1341 2SB1342 2SB1343 2SB1344 2SB1346

Contextual Info: 2SB1335 2SD1855 Transistors I 60V, —4 A Power Transistor 2SB1335 •F e a tu re s 1) 2} 3) 4) •A b s o lu te maximum ratings ( T a = 2 5 t ) Low Vce<sat}. (T yp .— 0.5V a t Ic/I b = —3 /—0.3A) Excellent DC curre nt gain characteristics. W ide SO A (safe operating area).

2SB1335

Abstract: 251C 2SB1355 2SB1395 2SD1655 2SD1855 2sb133
Contextual Info: 2SB1335 2SD1855 Transistors Power Transistor I 60V, - 4 A 2SB1335 •F e a tu re s 1) Low VcE(s.t). (T yp.— 0.5 V at Ic/I b= - 3 / - 0 . 3 A ) 2) Excellent DC current gain characteristics. 3} W ide SO A (safe operating area). 4} Com plem ents the 2S D 1855.

2SB133

Contextual Info: ROHM CO MOE LTD TASÓTE D ODGSbST I RHM S 2SB1335 h V > y X $ //Transistors 7=33-^ 9 2SB133; X fcf £ *r V 7 ¡ V f b - i~ M PNP y V □ > h ÿ > y X $ MJMÌ&WJjiMtymffì/Low Freq. Power Amp, Epitaxial Planar PNP Silicon Transistor 1 VcE sat) VcE(sat)=-0.5V (Typ.) Ic /I b = —

2SB1335A

Contextual Info: 2 S B 1 3 3 5 A Transistor, PNP Features Dimensions Units : mm • available in TO -220 FP (SC -67) package • low co lle ctor saturation voltage, typically V CE(sat) = -0 .5 V at \çl\B = -3 A /-0 .3 A 2SB1335A (TO-220 FP) 10 .0 1 7.0 • excellent current-to-gain

2SB1335

Contextual Info: 2SB1335 N -7 > V 7, £ / I ransistors 2SB1335 xt° 2 * v - i ~ M PNP v ' J 3 > h 7 > y ^ $ 1£Ji}J&1S:fai§,iiffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor Unit: mm V f ^ V i V ^ J 'T • it-/D im ensions 1) VcE(sat) fr'fi'-'o VcE(sat)= — 0.5 V (T y p .) Ic / I b = ~

2SD1855

Abstract: 2SB1335
Contextual Info: 2SB1335 h ~p > '> 7, £ /Transistors 2SB1335 X fcf2 \ s - ~ m PNP V V =l > K -7 > V X $ Epitaxial Planar PNP Silicon Transistor 1£ >jÿ®^jliÎiffl/Low Freq. Power Amp. • • ÿt-JfÎTfü®/Dim ensions Unit: mm 1) VcE(sat) 7 0 + O,3 +1 (Ic /Ib = - 3 A / - 0 . 3 A )

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SD2037

Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products

2SB1335A

Abstract: 2SD1855A transistor D 882 p
Contextual Info: 2SD1855A /Transistors 2SD 1855A H M ÍÉ t& 7 0U P N v V = ¡ > Triple Diffused Planar NPN Silicon Transistor Freq. Power Amp. • M 3 * - : ^ N Ü E I/D im ensio ns Unit : mm 1) V c E (s a t)* > 'm 'o V c E ( s a t) = 0 .4 V ( T y p .) fi.o * “ ; (lc /lB = 3 A /0 .3 A )

B1335A

Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Contextual Info: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SA1441

Abstract: 2sA1441 nec 2SA1115 2SA1263 2SA1232 2SA1142 2SA1310 2SA1018 2SA1624 2SB1197K
Contextual Info: 32 - tt 2 SA 1465 0 a 2SA 1466 B 2SA 1467 i ED M £ T y p e No. m 146 8 € Manuf. H » S ANYO 2SB698 2SA 2 SA 2SA 1471 1 474 1 47 5 1 47 6 = •;# ^ ^ = n ^ = # ft 2SA 1477 = 3 2SA 1478 = ;¥ H. ft 2SA 1479 2SA 1480 - ✓ J 2SA 1481 2SA 1482 2SA 1485 2 SA 1487

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *