2SB133 Search Results

2SB1335

Abstract: 2sd1855
Contextual Info: Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1855 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING

2SB1334

Abstract: 2SD1778 3CU500 1e0a
Contextual Info: h 7 'y sy /T ra n s is to rs 2SB1334 - 7 = 3 3 - / 9 fl ^ a j f c ^ ^ i a t S ^ / L o w F re q . P o w e r A m p . Epitaxial Planar P N P Silicon Transistor

2SD1888

Abstract: 2SB1339
Contextual Info: SavantIC Semiconductor Product Specification 2SD1888 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·Complement to type 2SB1339 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION

2SB1334

Abstract: 2SD1778
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1334 DESCRIPTION •High Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1778

2SB1335

Abstract: 2SD1855
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1335 DESCRIPTION •High Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1855

Contextual Info: 2SB1335 2SD1855 Transistors I Power Transistor 60V, —4A 2SB1335 •F e a tu re s •A b s o lu te maximum ratings (Ta—2S'C) 1) L o w VcE(sat). (T y p .— 0 .5 V a t Ic/I b = — 3 / - 0 . 3 A ) Parameter Collector-base voltage C ollector-em itter voltage

Contextual Info: Transistors 2SB1335 2SD1855 94L-356-B14 (94L-878-D14) 279

2SB1333

Abstract: B1333 2SD2011
Contextual Info: h 7 > y ^ £ /Transistors 2 S B 1 333 2SB1333 #-u> h >mm Epitaxial Planar PNP Silicon Transistor (Darlington l& jp lM lli^ J iS 'tiffl/L o w Freq. Power Am p. V > h > f£ tx7 1) 2) hpE K r tj« 0 3) 'x — X • 1 5 •> 4) 2SD2011 t = l > 7 U 7 < f c £ o

2SB1330

Abstract: 2SD2006 2sb transistor mrt package transistor 2SB
Contextual Info: 2SB1330 Transistor, PNP Features Dimensions Units : mm • available in MRT package • high breakdown voltage and current capacity VCE0 = -80 V, lc = -0.7 A • complementary pair with 2SD2006 2SB1330 (MRT) 6.5 ± 0.2 Applications • 3.4 ±0.2 1.0 medium power amplifier and

2sd1888

Abstract: 2SB1339 2sb133
Contextual Info: Inchange Semiconductor Product Specification 2SD1888 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・Complement to type 2SB1339 ・High DC current gain APPLICATIONS ・Low frequency power amplification PINNING PIN DESCRIPTION

2SB1334A

Contextual Info: SavantIC Semiconductor Product Specification 2SB1334A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SB596

Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T

2SB1331

Abstract: 2SD2007
Contextual Info: h 7 > y 7,2 /Transistors 2SB1331 2SB1331 X t i 2 * y t JU7 ° \ s - j - f ó PNP V V = i> h 7 > y 7 2 Epitaxial Planar PNP Silicon Transistor Cf3t i : f r * i lflïffl/M e d iu m Power Amp. íl-Jfí'+íiH /D im ensions Unit : mm 1) lc p = —3A, P c = 1 .2 W (D *h H * o

2SB1339

Contextual Info: h "7 > y 7k$ / T 2SB1339 ransistors 2SB1339 & - 'j> h> w m Epitaxial Planar PNP Silicon Transistor Darlington 1£JH )& £2ji84iffl/L o w Freq. Power Amp. 1ÿ t-ïïi'+ ü /Dim ensions (Unit : mm) 1) ? - • ; > h > * £ < * ? hFE t f ’S L 'o 2) K r tjffio

2SD2005

Abstract: 2SD2004 2SB1482 2SB1328 2SD2010
Contextual Info: Bipolar transistors-2SA series MRT summary Table 6 MRT general use transistors *c V (A) (A) Pc (W) (T. = 2 5 X ) 2SB1329 -3 2 -1 -2 1.2 2SB1330 -8 0 -0 .7 2SB1328 -1 6 0 -1 .5 2SB1517 -5 0 2SD2005 V CEO Application Part no. (max) * V CES h FE h FE ranking

2SD1929

Abstract: 2SD2172 2sd1930 2SB1425 2SA1780 2SB1041 2SD2159 2SA1482 2SB1256 2SD2007
Contextual Info: ¡TÏÏTÏÏÏ1 T r an s i s t o r s • TO-92L, MRT Types Type Function It: u 1. A -32 1 -2 0.75 1.2 82 - 390 Ver ( V ) -3 -80 0.7 . 0.75 1.2 82 - 390 -3 -100 -32 2 -3 -80 -1 2SB1329 2SA935 2SB1330 2SB1010 2SB1331 2SB1041 2SB1332 -50 -1 -1 5 2SB1043 2SB1212

2SB1333

Contextual Info: 2SB1333 Transistor, PNP Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • • damper diode is incorporated built in resistors between base and emitter complementary pair with 2SD2011

2SD1855

Abstract: 2SB1335
Contextual Info: SavantIC Semiconductor Product Specification 2SD1855 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB1335 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

Contextual Info: 2SB1331R Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2sd2011

Abstract: 2SB1333 transistor 2SD 2sd darlington
Contextual Info: 2SD2011 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • damper diode incorporated • built-in resistors between base and emitter • complementary pair with 2SB1333

Contextual Info: I ' 7 > y 7 $ /Transistors 2SB1334 2SB1334 X f c T * * V T \sZf\s—rf& PNP v v =3 > h 7 > y X $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • ft* 1 1) VcE sat) /Dim ensions (Unit: mm) 'o V cE(sat)= -0.3 V (Typ.) ¿ 3 . 6 + 0.2 10.0 ±0.3 h

2SB1335

Abstract: 2sd1855
Contextual Info: SavantIC Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1855 ·Low collector saturation voltage · APPLICATIONS ·For low frequency power amplifier applications PINNING

2SB1339

Contextual Info: SavantIC Semiconductor Product Specification 2SB1339 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications

Nec K 872

Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
Contextual Info: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634