IRAN Search Results

mg75n2ys

Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
Contextual Info: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.

Contextual Info: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3425 INDUSTRIAL APPLICATIONS Unit in iran SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. JZ < 3 .1 ± 0 .1 HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES: . Excellent Switching Times : tr= l .0«s Max. , tf=l.5iis(Max.) at 1^=0.5A

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 TV TUNER, UHF MIXER APPLICATIONS. Unit in iran VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ± 0.1 1. 25 ± 0 . 1 oe +i 3- 2 -Efl MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 30

Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 464 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features Wesentliche Merkmale • Strahlung im sichtbaren Rotbereich ohne IRAnteil

Contextual Info: Customer Information Sheet DRAWING N o . : M83-LML3MIN 19-0 THI RD ANGL E P R O J EC T I O N A L L DI ME NS I ONS IN Iran T SPECIFICATIONS: MA T E R I A L : MOULDING = G L A S S - F I L L E D PP S, U L 9 4 V - 0 , JACKSCREW i S T A I N L E S S S T E E L S I G N A L CONTACT = PHOSPHOR BRONZE

Contextual Info: U ltra S table OCXOs Series 5000 FEATURES • Low aging rate day year to 1 X10,n to 1x106 • Excellent temperature ± 3 x 1 0 3 stability 0 to 60°C • Frequency range 4 to 20 MHz - m — Iranlie/ 1/ -I 4— ^ Pin out 50 A Note: Dimensions in mm SPECIFICATIONS

178 15T

Abstract: DS442 RC500 FT 3528 9139ki
Contextual Info: toeo -T» X <¥ MA Ï I X X ' J - • /« .- t. P = 30Q*nW m u . • « - f a v e c = a 0pF m u . « a n * Vr —4 Oqs ma*« « w e x r * Absolute M inim um Ratine» / T . «=25T Vwi «*Œ v» U M 1C Im r iç « iW k> Iran P *«4* Ti -3 5 -3 0 350 120 MO

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon Power lan iransistors High Voltage Video Output Transistor D40N The D40N is a silicone plastic encapsulated power transistor for TV video

IR10M

Abstract: 1SV103 2l k
Contextual Info: b7 TOSHIBA {DI SCR ET E/O PTO } 9097250 TOSHIBA DFI^aiTasD DomatH 3 ^ | ~ 67C 09 36 4 CDIS C R E T E / O P T O Silicon Epitaxial Planar Type - 1SV103 Variable Capacitance Diode Unit in iran FM RADIO BAND TUNING APPLICATIONS. 4 .3 M AX. FEATURES : - . Low Series Resistance : rs=0.35Q Typ.)

MMBD7000

Contextual Info: MMBD7000 IRANSYS mCTRONICS c LIMITED DUAL SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H Case: SOT-23, Molded Plastic

2SD873

Abstract: AC73 if03s
Contextual Info: TOSHIBA St. {DISCRETE/OPTO} 9097250 TOSHIBA D E _| ciOci7E S D 0 D D 7 ñ 3 t, fl <DIS C R E T E/ OP TO SILICON NPN TRIPLE DIFFUSED TYPE_ ¿ INDUSTRIAL APPLICATIONS. Unit in iran HIGH POWER AMPLIFIER APPLICATIONS. HIGH.POWER SWITCHING APPLICATIONS.

1N4448W

Abstract: 25VTJ
Contextual Info: e IRANSYS 1N4448W LIMITED FAST SWITCHING SURFACE MOUNT DIODE aiCTRomcs Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance HEh Mechanical Data_

TIP11

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: IRAN SYS TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS m C TR O M C S LIMITED T0-220 PACKAGE TOP VIEW • Designed for Complementary Use with TIP110, TIP111 and TIP112 B C • 50 W at 25°C Case Temperature C C • 4 A Continuous Collector Current

2SB996

Abstract: 2SD1356 300X300X8
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA '• DE J T □=!7 S S 0 □ □ □ 7 ci54 S | ~ 5òC '0 7 9 Z* <D I S CR ET E/O PT O SILICON NPN T R IP LE 'D IFFU SE D TVPË; r t.u -r-> ? 1 ; POWER AMPL-IFIER .APPLICATIONS. Unit in Iran m g FEATURES i V •»„

2SK789

Abstract: JR121
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH 2SK789 HIGH SPEED, HIGH CURRENT S WIT CHI NG APPLICATIONS. INDUSTRIAL A PPL ICA TIO NS C HOPPER REGULATOR, DC-DC CONVE RTE R AND MO TOR U n i t in iran DRIVE APPLICATIONS. 1 5-9MAX. • Low Drain-Source ON Resistance

Contextual Info: Corresponding to Surface M ounting , and a thin type • Small demensions and thin 1. Irani thick •Reflow soldering is applicable. • Leadless type in a ceramic package • Automatic mounting is possible, using embossed taping. SX-6B, SX-6A Item Frequency

KD724502

Abstract: KD221404 KD421K15 KD524505 KD421215 kd7245 KD221K75 kd2245 KD721KA1 KD321408
Contextual Info: P 0 üJER EX INC TÏ Hower iransisiors & D Ë l 75=14^21 0 0 0 1 0 5 1 T uanmgion Modules Dual Darlington Transistor Modules Diode le Amps VcBO (SUS)* (Volts) V lS O L (Vrms) If (Amps) I fsm (Amps) Vfu @ If (Volts) (fisec) liFE @ le Recs °C/W 2.5 ton Package

SFH 462

Abstract: 462-L sfh462 7080C
Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter SFH 462 Wesentliche Merkmale Features • Strahlung im sichtbaren Rotbereich ohne IRAnteil • Kathode galvanisch mit dem Gehäuseboden verbunden • S e h r hoher W irkungsgrad • Hohe Zuverlässigkeit

valvo

Abstract: valvo b8 320 valvo transistoren NTC Valvo ac128 valvo ntc AC127 AC 128 C3320 ScansUX7
Contextual Info: NICHT FÜR N E U E N T W IC K L U N G E N TRANSISTORSATZ Unter der Typenbezeichnung 40 809 wird ein kompletter Transistorsatz für gle i chst romgekoppe1te Iransformatorlose K omplementär-Endstufen ge liefert. Der Transistorsatz besteht aus AC 127 Vorstufe

386SL

Abstract: E0000 LH28F008SA LH28F008SAT-85 LHF08S49
Contextual Info: P l« m T S M < 1 1 1 C W i\S liuca;io.l Iranf- Croup LH28FD08SAJ-85 8M Rash Memory (Model No.: LHF08S49 Spec No.: EL105017 Issue Date: August 31, 1998 SHARP LHF08S49 • H a n d le this document carefully for it contains material protected by international

electromatic system 128

Abstract: dupline 128 FAD 1213 dupline 128 ffd 1440 dupline d 1550 ffd 1550 fpd 1901 carlo gavazzi dupline transmitter ffd 1220 dupline 8 channel receiver 1501 700 Gavazzi ffd
Contextual Info: I •ill ■■■■I m ■ DUPUNE 128 Iwo-wire transmission system for remote control The Dupline system oOorffimnntir. afiflctoonic DUPLINE RECEIVER DUPLINE 128 CHANNEL GENERATOR D7~8 DUPLINE 128 IRANSMITTER fcHANNEL CODE CHANNEL COC CHANNELCODE RELAY RELAY

BAL99

Contextual Info: BAL99 IRANSYS mCTRONICS LIMITED e SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 Max 0.37 0.51 Ì u Case: SOT-23, Molded Plastic

543T

Contextual Info: QSFCT543T, 544T, 2543T, 2544T High Speed CMOS 8-Bit Bus Interface L f lt r h T r a n ^ p p iv p r ^ Laicn iransceivers Ô a g e is m QS54/74FCT2543T qs54/74fct2544t FEATURES/BENEFITS • Pin and function compatible to the 74F543/544 74FCT543/544 and 74FCT543T/544T