2N3263
Abstract: 2N3265 2N3266 jp6c 2n3264
Contextual Info: TYPES 2N3263. 2N3264. 2N326S. 2N3266 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED SWITCHING APPLICATIONS 30 Œ H • mc < Min fT = 20 MHz s P * *mechanical data U 2 N 3263, 2N 3 2 6 4 VI Z u T H E CO LLE C TO R IS IN E L E C T R IC A L C O N T A C T W IT H T H E CASE
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2n32632n32642n326s2n3266+22n3265jp6c
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RCA 40636 transistor
Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.
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ito-391-ito-220o-661ito-2201+13o-2201ito-31130x130rca 40636 transistorrca 40636rca 2n3771 power circuit40636 rcarca 40327300w transistor audio amplifier40636220v 300w ac regulator circuit2n3055 rca40327
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2N6178
Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053
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ito-391pt-85-11780-12sw30x30+1242x42103x1032n61782n61802n6181b0244cnpn darlington 400v 15a2n21022n38792n40362n53202n5322
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BOX70
Abstract: 71T2 PT7933 B0221 ESM3000 SS2022 b0220 74T2 Solitron
Contextual Info: POWER SILICON NPN Item Number Part Number Manufacturer Ic Max A (V) fT hFE V(BR)CEO Min Max (Hz) ICBO Max (A) t, Max tf Max (8) (8) PD Max (W) Toper Max (Oe) Package Style Additional Transistors, (Co nt' d) 5 10 B0221 B0221 B0221 2N1644 HSE912 ST403 B0795
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b02212n1644hse912st403+10b0795ss2005box7071t2pt7933esm3000ss2022b022074t2solitron
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TIC 115
Abstract: BD117 to-53 HSE2000 ss2017 2N396 tic 115 d bd112
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) Max (W) hFE Min *T (Hz) Max k>N Max (A) (8) ICBO r (CE)sa« 'Oper Max (Ohms) Max <°C) Package Style D vices 20 Watts or Mor . . . .5 . . . -10 . . .15 20 -25 -30
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2n39592n3960trf641trf646+14trf648trf453trf453atrf455trf455atrf454tic 115bd117to-53hse2000ss20172n396tic 115 dbd112
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2N3055
Abstract: 40327 40412 BDY71 2N1482 2N3054 2N344 2N5298 2N5786 2N6478
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.
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ito-391-ito-220o-661ito-2201+13o-2201ito-31130x1302n30554032740412bdy712n14822n30542n3442n52982n57862n6478
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2N6178
Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053
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ito-391pt-85-11780-12sw30x30+1242x42103x1032n61782n20162n3283transistor 2n60992n6180rca 402502n6474 jan2n55782n61772n2102
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2N4004
Abstract: 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127
Contextual Info: Case Outlines TO-61 2-67 max TO-63 TO-111 4 25 Metal Can Power \ High Reliability Professional Types continued Device Type 2N3789 2N3713 2N3715 2N3791 TIP5433 2N5940 2N3790 2N3792 2N5939 2N6127 2N6128 2N3714 2N3716 2N4301 TIP562 TIP563 TIP663 TIP664 TIP665
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o-111tc-262n37892n3713+152n371s2n3791tip54332ns9402n37902n40042n35512n19362n40052n326stip665tip540tip6642n61282n6127
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2N3055 power amplifier circuit
Abstract: 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386
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2n62922n61112n54952n6269+142n40362n6386ta82012n21022n3055 power amplifier circuit4063640363300w transistor audio amplifier200w silicon audio power transistor200w transistor audio amplifier408722n34392n406340412
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2N6180
Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037
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ito-391pt-85-11780-12sw30x30+1042x42103x1032n61802n32832n21022n38792n40362n53202n53222n6178
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40636
Abstract: 2N3265 40321 40327 40363 150w class ab audio amplifier 40346 2N3055 2n3055 audio 200W AUDIO AMP
Contextual Info: 2N3055 F A M ILY [n-p-n] silicon f f = 0.8 MHz min; Py up to 150 W max 1 15-W Hom etaxial-Base, General Purpose 1 15-W Hom etaxial-Base, General Purpose 150-W Hom etaxial-Base, General Purpose 4 0-V , 1 17-W Hom etaxial-Base 45 60 80 40 55 70 85 45 _ 70
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2n30552n62532n62542n6371+102n3440406362n3265403214032740363150w class ab audio amplifier403462n3055 audio200w audio amp
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rca 2n3055
Abstract: rca 40327 RCA 2N3055 transistor 2n3055 audio amplifier application note 2n3055 application note RCA 40636 transistor 40327 rca 2N3439 RCA 2N3055 transistor RCA 528
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . . f r t o 2 0 M H z . . . P y t o 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]
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tq-6642x42130x1302n6177+152n34392n54152n358s2n62132n6079rca 2n3055rca 40327rca 2n3055 transistor2n3055 audio amplifier application note2n3055 application noterca 40636 transistor40327 rca2n3439 rca2n3055transistor rca 528
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RCA 40409
Abstract: rca1a18
Contextual Info: High-Speed-Switching n-p-n and p-n-p Type Selection Charts h V CEO sus V CER <sus) V V C E V F E * » at V (sus) = 10 V Current—mA V V C E ICBO - M A Temp.-°C 0.01 10 50 V 150 1000 500 2N2102 FAMILY (n-p-n) General Purpose, Complementary to 2N4036 Family
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2n21022n4036o-39/to-205md2n697+82n16132n17112n30532n22702n6992n3053arca 40409rca1a18
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RCA 40250
Abstract: 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax. (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 ic ■ 2 A m ax.
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ito-391pt-85-11780-12sw30x30+1242x42103x103rca 402508350a8203btransistors rca 4101340250 rca8203arca 3832n62* rca to32n32832n4037 rca
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complement of 2N3053
Abstract: 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . Ir to 60 A . . . Pr to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0
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ito-391pt-85-11780-12sw30x30+1242x42103x103complement of 2n30532n3283npn 404112n3773 regulator404112n3774037540852coil 2n30532n2102
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40375
Abstract: 40411 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0
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ito-391pt-85-11780-12sw30x30+1242x42103x10340375404112n3772n21022n38792n40362n53202n53222n61782n6180
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N3283
Abstract: 2N6180 npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6175
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037
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ito-391pt-85-11780-12sw30x30+1242x42103x1032n32832n6180npn darlington 400v 15a2n21022n38792n40362n53202n53222n61782n6175
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RCA 40636 transistor
Abstract: rca 40636 rca 40327 RCA 40325 40327 rca RCA 2N3055 transistor 2N3055 RCA rca 40363 RCA 40321 BUX 115
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í lt > 1 A max. Pt - 10 W max. jTO-39»* lc > -1 A max. Py - 10 W max. (TO-39 * 32 x 32 a 42x42 42x42
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tq-6642x42130x1302n6177+152n34392n54152n358s2n62132n6079rca 40636 transistorrca 40636rca 40327rca 4032540327 rcarca 2n3055 transistor2n3055 rcarca 40363rca 40321bux 115
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40410
Abstract: MAX766 2N6179 40362 40394 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0
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ito-391pt-85-11780-12sw30x30+1242x42103x10340410max7662n617940362403942n21022n38792n40362n53202n5322
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