2N3263
Abstract: 2N3265 2N3266 jp6c 2n3264
Contextual Info: TYPES 2N3263. 2N3264. 2N326S. 2N3266 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED SWITCHING APPLICATIONS 30 Œ H • mc < Min fT = 20 MHz s P * *mechanical data U 2 N 3263, 2N 3 2 6 4 VI Z u T H E CO LLE C TO R IS IN E L E C T R IC A L C O N T A C T W IT H T H E CASE
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2n32632n32642n326s2n3266+22n3265jp6c
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RCA 40636 transistor
Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.
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ito-391-ito-220o-661ito-2201+13o-2201ito-31130x130rca 40636 transistorrca 40636rca 2n3771 power circuit40636 rcarca 40327300w transistor audio amplifier40636220v 300w ac regulator circuit2n3055 rca40327
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TRANSISTOR C 6090 npn
Abstract: RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
Contextual Info: lc sat Features •Excellent switching performance at high volt age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design
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o-22qrcs6832n65372n6530+162n63882n66662n6650rca87662n62842n6287transistor c 6090 npnrca power transistor to-3 4 225transistor c 60902n6675 rcapnp transistor beta values2n62* rca to3transistor 6090audio output transistor npndriver transistor hfe 60-1002n5415
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2N6178
Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053
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ito-391pt-85-11780-12sw30x30+1242x42103x1032n61782n61802n6181b0244cnpn darlington 400v 15a2n21022n38792n40362n53202n5322
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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BOX70
Abstract: 71T2 PT7933 B0221 ESM3000 SS2022 b0220 74T2 Solitron
Contextual Info: POWER SILICON NPN Item Number Part Number Manufacturer Ic Max A (V) fT hFE V(BR)CEO Min Max (Hz) ICBO Max (A) t, Max tf Max (8) (8) PD Max (W) Toper Max (Oe) Package Style Additional Transistors, (Co nt' d) 5 10 B0221 B0221 B0221 2N1644 HSE912 ST403 B0795
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b02212n1644hse912st403+10b0795ss2005box7071t2pt7933esm3000ss2022b022074t2solitron
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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2N3055
Abstract: 40327 40412 BDY71 2N1482 2N3054 2N344 2N5298 2N5786 2N6478
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.
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ito-391-ito-220o-661ito-2201+13o-2201ito-31130x1302n30554032740412bdy712n14822n30542n3442n52982n57862n6478
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2N6178
Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053
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ito-391pt-85-11780-12sw30x30+1242x42103x1032n61782n20162n3283transistor 2n60992n6180rca 402502n6474 jan2n55782n61772n2102
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2N4004
Abstract: 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127
Contextual Info: Case Outlines TO-61 2-67 max TO-63 TO-111 4 25 Metal Can Power \ High Reliability Professional Types continued Device Type 2N3789 2N3713 2N3715 2N3791 TIP5433 2N5940 2N3790 2N3792 2N5939 2N6127 2N6128 2N3714 2N3716 2N4301 TIP562 TIP563 TIP663 TIP664 TIP665
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o-111tc-262n37892n3713+152n371s2n3791tip54332ns9402n37902n40042n35512n19362n40052n326stip665tip540tip6642n61282n6127
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2N3055 power amplifier circuit
Abstract: 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386
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2n62922n61112n54952n6269+142n40362n6386ta82012n21022n3055 power amplifier circuit4063640363300w transistor audio amplifier200w silicon audio power transistor200w transistor audio amplifier408722n34392n406340412
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2N6180
Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037
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ito-391pt-85-11780-12sw30x30+1042x42103x1032n61802n32832n21022n38792n40362n53202n53222n6178
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TCA 2025
Abstract: 2N6674-2N6678 TFA 0305 RCP700 2N4036 2N6673 2N6674 2N6675 2N6676 2N6677
Contextual Info: lc sat Features •Excellent switching performance at high volt age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design
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2n21022n53222n5320rcp701+13rcp7002n38792n50382n3265tca 20252n6674-2n6678tfa 03052n40362n66732n66742n66752n66762n6677
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40636
Abstract: 2N3265 40321 40327 40363 150w class ab audio amplifier 40346 2N3055 2n3055 audio 200W AUDIO AMP
Contextual Info: 2N3055 F A M ILY [n-p-n] silicon f f = 0.8 MHz min; Py up to 150 W max 1 15-W Hom etaxial-Base, General Purpose 1 15-W Hom etaxial-Base, General Purpose 150-W Hom etaxial-Base, General Purpose 4 0-V , 1 17-W Hom etaxial-Base 45 60 80 40 55 70 85 45 _ 70
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2n30552n62532n62542n6371+102n3440406362n3265403214032740363150w class ab audio amplifier403462n3055 audio200w audio amp
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RCA 40409
Abstract: rca1a18
Contextual Info: High-Speed-Switching n-p-n and p-n-p Type Selection Charts h V CEO sus V CER <sus) V V C E V F E * » at V (sus) = 10 V Current—mA V V C E ICBO - M A Temp.-°C 0.01 10 50 V 150 1000 500 2N2102 FAMILY (n-p-n) General Purpose, Complementary to 2N4036 Family
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2n21022n4036o-39/to-205md2n697+82n16132n17112n30532n22702n6992n3053arca 40409rca1a18
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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RCA 40250
Abstract: 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax. (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 ic ■ 2 A m ax.
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ito-391pt-85-11780-12sw30x30+1242x42103x103rca 402508350a8203btransistors rca 4101340250 rca8203arca 3832n62* rca to32n32832n4037 rca
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40375
Abstract: 40327 40363 2N5323 2N3265 power inverter 140w dc to ac 2N2102 2N3879 2N4036 2N5320
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * l e * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037
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ito-391pt-85-11780-12sw30x30+1242x42103x1034037540327403632n53232n3265power inverter 140w dc to ac2n21022n38792n40362n5320
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complement of 2N3053
Abstract: 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . Ir to 60 A . . . Pr to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0
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ito-391pt-85-11780-12sw30x30+1242x42103x103complement of 2n30532n3283npn 404112n3773 regulator404112n3774037540852coil 2n30532n2102
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STI3009
Abstract: ESM3004 STIP8006 ESM3002 2SA1227AP STIP-8006 TRS-500 STI-3005 ESM3001 2SC3676
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) Po Max h re *T ON) Min (Hz) r ICBO (CE)sat Max Max (A) (8) Max (Ohms) T Op«r Package Style Max (°C) D vices 20 Watts or More, (Cont'd) 5 10 HSE830 BUW49 BUW49 SS2007
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hse830buw49ss2007ss2015+15ss2003ss2019ss2011ss20232n3263sti3009esm3004stip8006esm30022sa1227apstip-8006trs-500sti-3005esm30012sc3676
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40375
Abstract: 40411 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0
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ito-391pt-85-11780-12sw30x30+1242x42103x10340375404112n3772n21022n38792n40362n53202n53222n61782n6180
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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