VG 10 SAMSUNG Search Results

2N6155

Abstract: BUZ24 4900 SIEMENS BUZ10 buz90 buzh bup 314 BUZ11 F133 251C
Contextual Info: - 272 - m % f m * £ fê Ta=25,C Vg s t Vd s or Vd g (V) (V) *± £ V ÎD Pd %i * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) BS1Ü7A MOT N 200 ±20 0.25 0.6 10 15 BS170 MOT N 60 ±20 0.5 0.83 10 15 BSS123 MOT N 100 ±20 0.17 0.55 50 20 BUZ11 MOT

1RF530

Abstract: 1RF540 1rf630 RF543 BS107PT BS250F SD210 SD211 SD212 TD-12
Contextual Info: - 244 - ä! € tt f # t Vd s * $ fg Vg s Ta=25‘ C ie. IGSS Pd Id Vg s ID S S th) or € * /CH * /CH (A) m (Ta^'C) Ciss max Vd s (V) Vg s (V) 14 Coss Crss (V) (nA) SD2 1 0 CALOGIC N 30 ± 40 5 0m 1. 2 SD211 CALOGIC N 30 25 50m 1. 2 SD212 CALOGIC N 10 ± 40

IRF224

Abstract: IRF154 N IRF034 IRF035 IRF123 IBF220
Contextual Info: - 250 - T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E

irf113

Abstract: IRF224 buz90 buzh F133 IRF035 IRF034 IRF123
Contextual Info: - 250 T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E

1RF9620

Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
Contextual Info: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542

KMM5324100V

Contextual Info: KMM53241OOV/VG/VP DRAM MODULES 4M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324100V consist of eight C M O S 4M x 4 bit

Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung

Contextual Info: SA MS UN G E L E C T R O N I C S b7E D INC T T b M l H S D D 1 5 2 4 4 b31 • SMÛK ■ KM M53241OOV/VG/VP DRAM MODULES 4 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 5 QQ152fit. 0^0 I SMGK KM M53281OOV/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5328100V is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung

dxo 1100

Abstract: Y312
Contextual Info: PRELIMINARY SPECIFICATION KS0642 300/312CH SOURCE DRIVER FOR TFT LCD KS0642 64G/S 300/312CH. TFT LCD SOURCE DRIVER 1997. 7 . 21 SAMSUNG ELECTRONICS CO. LDI-97-P004-R0 97-07-21 ELECTRONICS 1 PRELIMINARY SPECIFICATION KS0642 300/312CH SOURCE DRIVER FOR TFT LCD

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF*125

Abstract: s4c diode IRFR IRFR020 0MFL IRFU025
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR020/22/24/25 IRFU020/22/24/25 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • □□1232Q 307 ■ SMGK D-PACK L ow e r R d s <o n > Im p ro ve d in du ctive r u g g e d n e s s F a s t s w itc h in g tim e s

HMR-11000

Abstract: HMR11000
Contextual Info: SAMSUNG ELECTRONICS INC O HARRIS bOE D 7^4145 OGlliaO ^ 05 HMR-11000 GaAs MMIC Attenuator DC-18 GHz PRODUCT DATA Features Applications * Low VSWR • Gain Control * Ultra Low Power Consumption • Temperature Compensation * Voltage Controlled Impedence • SPST Switching

ssh20n50

Abstract: ssm20n45 20N45 2on50 20n50
Contextual Info: D E j ? ci b m 4 2 000S3Û7 1 | : N-CHÂNNEL * POWER MOSFETS ? / \ -fó SAMSUNG SE MI CO NDUCT OR INC 2 SSM20N45/20N50 SSH20N45/20N50 ’ •> f Preliminary Specifications PRODUCT SUMMARY 500 Volt, 0.3 Ohm SFET V ds RoS on Id SSM20N45 450V 0.3 0 20A SSM20N50

IRF530

Abstract: IRF5303 IR IRF532 IRF530 mosfet IRFP130 OF IRF530 irf532 IRF531 reliability irf530 IRFP131
Contextual Info: SAMSUNG ELECTRONICS INC b4E P • 7^*4142 00121S7 h37 ■ SMGK N-CHANNEL POWER MOSFETS IRF530/531/532/533 IRFP130/131 /132/133 FEATURES TO-220 • Low er R d s <o n > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF440

Abstract: DDD511B DDD5141 IRF44 IRF441 IRF442 IRF443 mosfet 441 7964 mosfet
Contextual Info: 7964142 DE I T T b m M E SAMSUNG S E M I C O N D UCTOR 98D IN C D T S f -t3 05139 N-CHANNEL POWER MOSFETS □ □ □ S 1 3 ci 1 IRF440/441/442/443 FEATURES Low RD£i on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure

Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF413

Abstract: 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448
Contextual Info: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC

1rf520

Abstract: 1RF540 1RF620 1RF640 IRF510 RF523 IRF530 IRF532 IRF533 IRF541
Contextual Info: - 253 £> tt £ f m * £ V Vd s Vg s € Id Pd Vg s th lo s s I gss or * V dg Hr V) (V) ft eg. t S (Ta=25*0) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Id (mA) (Ta=25T3) lo (o n ) F Ds(on) Vd s = Vg s 14 C is s g fs Coss ft & 11 m Vg s =0

IRF9521

Abstract: f9520 IRF9520 Samsung
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure

IRF411

Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

BCM 4335

Abstract: relay btk 1012 ADP 3208 bcm 3380 btk 1012 1664810000 97ATEX6007X DIN EN 60999-1 HD 11070 moduflex
Contextual Info: Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio. As an OEM supplier, the company sets global standards in the