0MFL Search Results

Contextual Info: rrz SGS-THOMSON T0610XH T0612xH Ä 7# 0MflDIBI3®ilLiCTI3®Rlll Bl STANDARD TRIACS FEATURES • It(RMS = 6A > VDrm = 400V to 800V ■ High surge current capability DESCRIPTION The T06xxxH series of triacs uses a high performance MESA GLASS technology. These

Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E » • TTbHma N-CHANNEL POWER MOSFETS IRFP150/1511152/153 FEATURES • • • • • • • D Q 1 2 3 Ü 4 l b 1* ■ SMGK TO-3P Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

irf9630

Abstract: IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9230 IRF9632 IRF9631
Contextual Info: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

irf9610 samsung

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^b4142 0Q122bb SBQ « S M G K P-CHANNEL POWER MOSFETS IRF9610/9611 /9612/9613 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: 258A ß National Semiconductor 54F/74F258A Quad 2-Input Multiplexer with TRI-STATE Outputs General Description Features The 'F258A is a quad 2-input multiplexer with TRI-STATE outputs. Four bits of data from two sources can be selected using a common data select input. The four outputs present

shift registers

Abstract: q752
Contextual Info: ÇN7dAÇ1Qd ÇN RdAÇIQ d 4-BIT BIDIRECTIONAL UNIVERSAL SHIFT REGISTERS D2661, DECEMBER 1983 - REVISED MAY 1986 SN54AS194 . . . J PACKAGE SN74AS194 . . . D OR N PACKAGE Parallel-to-Serial, Serial-to-Parallel Conversions TOP VIEW Left or Right Shifts Parallel Synchronous Loading

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: Professional THmmers_ _ _ _ _ Q Meggitt Citec 6m m square m ultiturn Key features type 4270 series Small modem and reliable, this is a range of 6mm square multiturn trimming potentiometers well suited to industrial and professional • stable high resolution cermet element

3059 npn transistor

Contextual Info: 1SE D I SANYO SEM ICO NDUCTOR CORP 7 7 - 0 7b QDDBOñO 1 ~pns>-ÒT-oi LC7364 . V % CMOS LSI 3059 2571, ;| ¥4 P K DTMF/PULSE Switchable Dialer The LC7364 is a DTMF/OUTPUT-PULSE dialer CMOS LSI with redial function for use

SM 9613

Abstract: 9611 IR 9613 IRF9612 IRF961
Contextual Info: P-CHANNEL POWER MOSFETS IRF9610/9611/9612/9613 FEATURES • • • • • • • Lower Rds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

irf3203

Abstract: irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722
Contextual Info: IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 N’CHANNEL POWER MOSFETS FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area

IRF9640

Abstract: irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IRF9641 IIRF9640
Contextual Info: FEATURES TO -220 0G12EÔ3 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF9640/9641/9642/9643 7^4142 •