tfk 19
Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • TTltUiPdDMKlMelectronic 6 1 2 0 0 % DODTbbS TFK 5070 D Crwtivt Tfchnolog* Preliminary specifications NPN Silicon Darlington Power Transistor r - 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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t012615a3dintfk 19tfk 102+8tfk 19 001tfk 1055070dtfk 282tfk diodetfk 3bdiode s .* tfktelefunken ta 750
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diode B14A
Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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00chb51000rb52t012615a3din+10diode b14ab14a diodetfk 03 diodetfk3070dtfk 001b14a23 tfk 001tfk u 269tfk 03tfk3070
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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TFK u 116
Abstract: tl 271 TFK 725 tfk 108 TFK 311 tfk 140 TFK 450 dc/TFK 730
Contextual Info: M ECL M C 350 series UNE DRIVER MC365 L in d r i v e r f o r d r i v i n g l i n e s o f 5 0 o h m s o r g r e a t e r w h ile p r o v id in g th e p o s itiv e logic ' N O R fu n c tio n a n d its c o m p le m e n t s im u lta n e o u s ly . E L E C T R IC A L C H A R A C T E R IS T IC S
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mc36550-ofctfk u 116tl 271+6tfk 725tfk 108tfk 311tfk 140tfk 450dc/tfk 730
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748
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la 7518
Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen
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bcw60cbcw60d200hzla 7518+2tfk 450bcw60
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SGLA36AT0600
Abstract: SGHA36AT0600 GE TFK Breakers SELA36AT0100 SGHA36AT0400 TFK4 Cable GEH-5591 SKHA36AT1200 skla36at0800 sfla36at0250
Contextual Info: Molded Case Circuit Breakers Molded Case Circuit Breakers – Features .3-2 Spectra RMS Circuit Breakers with MicroVersaTrip Plus Trip Units – Features .3-3 Molded Case Circuit Breakers – Quick Reference Guide .3-4
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480/277vsgla36at0600sgha36at0600ge tfk breakers+7sela36at0100sgha36at0400tfk4 cablegeh-5591skha36at1200skla36at0800sfla36at0250
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483
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fagor 2FEP
Abstract: HVR062 Fagor 1005 fagor fb 5001 DO-201AD fagor 2fbp HVR4-10 fagor B D0G0A44 hvr3
Contextual Info: S7E D FAGOR n w w n • BMSTBES □□□07S1 DMT « F G R S FAfiOR ELECTRONICS Voltage 10.000 V. Current 450 mA • Low cost • Diffused junction • High current capability • The plastic material carries U/L recognition 94 V-0 • Terminals: Axial Leads
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34s132shvr4-10c2-17do-201ad+10do-27ado-201aefagor 2fephvr062fagor 1005fagor fb 5001fagor 2fbpfagor bd0g0a44hvr3
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Tfk 680
Abstract: TFK 201 tfk 140 TFK 175 tfk 830 tfk 145 BF 184 transistor TFK 03 BF184 6 tfk 145
Contextual Info: V BF 184 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: A llg e m e in und g e re g e lte H F-V erstärke rstu fe n bis 100 M H z Applications: G e ne ra l and c o n tro lle d R F am p llfie r s ta g e s up to 100 M H z
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tfk 680tfk 201tfk 140tfk 175+6tfk 830tfk 145bf 184 transistortfk 03bf1846 tfk 145
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TFK 839
Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
Contextual Info: Tem ic Sales Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Hungary THMIC Dansk c/o AFXi Dansk Aktieselskab Roskildevej 8-10 2620 Albcrtslund Tel: 45 42 64 85 22 Fax: 45 43 62 62 28 TEMIC TELEFUNKEN microelectronic GmbH Kruppstrasse 6 45128 Essen
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tfk 839tfk 609tfk 834aeg tfk telefunken+6tfk 809tfk 893tfk 9730tfk 944tfk 505 am diodetfk 817
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Tfk 931
Abstract: d25n12 TF2000EP tfk 947 TF5000P tfk 948 tfk 918 D30EJ tfk 945 TF1000EP
Contextual Info: TRANSFORMERS daykin PRICE LIST April 1996 ELECTRIC CORPORATION Machine Tool Transformers Single Phase Open Construction . . . Page 52 TA Series Part No. VA Rating List P rice Part No. $100.00 VA Rating VA Rating List P rice TA251U 250 500 $151.00 TA501U 500
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ta251ta501ta751ta1001+16ta1501ta2001ta3001ta5001ta251kta501ktfk 931d25n12tf2000eptfk 947tf5000ptfk 948tfk 918d30ejtfk 945tf1000ep
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tfk U 2550
Abstract: TFK 490 R325CH tfk 830 tfk 2550 tfk 731 R355CH tfk 810 TFK 242 R210CH
Contextual Info: D is trib u te d G ate T h y ris to rs -— All types Type v DRM/ ^RRM Tq 200V/ps Range ^Tav ^TR j A 50 % Duty Cycle T1 S IN K Jcici °C J s ne wav e Tte 55°C Sq uare m ive 1C0 A/|js ec di/dt I-T R M S Rep/IMon- 25°C It ItSM(1) 25°C VR=s 60% Rep I tSM(2)
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00v/ps00v/psec10msectfk u 2550+9tfk 490r325chtfk 830tfk 2550tfk 731r355chtfk 810tfk 242r210ch
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TFK U 2840 B
Contextual Info: SAB 2000 Monolithisch integrierte Schaltung Monolithic Integrated Circuit P-Kanal MOS, Ionenimplantation P-channel MOS, ion im plantation Anwendung: Fernbedienung für Farbfernsehem pfänger Kodierschaltung fü r den Ultraschall- oder Infrarot-O szillator
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6r8 COIL
Abstract: ELL6PV3R3N 31S1 ELL6PV100M ELL6PV120M ELL6PV150M ELL6PV180M ELL6PV220M ELL6PV270M ELL6PV330M
Contextual Info: ñ ft 2002^4^23 B : April 23,2002_ Date of Issue % ft E % m Classification: * New ri L I Change n LJ To Digi-K ev M A f t » * PRODUCT SPECIFICATION FOR INFORMATION m sä & # Product Description : m s pdp s Product Part Number : E L L 6 P v n n n n
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tldc-020134m23b100mm400mm+12151-ell6-1000pcs6r8 coilell6pv3r3n31s1ell6pv100mell6pv120mell6pv150mell6pv180mell6pv220mell6pv270mell6pv330m
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MOC7811 optocoupler
Abstract: MOC7811 QTC 4N35 working of MOC7811 QTC 4N25 OMRON 1230 opto moc7811 speed sensor NEC PS2001B MOC7811 PIN DETAILS MOC7811 pin diagram with smoke detector
Contextual Info: Optocouplers Data Book 1996 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide – Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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tcst1103tcst2103tcst2000tcst2300+11tcst1300moc7811 optocouplermoc7811qtc 4n35working of moc7811qtc 4n25omron 1230 optomoc7811 speed sensornec ps2001bmoc7811 pin detailsmoc7811 pin diagram with smoke detector
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tfk 825
Contextual Info: 1M x 1 Static RAM Features Functional Description • High speed T he CY7C1007 is a high-perform ance C M O S static R A M organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is provided by an active LO W chip enable C E and th ree-state drivers.
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tfk 136
Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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thmy6416c1beg-80l216-word64-bitthmy6416c1beg+2tc59s6408bfttfk 136
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tfk td 119
Abstract: 6 TFK 106 tfk 138 TFK u 116
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT LOCAL ATM SONET FRAMER The /¿PD98402A is one of the ATM-LAN LSIs and incorporates the TC sublayer function in the SONET/SDHbased physical layer of the ATM protocol. The main functions of the /iPD98402A include a transmit function for
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upd98402a/ipd98402apd98402atfk td 119+36 tfk 106tfk 138tfk u 116
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temic 0675 d4
Abstract: temic 0675 c9 TFK 404 telefunken transistor Temic IDIC chip 5551 preliminary schematic diagram pioneer amplifier sa 9800 7-segment display tfk 308 temic 0675 d1 atmel e5550 AEG PS 451
Contextual Info: General Information R em ote Control Identification Systems M icrocontrollers Addresses Temic S e m i c o n d u c t o r s General Information Alphanumeric Index T y p e . T y p e . e5530 10, 300 TK5550F-PP
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e5530tk5550f-ppe5530h-232-gttk5560a-pp+16e5550tk5561a-ppe5561u2270bu2535bu2538btemic 0675 d4temic 0675 c9tfk 404telefunken transistortemic idic chip 5551 preliminaryschematic diagram pioneer amplifier sa 98007-segment display tfk 308temic 0675 d1atmel e5550aeg ps 451
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2n34a2n43a2n44a2n59a+162n59b2n59c2n60a2n60b2n60c2n61an17022n2772sa632n390al204a2n408tfk 940oc592n3742n1922
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4N 26 TFK
Contextual Info: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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my7216e1beg-80216-word72-bit+3thmy7216e1begtc59s6408bft4n 26 tfk
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TFK U 3212 M
Contextual Info: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636C Z Rev. 3.0 Feb.24,1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 (im CMOS technology for high performance and low power. The HM5118165 offers
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hm51181651048576-word16-bitade-203-636c+4576-word42-pin50-pintfk u 3212 m
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