12A3 Search Results

diode b3

Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
Contextual Info: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3

diode 12A3

Contextual Info: MDI100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

diode 12A3

Contextual Info: MID145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID145-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

Contextual Info: MID100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

Contextual Info: MID75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

diode 12A3

Contextual Info: MDI145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI145-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

MII145-12A3

Contextual Info: MII145-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 160 A VCE(sat) = 2.2 V Phase leg Part number MII145-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses

MII100

Contextual Info: MII100-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses

Contextual Info: MDI75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI75-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

MII75-12A3

Contextual Info: MII75-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 90 A VCE(sat) = 2.2 V Phase leg Part number MII75-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses

7512a3

Abstract: 10012A3 200-12A4 100-12A3 550-12A4 145-12A3 75-12A3
Contextual Info: N P TIG B T Modules i • High Short Circuit SOA Capability I 1 ■ —II- I I MDI I VCES Type ■c ^CE *at Tc = 25°C A Tc = 80°C A V 37 52 73 25 38 50 80 ► Mil 100-12A3 ► MID 100-12A3 ► MDI 100-12A3 Package style Eon® typ. 125°C mJ Eoff ^thJC

MT-8-15A06

Abstract: DP 6 W DMT-8-12A05 Power transformers
Contextual Info: Series 241 and DP 241 Power Transformers CHASSIS-TRAN Power Transformers Single 115V 241-3-10A1 241-4-10A11 241-5-10A21 241-6-10A31 241-7-10A41 241-8-10A51 241-3-12A2 241-4-12A12 241-5-12A22 241-6-12A32 241-7-12A42 241-8-12A52 241-3-16A3 241-4-16A13 241-5-16A23

R14 P1F

Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
Contextual Info: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CF26AXBG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CF26A

Contextual Info: SN74ALVCH16863 18-BIT TRANSCEIVER WITH 3-STATE OUTPUTS SCES060A- DECEMBER 1995 - REVISED SEPTEMBER 1997 Member of the Texas Instruments Widebus Family DGG OR DL PACKAGE TOP VIEW EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process io e a b

TA 4572 BP

Abstract: 2171B 2600 corning la 7680 AD17 MPC8245 PC8245
Contextual Info: Features • 300 MHz - 333 MHz To Be Confirmed-PC603e Processor Core Implementing the • • • • • • • • PowerPC Architecture 32-bit PCI Interface Operating at up to 66 MHz Memory Controller Offering SDRAM Support up to 133 MHz Operation, Support up to

lt 8225

Abstract: 24A100S sm 8012 15A9D 5A250S 12A150S 24A15 12A100S 12a12d 5A48S
Contextual Info: JLIN-27-2003 10:14 PICO ELECTRONICS INC. 914 738 8225 P .03/09 -e r m SERIES A/SM SURFACE MOUNT and PLUG-IN Hi Reliability and Ultra-Miniature SERIES A: Low Profile 0.5" x 0.5" x 0.3” Height! .»up to U S Watts SERIES SM: Low Profile 0.5" x 0.5" x 0J40" Height! .„up to 125 Watts

Loctite 576

Contextual Info: Order Number: MPC8245EC/D Rev. 0.4, 9/2001 Semiconductor Products Sector Advance Information MPC8245 Integrated Processor Hardware Specifications The MPC8245 combines a PowerPCTM 603e core microprocessor with a PCI bridge. The PCI support on the MPC8245 will allow system designers to rapidly design systems using peripherals already designed for

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

6A4 mic DIODE

Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE

smd diode c539

Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
Contextual Info: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF

SLB9635TT12

Abstract: SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 BA41-00905A 20B3 diode BA09-00009A B503 F
Contextual Info: SENS X360 A B C D 4 SAMSUNG PROPRIETARY 3 4 HJ KIM Jun PARK T.R. Date 3 JS EUH APPROVAL : Dev. Step Revision CHECK BA41-00906A GCE : PR/MP : 1.1 DRAW Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page.

oz960

Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO

ST T4 D560

Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS