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    diode 12a3 Datasheets

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    Part ECAD Model Manufacturer Description Download Buy
    BD18333EUV-M ROHM Semiconductor 24CH Linear LED Driver Embedded Automotive Lamps LED Driver Visit ROHM Semiconductor
    BD18353EFV-M ROHM Semiconductor 1ch High Current LED Controller for Automotive Visit ROHM Semiconductor
    BD18362EFV-M ROHM Semiconductor Automotive Dynamic Indicator Lamps 8ch Matrix LED Controller Visit ROHM Semiconductor
    BD8389FV-M ROHM Semiconductor 12ch LED Driver IC for Automotive with 3-line Serial Interface Visit ROHM Semiconductor
    BD18347AEFV-M ROHM Semiconductor For Automotive, 40V 150mA 4ch Constant Current LED Driver Visit ROHM Semiconductor
    BD18347EFV-M ROHM Semiconductor For Automotive, 40V 150mA 4ch Constant Current LED Driver Visit ROHM Semiconductor

    diode 12a3 Datasheets Context Search

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    diode 12A3

    Abstract: No abstract text available
    Text: V gate drive. A switch is only as good as its companion free wheeling diode . Forthis reason, all , circuits or any other application requiring high diode switching speeds. The IGBT modules use Direct Copper , Table 2: Discretes IGBT with improved SCSOA capability (pages 19-20) Type : Single-IGBT with Diode , Single -IGBT j Single-IGBT i with Diode IXSA.N IXSP.N IXSH.N IXSM.N IXSP.N.A IXSH.N.A IXSM.N.A , high speed 1200 V standard 1200 V low loss With Diode IXDP.-06BD1 IXDH.-06BD1 Without Diode


    OCR Scan     		PDF -12D1 -12D1 -06P1 -12P1 -03G4 -03S4 -12A3/A4 diode 12A3

    BTD24-03S250D

    Abstract: No abstract text available
    Text: % 0 to 2000 20 40 80 4 0 /1 2 0 84 12±3 % 0 to 800 40 100 200 3 0 /1 , -12S80X Input Voltage (V) 4.5 to 9 BTD05-12W40X 12±3 % Oto 1000 40 100 15±3% 0 to 800 , 80 4 0 /1 2 0 86 12±3 % Oto 1000 40 100 200 3 0 /1 2 0 87 BTD12 , 86 12±3 % Oto 1000 40 100 200 3 0 /1 2 0 88 15±3% 0 to 800 40 100 , circuit when connection may be reversed. Below diagram is an example of using fuse and diode . FUSE


    OCR Scan     		PDF AC500V BDD20070926 BTD24-03S250D

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: .N.B 11 j MID/MDL- 12A3 MID/MDI.-12A4 IGBT with Diode Contact IXYS for high reliability screening , good as its com pa nion free-w heeling diode . For this reason, all IG BTs w ith integrated diodes , application requiring high diode sw itching speeds. The IG BT m odules use D irect C opper Bonded (DCB , capability (page 11) SCSOA = Short Circuit Safe Operation Area Single-IGBT w ith Diode Type Single-IGBT I Type Single -IG BT Singie-IGBT with Diode 1 low Vr (i 1 IXGA.N. IXGP.N


    OCR Scan     		PDF T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1

    BU 508 transistor

    Abstract: FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3
    Text: €¢ Monolithic integrated inverse diode T-33-13 • Short switching times • High peak power • Power , diode /F=4A Vf Gain bandwidth product Vce = 5 V,/c= 100 mA, f=B MHz' fT Collector base capacitance , For case 12A3 DIN 41 869 JEDEC T0126 (SOT 32) 14A 3 DIN 41 869 JEDEC TO 220 (SOT 78) 15A3DIN 41 869


    OCR Scan     		PDF T-33-13 DIN41 T0126 15A3DIN BU 508 transistor FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3

    TFK diode

    Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
    Text: reverse voltage • Short switching times • Very fast C-E-free-wheel diode Case variations • Base , Junction case Power transistor Free-wheel diode Characteristics Tem = 25°C, unless otherwise specified , voltage of the diode /f-30A Switching characteristics Inductive load, 100 °C /c - 30 A, /B,=0.6 A , devices per reel 564542 8.2. 912884 8.3 191131 8.4 191140 8.5 569524 8.6 For case 12A3 DIN 41 869


    OCR Scan     		PDF S1000 2/1997-0888E T0126 15A3DIN TFK diode diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3

    diode tfk s 220

    Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
    Text: reverse voltage • Short switching times • Very fast C-E-free-wheel diode • Base 1 and base 2 , diode Characteristics Tcm"2B °C, unless otherwise specified Collector cut-off current VCE« 1000 V V , « 48 A,/r1 = 1.4 A, -Ib2 = 2 A Forward voltage of the diode /f-30A Switching characteristics , For case 12A3 DIN 41 869 JEDEC T0126 (SOT 32) 14A 3 DIN 41 869 JEDEC TO 220 (SOT 78) 15A3DIN 41 869


    OCR Scan     		PDF S1000 O888E T0126 15A3DIN diode tfk s 220 tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321

    tfk 19

    Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
    Text: €¢ Short switching times • Very fast C-E-free-wheel diode Case variations Preliminary specifications , Junction case Power transistor Free-wheel diode Characteristics — 25 °C, unless otherwise specified , the diode If" 25 A Switching characteristics Inductive load, 7"c(s< = 100 ®C /c - 25 A, /„, -1.5 , reel in mm 7.2.2 Quantity of devices 3000 devices per reel For case 12A3 DIN 41 869 JEDEC T0126 (SOT


    OCR Scan     		PDF T0126 15A3DIN tfk 19 TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750

    Not Available

    Abstract: No abstract text available
    Text: g (Typ.) 1 1A4 42 l v CC 41 I m i 40 ¡2 A 2 39 I g n d 38 12A3 37 12A4 36 l i A l 3$ ¡ M 2 34 , Diode Current Output Diode Current DC Output Current Power Dissipation DC Vcc/Ground Current Storage


    OCR Scan     		PDF TC74LCX16244AFT 16-Bit TC74LCX16244AFT G-136

    diode B14A

    Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
    Text: €¢ Short switching times • Very fast C-E-free-wheel diode Case variations Preliminary specifications , thermal resistances Junction case Power transistor Free-wheel diode Characteristics TMli=25 °C , ~^ A,/B1-»= 1.4 A, ¿ = 12 (JH -VBB = 7V.flBB = 0.60,Vs = 50V Forward voltage of the diode 'F 1317 , devices 3000 devices per reel For case 12A3 DIN 41 869 JEDEC T0126 (SOT 32) 14A 3 DIN 41 869 JEDEC TO


    OCR Scan     		PDF 00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Table 1H MOSFET/IGBT Thyr./ Diode Controller/ FRED Schottky Thyr./ Diode ISOPLUS , Module Module Rec. Bridge*) *) Diode *) discrete device*) 592 35 169 4932 2 3 , 3G Table 3H MOSFET/IGBT Thyr./ Diode Controller/ FRED Schottky Thyr./ Diode , Cycles Table 3B MOSFET/IGBT Module Module Rec. Bridge*) *) Diode *) discrete , 4H Table 4J MOSFET/IGBT Thyr./ Diode Controller/ FRED Schottky Thyr./ Diode


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250

    12A-3

    Abstract: No abstract text available
    Text: 1 111 1 1 112 1 113 1 1 14 1 1 15 1 1 11 1 12A3 12A4 3 7 ! 13A1 361 13A2 351 38 1 3 4 ! 33 , TC74VCX162244FT MAXIMUM RATINGS PARAMETER Power Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current Power Dissipation DC V q q /Ground Current Per Supply Pin


    OCR Scan     		PDF TC74VCX162244FT 16-BIT TC74VCX162244FT 16bit TSSOP48-P-0061 12A-3

    Not Available

    Abstract: No abstract text available
    Text: 24 (TOP V IE W ) I1 1A4 I1V CC 41 I12A1 40 I 1 2A2 39 38 1GND 1 1 12A3 1 2A4 37 ! 3 6 11 , Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current


    OCR Scan     		PDF TC74VCX162244FT 16-BIT TC74VCX162244FT 16bit TSSOP48-P-0061

    P174FCT

    Abstract: p174fct162 i6240
    Text: Z2 G N D I 2A2 12A3 13A0 1 3A1 GND 2Y2 Q 2Y3 Q 3Y0 3Y1 GND Q Q Q Q Q Q Q 48-PÏN V48 A , LOW Current Bus Hold Sustain Current High Impedance Output Current Clamp Diode Voltage Short Circuit


    OCR Scan     		PDF PI74FCT16240T, PI74FCT162240T, PI74FCT162H240T PI74FCT16240T PI74FCT162240T 16-Bit PI74FCT P174FCT p174fct162 i6240

    2006 - 1S3063

    Abstract: sharp, 1s3063
    Text: PC1S3063NTZF Series PC1S3063NTZF Series VDRM : 600V Zero cross type DIP 6pin Phototriac Coupler for triggering ■Description ■Agency approvals/Compliance PC1S3063NTZF Series Phototriac Coupler include an infrared emitting diode (IRED) optically coupled to an output Phototriac. These devices feature full wave control and are ideal isolated drivers for medium to high current , 1.2∗3 600 VDRM Viso(rms) 5 Topr −30 to +100 Tstg −55 to +125 Tsol 270 (Ta=25˚C ) Unit


    Original     		PDF PC1S3063NTZF PC1S3063NTZF UL1577 E64380 1S3063) CA95323 D2-A08901EN 1S3063 sharp, 1s3063

    Not Available

    Abstract: No abstract text available
    Text: Military Commercial Il Output HIGH Voltage C CO M Input Clamp Diode Voltage All inputs , exceed one second. The use of high speed test 12Æ3 apparatus and/or sample and hold techniques are


    OCR Scan     		PDF CY54/74FCT2646T CY54/74FCT2648T R25f2 2646T 2646AT 2646CT 2648T 2648AT 2648CT MIL-STD-883,

    Not Available

    Abstract: No abstract text available
    Text: 5 1 12A2 341 1G N D INPUT 20E L L H X Z 2DIR L H X OUTPUT A =B B =A Z 118 vcc 1 1 12A3 1 , MAXIMUM RATINGS PARAMETER Power Supply Voltage DC Input Voltage (DIR, OE) DC Bus I/O Voltage Input Diode Current Output Diode Current DC Output Current Power Dissipation DC V q q /Ground Current Per Supply Pin


    OCR Scan     		PDF TC74VCX16245FT 16-BIT TC74VCX16245FT 16bit TSSOP48-P-0061

    2012 - Not Available

    Abstract: No abstract text available
    Text: -0.2～(VCC +0.3) 0.5 0.8※3 -25～+75 -55～+150 150 4.0※2 -0.2～(VCC +0.3) 0.5 1.2※3 , prevents the false operation by voltage supplied via the electrostatic destruction prevention diode from , external direction diode can be added. (3) Power supply Lines Design PCB layout pattern to provide low , and GND＞(Terminal B) at the transistor (NPN), the P-N junction operates as a parasitic diode , layers of other elements close to the aforementioned parasitic diode . Because of the IC’s structure


    Original     		PDF BD6380EFV, BD6381EFV 12009EAT01

    2012 - Not Available

    Abstract: No abstract text available
    Text: €» ※2 3.47 W -0.2～+5.3 0.5 1.2※3 V V A/phase ℃ ℃ ℃ 1.5※3 -25～+75 , operation by voltage supplied via the electrostatic destruction prevention diode from the logic control , connecting the power supply lines. An external direction diode can be added. (3) Power supply Lines Design , and GND＞(Terminal B) at the transistor (NPN), the P-N junction operates as a parasitic diode , layers of other elements close to the aforementioned parasitic diode . Because of the IC’s structure


    Original     		PDF BD6393FP, BD6395FP 12009EAT05 BD6393FP BD6395FP

    6A4 mic DIODE

    Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
    Text: No file text available


    Original     		PDF VR6800 VR8290 XW6800 XW6801 XW6802 XW7100 XW7101 XW7103 XW7200 XW7310 6A4 mic DIODE r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF R8202 R6803 C8207

    coa 6 pins IC

    Abstract: DB10 HP5082-2835 MP87092 MP87092AN MP87092AS 3316T diode 12A3
    Text: ABSOLUTE MAXIMUM RATINGS (TA = +25°C unless otherwise noted) 1'2■3 Vqd to GND , Schottky diode clamps (HP5082-2835) from input pin to the supplies. All inputs have protection diodes which


    OCR Scan     		PDF MP87092 12-Bit MP87092 MP87XAR 3422t coa 6 pins IC DB10 HP5082-2835 MP87092AN MP87092AS 3316T diode 12A3

    2012 - Not Available

    Abstract: No abstract text available
    Text: Tjmax W -0.2～+5.5 0.5 1.2※3 V V A/phase ℃ ℃ ℃ 1.5※3 -25～+85 , via the electrostatic destruction prevention diode from the logic control input terminal to the Vcc , diode can be added. (3) Power supply Lines Design PCB layout pattern to provide low impedance GND and , and GND＞(Terminal B) at the transistor (NPN), the P-N junction operates as a parasitic diode , layers of other elements close to the aforementioned parasitic diode . Because of the IC’s structure


    Original     		PDF 12009EAT11 BD63940EFV, BD63960EFV BD63940EFV BD63960EFV

    C3979

    Abstract: 65a3 ISL9504 Apple K23 MLB c5296 77A5 PP3V42G3H 65C6 ar9350 PP3V42
    Text: 12B3 84D6 7D5 12B3 84D6 7D8 12A3 12B3 84D6 Fan Connectors FUNC_TEST TRUE TRUE TRUE TRUE TRUE , 78C5 65C3 55D4 37A7 37D7 78C5 61B7 49B4 78D3 6D4 6D5 55C4 63A5 63A5 Thermal Diode , PLACE TESTPOINT ON FSB_IERR_L WITH A GND 0.1" AWAY D 5D5 12B3 84D6 11B5 12C3 84D6 12A3 84D6 12A3 84D6 12A3 84D6 12A3 84D6 12B3 84D6 5D5 84D6 5D5 12B3 84D6 12B3 5D5 84D6 12B3 5D5 84D6 12A3 5D5 84D6 12A3 5D5 84D6 12A3 5D5 BI BI BI BI BI BI BI BI BI BI BI BI BI BI BI BI BI BI BI BI BI IN OUT IN


    Original     		PDF

    smd diode c539

    Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
    Text: No file text available


    Original     		PDF S630/S670 BA60-00030A BA68-40005L BA70-00030A BA72-00063A BA73-00001A BA92-00073A 0404agrams smd diode c539 samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button

    B647C

    Abstract: diode 624 u1g B4K1
    Text: +1542)AA161B)2811F(161 F17FD1&6C1B)281E6F6E1E+%1 12A3 :EFA161B)281116 , Module Diode COM Express Carrier Board CPU Intel Atom Z530/Z510 Voltage Regulators


    Original     		PDF ABCBDEFFC66 4D4256 D425D6 BCA81 ACA21 1B2A81 FE-13A2A1 FE-13ACA B647C diode 624 u1g B4K1

    2006 - diode 6a6

    Abstract: C65 004 5d4 diode MAX1675 12b3 diode smd 5b1 5B1 smd transistor rj48 to db9 IO103 smd transistor 6c5
    Text: D1 1 1A 50V general-purpose silicon diode General Semiconductor 1N4001 DS1, DS2


    Original     		PDF DS26504DK T1/E1/J1/64K/8KCC DS26504DK DS26504 MMC2107 CY62128V diode 6a6 C65 004 5d4 diode MAX1675 12b3 diode smd 5b1 5B1 smd transistor rj48 to db9 IO103 smd transistor 6c5
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