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    diode B14A

    Abstract: B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24 IRFP450
    Text: /dt Peak Diode Recovery dv/dt ® 3.5 V/ns Tj Tstg Operating Junction and Storage Temperature Range , — — -100 Vgs=-20V . Qg Total Gate Charge — — 150 nC b=14A Vds=400V Vgs=10V See Fig. 6 and , ) Turn-On Delay Time — 17 — ns Vdd=250V b=14A Ro=6.2n Rd=1 7il See Figure 10 ® tr Rise Time — 47 â , Current (Body Diode ) — — 14 A MOSFET symbol _ showing the f\ I— integral reverse G~X.H J p-n junction diode . Is Ism Pulsed Source Current (Body Diode ) © — — 56 Vsd Diode Forward Voltage — â


    OCR Scan     		PDF IRFP450 O-247 T0-220 O-218 diode B14A B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24

    diode B14A

    Abstract: bjt 100a B14A equivalent 2D11002-120 M210 power BJT 100A B14A
    Text: FUJI SÜMSHSDE 2D11002-120 2-Pack BJT 1200 V 100 A POWER TRANSISTOR MODULE : Features • iSftNEE High Voltage 07 ij -^-f iJ >9KF*g/R Including Free Wheeling Diode • ASO Excellent Safe Operating Area • Insulated Type ■fflii : Applications i High Power Switching • AC A.C Motor , , Vce=5V 100 lc=100A„ Vce=2.8V, Tj = 125°C 75 ZIU^^-XÌ EE VcE(Sat) Ic-lOOA, î b-1.4A 2.8 , ) Transistor 0.156 °C/W ^ ffi ÎÂ Rth(j-c) Recovery Diode 0.65 °C/W îïft & ÎA Rth(c - f) With


    OCR Scan     		PDF 2D11002-120 E82988 diode B14A bjt 100a B14A equivalent 2D11002-120 M210 power BJT 100A B14A

    diode B14A

    Abstract: IRFIP450 B14A diode B14A B14A marking irf-ip450 9645a
    Text: dv/dt Peak Diode Recovery dv/dt ® 3.5 V/ns Tj Operating Junction and -55 to+150 Tstg Storage , €” 80 td(on) Tum-On Delay Time — 17 — ns Vdd=250V b=14A Rg=6.2£2 Rd=17î2 See Figure 10© tr Rise , Parameter Min. Typ. Max. Units Test Conditions ls Continuous Source Current (Body Diode ) — — 10 A MOSFET symbol showing the / I integral reverse G-\ [*1 p-n junction diode . d ) s ISM Pulsed Source Current (Body Diode ) © — — 40 VsD Diode Forward Voltage — — 1.4 V Tj=25°C, ls=10A, Vgs=0V Â


    OCR Scan     		PDF IRFIP450 O-247 t50KO diode B14A B14A diode B14A B14A marking irf-ip450 9645a

    diode B14A

    Abstract: No abstract text available
    Text: Single Pulse Avalanche Energy ® Avalanche Current T Repetitive Avalanche Energy £ Peak Diode , 25°C, ID= 1mA VGs=10V, ID=14A ® VDS=VGS, lo= 250uA VDS=50V, b=14A ® VDS=250V, V GS =OV VDS , Current (Body Diode ) ISM Vso Pulsed Source Current (Body Diode ) ® Diode Forward Voltage tr , Conditions MOSFET symbol ^_^ I! showing the r) integral reverse °Aj |LL S p-n junction diode


    Original     		PDF IRFP254 O-247 O-220 O-247 O-218 O-247AC ISDS23A, 80A/us, diode B14A

    Not Available

    Abstract: No abstract text available
    Text: -55 to +150 P d @ TC = 25°C Repetitive Avalanche Energy © Peak Diode Recovery dv/dt ® °C , gs= 0 V V ds=400V, V gs=0V, T j=125°C V gs = 2 0 V V gs=-20V b=14A V ds=400V V Gs = 1 0 V , Continuous Source Current (Body Diode ) Ism V sd Pulsed Source Current (Body Diode ) © Diode , reverse G ¡*1 -\ p-n junction diode . s Intrinsic turn-on time is neglegible (turn-on is , Voltage (volts) Fig 8. Fig 7. Typical Source-Drain Diode Forward Voltage 1022 Maximum Safe


    OCR Scan     		PDF PD-9458C IRFP450

    diode zener B14A

    Abstract: B14A smd zener b14a diode B14A B14A diode diode B14A smd B14A diode b14A surface smd b14a siemens frg
    Text: - mJ Inverse Diode Inverse diode forward voltage /p = 5*7a, in = 300 jis, l/|N = 0 V ^SD - 1.08 , . 0 -50 -25 25 50 75 100 °C 150 T\ Typ. input threshold voltage V|N(th) = f(Tj); b=1.4A ; VDS=12V 120


    OCR Scan     		PDF fl53Sb05 diode zener B14A B14A smd zener b14a diode B14A B14A diode diode B14A smd B14A diode b14A surface smd b14a siemens frg

    2009 - diode B14A

    Abstract: 82526 CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6402 TFDS6502E
    Text: modules are a photo PIN diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a , mode was added as 02 version. The output radiant intensity was increased. B1.4a , 26/10/1999:TR3


    Original     		PDF TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E TFDU6102E, TFDS6402, TFDS6502E, TFDT6502E 18-Jul-08 diode B14A 82526 CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6402 TFDS6502E

    2000 - diode B14A

    Abstract: b14a smd
    Text: photo PIN diode , an infrared emitter (IRED), and a low–power CMOS control IC to provide a total , floating output in shutdown mode was added as 02 version. The output radiant intensity was increased. B1.4a


    Original     		PDF TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E TFDU6101E, TFDS6401, TFDS6501E, TFDT6501E D-74025 diode B14A b14a smd

    2001 - diode B14A surface mount

    Abstract: B14A smd diode B14A diode B14A smd B14A diode FDC37C669 FDC37N769 diode b14A surface PC87109 PC87338
    Text: modules are a photo PIN diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a , mode was added as 02 version. The output radiant intensity was increased. B1.4a , 26/10/1999:TR3


    Original     		PDF TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E TFDU6102E, TFDS6402, TFDS6502E, TFDT6502E D-74025 diode B14A surface mount B14A smd diode B14A diode B14A smd B14A diode FDC37C669 FDC37N769 diode b14A surface PC87109 PC87338

    2000 - diode B14A

    Abstract: telefunken ta 750 amplifier
    Text: based remote control modes up to 2 MHz. Integrated within the transceiver modules are a photo PIN diode , mode was added as 02 version. The output radiant intensity was increased. B1.4a , 26/10/1999:TR3 changed


    Original     		PDF TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E TFDU6101E, TFDS6401, TFDS6501E, TFDT6501E D-74025 diode B14A telefunken ta 750 amplifier

    2000 - diode B14A

    Abstract: B14A smd CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6402 TFDS6502E
    Text: photo PIN diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a total , output radiant intensity was increased. B1.4a , 26/10/1999:TR3 changed to TR4 for 01 types, weight of


    Original     		PDF TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E TFDU6102E, TFDS6402, TFDS6502E, TFDT6502E D-74025 diode B14A B14A smd CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6402 TFDS6502E

    2001 - diode B14A

    Abstract: TFDU6101E CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6401 TFDS6501E
    Text: diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a total front­end , shutdown mode was added as 02 version. The output radiant intensity was increased. B1.4a , 26/10/1999:TR3


    Original     		PDF TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E TFDU6101E, TFDS6401, TFDS6501E, TFDT6501E D-74025 diode B14A TFDU6101E CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6401 TFDS6501E

    2001 - diode B14A

    Abstract: diode B14A surface mount B14A smd CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6402
    Text: modules are a photo PIN diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a , mode was added as 02 version. The output radiant intensity was increased. B1.4a , 26/10/1999:TR3


    Original     		PDF TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E TFDU6102E, TFDS6402, TFDS6502E, TFDT6502E D-74025 diode B14A diode B14A surface mount B14A smd CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6402

    diode B14A

    Abstract: B14A diode telefunken ta 750 CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6401
    Text: photo PIN diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a total , floating output in shutdown mode was added as 02 version. The output radiant intensity was increased. B1.4a


    Original     		PDF TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E TFDU6101E, TFDS6401, TFDS6501E, TFDT6501E D-74025 diode B14A B14A diode telefunken ta 750 CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6401

    2005 - B14A diode

    Abstract: No abstract text available
    Text: based remote control modes up to 2 MHz. Integrated within the transceiver modules are a photo PIN diode , . The output radiant intensity was increased. B1.4a , 26/10/1999:TR3 changed to TR4 for 01 types, weight


    Original     		PDF TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E TFDU6101E, TFDS6401, TFDS6501E, TFDT6501E TFDU61s 08-Apr-05 B14A diode

    2005 - telefunken ta 750 amplifier

    Abstract: diode B14A B14A smd B14A diode
    Text: a photo PIN diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a total , mode was added as 02 version. The output radiant intensity was increased. B1.4a , 26/10/1999:TR3 changed


    Original     		PDF TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E TFDU6102E, TFDS6402, TFDS6502E, TFDT6502E 08-Apr-05 telefunken ta 750 amplifier diode B14A B14A smd B14A diode

    2009 - diode B14A surface mount

    Abstract: diode B14A B14A smd B14A diode B14A FDC37C669 FDC37N769 PC87108 PC87109 PC87338
    Text: diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a total front­end , shutdown mode was added as 02 version. The output radiant intensity was increased. B1.4a , 26/10/1999:TR3


    Original     		PDF TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E TFDU6101E, TFDS6401, TFDS6501E, TFDT6501E 18-Jul-08 diode B14A surface mount diode B14A B14A smd B14A diode B14A FDC37C669 FDC37N769 PC87108 PC87109 PC87338

    2001 - diode B14A

    Abstract: telefunken ta 750 tr4 surface mount CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6401
    Text: diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a total front­end , floating output in shutdown mode was added as 02 version. The output radiant intensity was increased. B1.4a


    Original     		PDF TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E TFDU6101E, TFDS6401, TFDS6501E, TFDT6501E D-74025 diode B14A telefunken ta 750 tr4 surface mount CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6401

    diode B14A

    Abstract: baby CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6402 TFDS6502E
    Text: photo PIN diode , an infrared emitter (IRED), and a low­power CMOS control IC to provide a total , floating output in shutdown mode was added as 02 version. The output radiant intensity was increased. B1.4a


    Original     		PDF TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E TFDU6102E, TFDS6402, TFDS6502E, TFDT6502E D-74025 diode B14A baby CAM35C44 FDC37C669 FDC37N769 PC87108 PC87109 PC87338 TFDS6402 TFDS6502E

    Not Available

    Abstract: No abstract text available
    Text: G12 G11 B11” R1IN2+/- NA B15’ B14⠀™ B13’ B12’ DE NA NA , backlight system is edge-lighting type with 198 White-LED(White Light Emitting Diode , (11 serial x 3


    Original     		PDF LQ215M1LGN2 LD-22112 LD-22112-1 LQ215M1LGN2. LD-22112-19 LQ215M1LGN2) LD-22112-20 LQ215M1LGN2

    diode B14A

    Abstract: B14A S2035 52033 K285 S2032
    Text: vK Input clamp diode voltage Vcc = Min, lK = -18mA -.8 -1.2 V V„ Output HIGH voltage Vœ = Min, l , - tsu • EA5 B14A B295 II XXX U-fc SERDATOP (Hex) I OFA II 2A5 I 14A II 295 I OFA II 305 ~l


    OCR Scan     		PDF S2032/S2033 S2032 S2033 20-bit GDD1413 diode B14A B14A S2035 52033 K285

    2000 - MC68F375

    Abstract: diode B14A S4 46a DIODE schottky QADC64 XTAL 5V tx 2b rx 2b
    Text: CT - CTD[10:9]/[4:3], CTS[20A/B:18A/B:16A/ B14A /B] Port TP - TP[15:0] Group 7: Port QS - PQS7


    Original     		PDF MC68F375 MC68F375 diode B14A S4 46a DIODE schottky QADC64 XTAL 5V tx 2b rx 2b

    2001 - Laser Diode 10 pin

    Abstract: 10 pin laser diode WHS302 WLD3343 WLD3393 1k trimpot vertical RS910 VCSEL C 547 B Laser Diode 4 pin
    Text: · The WLD3343 is an easy-to-use analog circuit for space contstrained laser diode applications. The WLD3343 maintains precision laser diode current (constant current mode) or stable photodiode current (constant power mode) regulation using electronics that are compatible with any laser diode type. Safely supply up to 2.2 Amps of current to your laser diode . The HB version of WLD 3343 offers low , Low Cost Slow Start Laser Diode Protection Drive Up to 2.2 Amps Output Current Constant Current or


    Original     		PDF WLD3343 Apr-07 31-Aug-09 21-May-10 WLD3343HB00400A WLD3343HB Laser Diode 10 pin 10 pin laser diode WHS302 WLD3393 1k trimpot vertical RS910 VCSEL C 547 B Laser Diode 4 pin

    1999 - Microwave PIN diode

    Abstract: HSMP-3892 PIN diode SPICE model HSMP-3820 HSMP-3880 HSMP3890 HSMP-3890 HSMP-3894 HSMP-389X HSMP-4890
    Text: Applications for the HSMP-3890 Surface Mount Switching PIN Diode Application Note 1072 Introduction The PIN diode is generally considered to behave like a current controlled RF variable resistor1 , diode can produce disastrous results in terms of circuit performance. cost solutions to their , from poor distortion performance and are not as costeffective as PIN diode switches and attenuators in very large quantities. For over 30 years, designers have looked to the PIN diode for high


    Original     		PDF HSMP-3890 5962-9462E 5963-1247E Microwave PIN diode HSMP-3892 PIN diode SPICE model HSMP-3820 HSMP-3880 HSMP3890 HSMP-3890 HSMP-3894 HSMP-389X HSMP-4890

    Notes for Operation II

    Abstract: diode laser laser diode laser diode lifetime Laser Diode Mounts HIGH POWER DIODE
    Text: Notes for Operation II SAFETY / HANDLING / WARRANTY 1. Diode Laser Safety and General Handling Instructions 1.1 Safety Instructions High power diode lasers are - according to IEC-Standard1 - class 4 laser , observed to avoid any harm to operating personnel. · Persons working with high power diode lasers must wear suitable laser protection glasses. The diode laser beam must not hit anyone's eye, because it may cause irreversible damage of the eye's retina. · Diode laser should be operated in a light-tight


    Original     		PDF
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