2N44 Search Results

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

2N4403

Abstract: cd200
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2N4403 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES : . Low Leakage Current ; I c E V = - 1 0 0 n A ( M a x •)> l B E V = 1 0 0 nA ( M a x . ) @ VCE=-35V, V b e =0.4V

Contextual Info: m 4 5 E J> TCHTSiQ TO S H IB A TR A N S IS TO R GGlTTbS b T0S4 2N4402 SILICO N PN P E P IT A X IA L T Y P E PCT PR O C ESS TOSH IB A (DISCRETE/OPTO) Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER SI MAX, APPLICATIONS. FEATURES: ► Low Leakage Current

2N4403

Contextual Info: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N4403 - Central Semiconductor 2N4403

2N4403 noise figure

Contextual Info: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range

2n4416

Abstract: Siliconix N-Channel JFETs marking code vishay SILICONIX to-72 2N4416 Siliconix SST4416
Contextual Info: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number V G S o ff (V) V (B R )G S S Min (V) gfs Min (mS) loss (mA) -3 0 4.5 -2 .5 to - 6 -3 5 4.5 5 -< 6 -3 0 4.5 5 2N4416 -< 6 2N4416A SST4416 5 FEATURES BENEFITS APPLICATIONS

2N4416

Abstract: SST4416
Contextual Info: Tem ic 2N4416/2N4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits

2N3819 equivalent

Abstract: MAF100 sst4416 die 2n3819 equivalent ic
Contextual Info: NH SERIES DIE N-Channel JFETs The NH Series of n-channel JFETs is designed to provide high-performance amplification, especially at C fS iG c o n ix in c o rp o ra te d NH1CHP* N H 2C H P * NH 3CHP* 2N5484 J305 SST305 2N5485 2N3819 2N5486 2N4416 2N4416A J304

2N4400

Abstract: MMBT4400 PN2222A
Contextual Info: S S E fv llG O fs lO L J C îT Q R 2N4400 MMBT4400 M a rk : 83 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se a s g e n e ra l p u rp o s e a m p lifiers a n d s w itc h e s req uirin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N4401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

SOT-23 2N4403

Abstract: 2N4403
Contextual Info: 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package

2N4416A

Abstract: LS4416 2N4416 JFET HIGH FREQUENCY
Contextual Info: 2N/SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER Linear Integrated Systems FEATURES Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE 400 MHz 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min) 1 2N SERIES ABSOLUTE MAXIMUM RATINGS

2N4401

Abstract: 2N4401 transistor
Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N4401 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current A ICM : 0.6 Collector-base voltage V V(BR)CBO : 60 1.EMILTTER 2.BASE 3. COLLECTOR

2N4427

Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
Contextual Info: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39

2N4410

Abstract: 1N914 transistor 2N4410
Contextual Info: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc

2N4400 2N4401

Abstract: 2N4400 2N4401 2n4401 amplifier 1-B215
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N4400 / 2N4401 NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC General Purpose Switching And Amplifier Applications

AN9006

Abstract: SOT23 MARK Y3 C2N4403 2n4403
Contextual Info: 2N4403 / MMBT4403 2N4403 MMBT4403 C E C B TO-92 B SOT-23 E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: 45E D • TCH72S0 00177b? T «TOSH TOSHIBA TRANSISTOR - 2N4403 SILICON PNP EPITAXIAL TY P E PCT PROCESS TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : I c E V = _ 1 0 0 n A ( M a x .) ,

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

Contextual Info: NEW PRO DUCT NEW PRO DUCT 2N4401 SMALL SIGNAL TRANSISTORS NPN FEATURES TO-92 0.181 (4.6) 0.142 (3.6) ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor 2N4403 is recommended.

2n4427 MOTOROLA

Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz

Contextual Info: MICRO CASE T0-92A THE 2N4400, 2N4401 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N4402 AND 2N4403 RESPECTIVELY. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

2n4449

Contextual Info: Data Sheet No. 2N4449 Generic Part Number: 2N4449 Type 2N4449 Geometry 0005 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/317 Features: • • • • General-purpose high-speed switching transistor. Housed in a TO-46 case. Also available in chip form using