MGF09 Search Results

MGF09 Datasheets (51)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGF0904	Mitsubishi	L,S BAND POWER GaAs FET	Scan	PDF	644.62KB	3
MGF0904	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	50.76KB	1
MGF0904	Unknown	FET Data Book	Scan	PDF	77.49KB	2
MGF09044A	Mitsubishi	L,S BAND POWER GaAs FET	Scan	PDF	112.67KB	3
MGF0904A	Mitsubishi	L,S BAND POWER GaAs FET	Original	PDF	291.57KB	4
MGF0904A	Mitsubishi	MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET	Scan	PDF	112.67KB	3
MGF0904A	Mitsubishi	L, S Band Power GaAs FET	Scan	PDF	111.34KB	3
MGF0905	Mitsubishi	L,S BAND POWER GaAs FET	Scan	PDF	111.14KB	3
MGF0905	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	50.76KB	1
MGF0905	Unknown	FET Data Book	Scan	PDF	77.49KB	2
MGF0905A	Mitsubishi	L,S BAND POWER GaAs FET	Original	PDF	294.26KB	4
MGF0905A	Mitsubishi	MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET	Scan	PDF	111.14KB	3
MGF0906	Mitsubishi	L,S BAND POWER GaAs FET	Scan	PDF	121.66KB	3
MGF0906B	Mitsubishi	L,S BAND POWER GaAs FET	Original	PDF	303.32KB	4

MGF0906B	Mitsubishi	MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET	Scan	PDF	121.66KB	3
MGF0907	Mitsubishi	L,S BAND POWER GaAs FET	Scan	PDF	121.08KB	3
MGF0907B	Mitsubishi	L,S BAND POWER GaAs FET	Original	PDF	302.98KB	4
MGF0907B	Mitsubishi	MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET	Scan	PDF	121.08KB	3
MGF0909	Mitsubishi	L,S BAND POWER GaAs FET	Original	PDF	22.55KB	3
MGF0909A	Mitsubishi	TRANS JFET N-CH 10V 5000MA 3GF-7	Original	PDF	35.18KB	3

MGF09 Price and Stock

Filter by Manufacturer

Select Manufacturer


Mitsubishi Electric MGF0951P RF L AND S BAND GaAs FET Plastic Mold Lead-less PKG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGF0951P		1,388			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric MGF0907B-11
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGF0907B-11		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Electronic Components MGF0906B S BAND, GAAS, N-CHANNEL, RF POWER, JFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MGF0906B		15			1 $22.49 10 $19.99 100 $18.49 1000 $18.49 10000 $18.49	Buy Now
Mitsubishi Electric MGF0904A01 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MGF0904A01		2,175			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric MGF0905A01 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MGF0905A01		816			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more MGF09 price and stock on Findchips.com

MGF09 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5687 general electric Abstract: mitsubishi 1183 MGF0912A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power	Original	mgf0912a 33dbm june/2004 5687 general electric +1mitsubishi 1183	PDF
MGF0916A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm	Original	mgf0916a 23dbm 100ma	PDF
mgf0911A Abstract: S 1149 212 41dBm Contextual Info: MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band amplifiers. Unit:millimeters 17.5 FEATURES 1 1.0 • Class A operation	Original	mgf0911a 41dbm gf-21 june/2004 +1s 1149 212	PDF
33dBm Abstract: MGF0912A CD4540 Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> MGF0912AI L & S BAND Ga As FET [ non - matched ] DESCRIPTION OUTLINE DRAWNG Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power	OCR Scan	mgf0912a 33dbm cd4540	PDF
MGF0920A Abstract: IM335 pt 11400 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm	Original	mgf0920a 32dbm 15dbm 400ma +450pcs t-155 im335 pt 11400	PDF
mitsubishi Abstract: MGF0904 MGF0904A mitsubishi electric Band Power GaAs FET Contextual Info: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0904A L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004	Original	june/2004 mgf0904a mitsubishi mgf0904 +2mitsubishi electric band power gaas fet	PDF
SCL 1058 Abstract: GP145 IDS800 MGF0915A fet GP145 3268 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm	Original	mgf0915a 23dbm 50pcs scl 1058 +4gp145 ids800 fet gp145 3268	PDF
VD F1 SMD Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm	Original	mgf0921a 33dbm 17dbm 500ma +250pcs vd f1 smd	PDF
F0904A Abstract: MGF0904A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0904A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 4 A . GaAs F E T w ith an N-channel s c h o ttk y U n it:m illim e te r s m c h e s l gate, is designed fo r use in U H F band am plifiers.	OCR Scan	mgf0904a 15dbm f0904a	PDF
MGF0915A Abstract: SCL 1058 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm	Original	mgf0915a 23dbm 50pcs scl 1058	PDF
SMD GP 113 Abstract: MGF0921A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm	Original	mgf0921a 33dbm 17dbm 500ma +250pcs smd gp 113	PDF
fet 1412 Abstract: mgf0911A Contextual Info: MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band amplifiers. Unit:millimeters 17.5 FEATURES 1 1.0 • Class A operation	Original	mgf0911a 41dbm gf-21 fet 1412	PDF
MGF0917A Abstract: gp 801 pt 11400 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm	Original	mgf0917a 24dbm 50pcs gp 801 +1pt 11400	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0905A L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 5 A , GaAs FET with an N-channel schottky U n it: m illim eters inches gate, is designed for use in U H F band amplifiers. FEATURES • High output power	OCR Scan	mgf0905a 34dbm 65ghz 26dbm	PDF

42AA Abstract: MGF0952P mgf09 Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P －－ Sample history:	Original	mgf0952p 25deg 1000pf 330uf +242aa mgf09	PDF
MGF0951P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P －－ Sample history:	Original	mgf0951p 35ghz 25deg	PDF
c id Abstract: 42AA MGF0952P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P －－ Sample history:	Original	mgf0952p 35ghz 25deg c id +142aa	PDF
12W SMD Contextual Info: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm	Original	mgf0951p 31dbm 15ghz 20dbm +2200ma 12w smd	PDF
RG1000 Contextual Info: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm	Original	mgf0953p 15ghz 10dbm rg1000	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3	Original	mgf0912a 33dbm	PDF
mgf0911A Contextual Info: < High-power GaAs FET small signal gain stage > MGF0911A L & S BAND / 12W non - matched DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation  High output power P1dB=41.0dBm(TYP.) @f=2.3GHz	Original	mgf0911a	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm	Original	mgf0919a 30dbm 12dbm 300ma +150pcs	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm	Original	mgf0913a 31dbm 18dbm 200ma +150pcs	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm	Original	mgf0951p 31dbm 15ghz 20dbm +1200ma	PDF

MGF09 Search Results

MGF09 Datasheets (51)

MGF09 Price and Stock

Mitsubishi Electric MGF0951P

Mitsubishi Electric MGF0907B-11

Panasonic Electronic Components MGF0906B

Mitsubishi Electric MGF0904A01

Mitsubishi Electric MGF0905A01

MGF09 Datasheets Context Search

5687 general electric

MGF0916A

mgf0911A

33dBm

MGF0920A

mitsubishi

SCL 1058

VD F1 SMD

F0904A

MGF0915A

SMD GP 113

fet 1412

MGF0917A

42AA

MGF0951P

c id

12W SMD

RG1000

mgf0911A