MGF0953P Search Results
MGF0953P Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MGF0953P | Mitsubishi | IC FET MISC 3PLASTIC MOLD LEAD-LESS PACKAGE | Scan | 211.92KB | 4 |
MGF0953P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RG1000Contextual Info: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm |
Original |
mgf0953p15ghz10dbmrg1000 | |
MGF0953PContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0953P L & S BAND GaAs FET Plastic Mold Lead-less PKG1 DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES •High output power Po = 28.0dBm TYP. @ f=2.15GHz,Pin=10dBm |
OCR Scan |
mgf0953p15ghz10dbm25deg | |
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Contextual Info: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm |
Original |
mgf0953p15ghz10dbm | |
|
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0953P L & S BAND GaAs FET fPlastic Mold Lead-less PKG1 DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES •High output power Po = 28.0dBm TYP. @f=2.15GHz,Pin=10dBm |
OCR Scan |
mgf0953p15ghz10dbm25deg | |
MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
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h-cx587-rki-1311mgf4937mgfg5h1503+8 | |
MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
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Original |
h-cr587-jki-0612mgfs45h2201gmgfs40h2201g+8 |