MGF0915A Search Results

SCL 1058

Abstract: GP145 IDS800 MGF0915A fet GP145 3268
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

MGF0915A

Abstract: SCL 1058
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

GP145

Abstract: MGF0915
Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power

60Ghz

Abstract: MGF0915A a4013
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

gp145dbf19ghz

Abstract: MGF0915A GP 0619 fet 2255
Contextual Info: 三菱半導体〈高周波デバイス〉 MGF0915A L & S帯高出力GaAs FET 概 要 M G F 09 1 5 A は U H F 帯 で の 増 幅 器 用 に 設 計 さ れ たN チ ャ ネ ル 外形図 単位:mm 0.80 Gate Mark Round corner GaAs FETです。

MGF0915A

Abstract: GP145 MGF0915 PQ-32/CTD-17765
Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=36.5 dBm TYP. @ f=1.9GHz,Pin=23dBm

MGF0915A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A － － Sample history:

idq06

Abstract: MGF0915A
Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A － － Sample history:

GP145

Abstract: MGF0915A PO36 MGF0915 fet GP145
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

MGF0915A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A － － Sample history:

MGF0915A

Abstract: idq06
Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A － －

MGF0915A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A － － Sample history:

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0915A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=1.9GHz,Pin=23dBm

9522K

Abstract: 9938 GM
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0915A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=1.9GHz,Pin=23dBm

MGF0915A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A － － Sample history:

smd 662

Abstract: MGF0915A 1084 fet smd
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

an 17830 A

Abstract: 4604 SMD 8 PIN RG-100-2 SEM 2006 0729 an 17830
Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @ f=1.9G Hz,Pin=23dBm

MGF4919G

Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety