35GHZ Search Results

Contextual Info: SPECIFICATIONS Constituent: RF Antenna Cable Assembly RF JUMPER CABLE ASSEMBLY MMCX TO SMA WITH 1.13 COAXIAL CABLE Electrical Application Range: 0~35GHz Impedance: 50 Ohms nominal VSWR: 1.5max Insertion Loss: 1.2dB DRAWING ORDERING I NF OR MATI ON `ORDERING I NF OR MATI ON

37GHz

Abstract: TGP2102
Contextual Info: Product Data Sheet August 5, 2008 35 GHz 5-Bit Phase Shifter TGP2102 Key Features and Performance • • • • • • • • Primary Applications • • Frequency Range: 32 - 37 GHz 7dB Nominal Insertion Loss 3.5deg RMS Phase Error @ 35GHz 0.4dB RMS Amp. Error @ 35GHz

TGA4040

Abstract: TGA4031-SM 5V amplifier
Contextual Info: Not Recommended for New Designs Advance Product Information December 11, 2006 17 - 35GHz MPA/Multiplier TGA4040SM TriQuint Recommends the TGA4030-SM or TGA4031-SM be used for New Designs Key Features • • • • • • Frequency: 17 - 35 GHz 22 dB Nominal Gain @ Mid-band

GRP1555C1H101JD01E

Contextual Info: Advance Product Information May 16, 2006 17 - 35GHz MPA/Multiplier TGA4040-SM Key Features • • • • • Frequency: 17 - 35 GHz 20 dB Nominal Gain @ Mid-band 18 dBm Nominal Output P1dB 2x and 3x Multiplier Function Package Dimensions: 5.0 x 5.0 x 1.1 mm

CHR2294

Contextual Info: CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip MFC which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable for

OC-768

Abstract: TGA4801 TGA4803 DC TO 20GHZ RF AMPLIFIER MMIC
Contextual Info: Advance Product Information May 21, 2007 DC-35GHz MPA with AGC TGA4801 OC-768 43Gb/s NRZ Lithium Niobate Modulator Driver Key Features and Performance • • • • • • • • 0.25um pHEMT Technology DC - 23GHz Linear BW DC - 35GHz Saturated Power BW

stacked transistors SOI RF

Abstract: TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ
Contextual Info: A Complementary Bipolar Technology on SOI Featuring 50GHz NPN and 35GHz PNP Devices for High Performance RF Applications S. Nigrin, M. C. Wilson, S. Thomas, S. Connor and P. H. Osborne Zarlink Semiconductor, Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.

ABD 630

Abstract: TGA4832
Contextual Info: Advance Product Information April 13, 2005 DC - 35 GHz Wideband Amplifier TGA4832 Key Features and Performance • • • • • • Frequency Range: DC to 35GHz Linear 40Gb/s Optical Modulator Driver 12dB Small Signal Gain 17 dBm Typical Output Power 4Vpp

CHR2294

Contextual Info: CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip MFC which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable for

ML4708

Abstract: IMPATT
Contextual Info: ML 400« SERIES SILICON SINGLE DRIFT IMPATT DIODES The M L 4700 Series o f single drift silicon im patt diodes are specifically designed for use as fundam ental frequency direct dc to RF conversion microwave oscillators and amplifiers in the frequency range 5-35GHz.

Contextual Info: CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip MFC which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image

Contextual Info: Product Data Sheet August 5, 2008 35 GHz 5-Bit Phase Shifter TGP2102 Key Features and Performance • • • • • • • • Primary Applications • • Frequency Range: 32 - 37 GHz 7dB Nominal Insertion Loss 3.5deg RMS Phase Error @ 35GHz 0.4dB RMS Amp. Error @ 35GHz

TGP2102-EPU

Contextual Info: Advance Product Information September 15, 2004 35 GHz 5-Bit Phase Shifter TGP2102-EPU Key Features and Performance • • • • • • • • Primary Applications • • Frequency Range: 32 - 37 GHz 7dB Nominal Insertion Loss 3.5deg RMS Phase Error @ 35GHz

CHR2294

Contextual Info: CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip MFC which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image

Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:

3A001

Abstract: Ka-band free circuit diagram of rf id
Contextual Info: TGA2575 Ka-Band 4 Watt Power Amplifier Applications • • Electronic warfare Communications Product Features • • • • • • • Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output

Contextual Info: Advance Product Information November 2, 2004 30-38 GHz Balanced Low Noise Amplifier TGA4511-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 Noise Figure dB 0.15 um pHEMT Technology

Arrayed Waveguide Grating

Abstract: BKM-51000 arrayed waveguide W300C DWDM AWG Arrayed waveguide 50
Contextual Info: ASOC Arrayed Waveguide Grating AWG Dense Wavelength Division Multiplexing (DWDM) Multiplexer/Demultiplexer BKM-51000 Family Features As the demand for capacity continues to grow, DWDM solutions provide a fast route to increasing bandwidth. The ASOC Arrayed Waveguide Grating (AWG) offers high

AP640R2-00

Contextual Info: GaAs MMIC SPDT PIN Switch 26-40 GHz Reflective AP640R2-00 Features • Broad Bandwidth, 26 - 40 GHz ■ Low Loss, < 1.1 dB ■ High Isolation, > 28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, < 2 ns ■ Low Power Consumption, < 25 mA Total at -5V ■ High Power Handling Capability, 37 dBm Peak,

zo 103 ma

Contextual Info: O K I electronic components KGF1531_ Small-Signal Amplifier fo r UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET sm all-signal dual-gate m ixer for L band frequencies that features low -voltage operation, low-current dissipation, high conversion gain,

Contextual Info: PBtttt G E C P L E S S E Y DC1823 PLANAR DOPED BARRIER Q BAND MICROSTRIP BEAM LEAD DETECTOR DIODE Planar Doped Barrier PDB diodes represent a major advancement in detector technology. These diodes offer very high tangential sensitivity, high compression point and very

Contextual Info: • 37bflSS2 QQ1ÔSQG flflT « P L S B GEC PLES S EY DC1820 Series PLANAR DOPED BARRIER MICROSTRIP BEAM LEAD MIXER DIODES Planar doped barrier PDB beam lead mixer diodes represent a major advancement in mixer/detector technology. These diodes offer good conversion loss at low local oscillator

6CL6A

Abstract: TBA+150A
Contextual Info: 37bôSSS 001B5QS 3b0 «PI-SB Si G E C P L E S S E Y S E M I C O N D U C T O R S DC1840 Series PLANAR DOPED BARRIER MICROSTRIP LID/MICROLID MIXER DIODES Planar doped barrier PDB LID/MICROLID mixer diodes represent a major advancement in mixer/detector technology.

Contextual Info: SDA-5000 SDA-5000 GaAs Distributed Amplifier Package: Die, 2.2mm x 1.45mm x 0.102mm RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a wide array of high frequency commercial, military, and space applications. They