34DBM Search Results

Teledyne Wireless

Contextual Info: Product Information ISO 9001 CERTIFIED 6001 5.150 to 5.300 GHz GaAs MMIC Hiperlan Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +23 dBm Output Power @1 dB Gain Compression 23 dB Minimum Small Signal Gain 34dBm Third Order Intercept Point Surface Mount, Thermally Optimum

DB35T

Abstract: mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

spf-5043

Abstract: SPF5043Z SPF 5043Z SPF5043 spf-5043z amplifier 900mhz
Contextual Info: Preliminary SPF-5043Z 500-2500 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5043Z is a fully matched ultra-low noise, high linearity MMIC LNA designed for 500-2500 MHz operation. It delivers 1.0dB noise figure and 34dBm OIP3 at 1900 MHz 5V,45mA . It is housed in an industry standard

5W 47 ohm

Contextual Info: 3.5 GHz InGaP HBT 5W Linear Power Amplifier CHV2711-QJ June 2006 - Rev 30-Jun-06 Features Internal Pre-matching Single Supply operation Power Gain 9.5dB Intermodulation Distortion -30dBc @ 34dBm per tone ESD Protection on board Current Control for multiple applications

walkie-talkie schematic

Contextual Info: RF6886 RF68863.6V, 100MHz to 1000 MHz Linear Power Amplifier 3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER Features  100MHz to 1000MHz  Single 3.6V Power Supply  34dBm OP1dB   36.5dBm Saturated Output Power >50% Efficiency 23 22 21 20 Vreg1

walkie-talkie schematic

Abstract: RF6886 RF6886PCK-411 450MHz CDMA Handset Circuit Diagram RF6886PCK-410 walkie-talkie main components walkie-talkie diagram walkie-talkie 900Mhz 433MHZ amplifier schematic RF6886SR
Contextual Info: RF6886 RF68863.6V, 100MHz to 1000 MHz Linear Power Amplifier 3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER Features  100MHz to 1000MHz  Single 3.6V Power Supply  34dBm OP1dB   36.5dBm Saturated Output Power >50% Efficiency 23 22 21 20 Vreg1

100C

Abstract: TGA1141
Contextual Info: Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ 1.5A Primary Applications • Military Radar Systems

NN12

Abstract: P35-4232-C06-200
Contextual Info: P35-4232-C06-200 GaAs MMIC 2W SPDT REFLECTIVE SWITCH, DC - 6GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Positive or negative voltage operation • High compression point; 34dBm typ

Contextual Info: Advance Product Information February 27, 2003 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat

Contextual Info: Advance Product Information August 26, 2002 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat

Contextual Info: RFSW6223 RFSW6223 F9999 DPDT SYMMETRIC SWITCH 10MHZ TO 6000MHZ NC NC V2 Package: QFN, 12-Pin, 3.0mmx3.0mm 9 8 7 Features Symmetric DPDT  Low Loss: 0.65dB 2GHz  Isolation: 33dB (2GHz)  High IP3: 56dBm  High P1dB: 34dBm at 3V  Positive Logic Control

VP 1176

Abstract: VP 1176 datasheet TGF4250-EEU TriQuint Semiconductor bvgs VP+1176
Contextual Info: Product Data Sheet March 16, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications

EUDYNA

Abstract: FRM5W232FY
Contextual Info: InGaAs-PIN/Preamp Receiver FRM5W232FY FEATURES • 5-pin coaxial ROSA Receiver Optical Subassembly with LC receptacle • InGaAs-PIN PD with 3.3V pre-amplfier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ.

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER T M D 1925-3 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pr e l i m i n a r y FEATURES n Suitable for Digital Communications n High Power P1dB=34dBm min @ 1.9 to 2.5GHz n Low Intermodulation Distortion n High Gain G1dB=27dB(min) @ 1.9 to 2.5GHz

TMD2121-3A

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD2121-3A TMD2121-3A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ Suitable for W-CDMA „ High Gain G1dB=27dB min „ High Power P1dB=34dBm(min) „ Low Intermodulation Distortion ABSOLUTE MAXIMUM RATINGS ( Ta= 25°°C )

CGY 8 pin

Abstract: 81541
Contextual Info: SIEMENS CGY 0918 GaAs MMIC • • • • Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

FPD750SOT89

Contextual Info: EB750SOT89BB FPD750SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 23.5dBm Output Power • 23dB Gain ¥ 0.6dB Noise Figure ¥ 34dBm OIP3 measured at 10dBm per tone ¥ Bias Vd = 5V, Id = 100mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

TMD5872-2

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD5872-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES n High Power P1dB=34dBm TYP. n High Gain G1dB=28dB(TYP.) n High Power Added Efficiency ηadd=21%(TYP.) n Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25oC)

walkie-talkie schematic

Abstract: RF6886 RF6886PCK-410 RF6886PCK-411 450MHz CDMA Handset Circuit Diagram walkie-talkie circuit walkie-talkie main components walkie-talkie 900Mhz RF68863 3000mA power bank
Contextual Info: RF6886 RF68863.6V, 100MHz to 1000MHz Linear Power Amplifier 3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER Features Vcc 100MHz to 1000MHz  Single 3.6V Power Supply  34dBm OP1dB  Vreg1 22 21 20 19 1 18 RFout Bias   23 NC 24 NC VBias Pwr Ref Package: QFN, 24-Pin, 4mmx4mm

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367589 123456367589 RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

frm5w23

Contextual Info: InGaAs-APD/Preamp Receiver FRM5W232HZ FEATURES • InGaAs-APD with 3.3V pre-amplifier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ. • 5-pin coaxial package • Operating Case Temperature: -40°C to 85°C

InGaAs apd photodiode

Abstract: EUDYNA FRM5W232HZ
Contextual Info: InGaAs-APD/Preamp Receiver FRM5W232HZ FEATURES • InGaAs-APD with 3.3V pre-amplifier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ. • 5-pin coaxial package • Operating Case Temperature: -40°C to 85°C

DBC3

Contextual Info: 2nd 3rd Harmonic vs. Pout MAX3509 65MHz 2:1 Pin=34dBmV 70 65 60 dBc 55 dbc2 dbc3 50 45 40 35 30 57 59 61 63 65 Pout dBc 67 69 71

JAN 6418

Abstract: CHA5350-99F
Contextual Info: CHA5350-99F 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5350-99F is a four stage monolithic MPA that typically provides an output power of 26.5dBm at 1dB gain compression associated to a high IP3 output of 34dBm. It is designed for a wide range of