BVGS Search Results

Contextual Info: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)

UC754

Abstract: UC758
Contextual Info: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max

Contextual Info: F4 9-97 Small O utline Surface M ount Package Devices N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BVgsS Device Type >GSS VgS(OFF) Limits Conditions Min Max Vos to Min Max @Vds (mA) (mA) (V) Min @Ig Max @VGS (V) (UA) (nA) (V) SMP 4340 SMP4341 SMP 4391

MMBFJ174

Abstract: P1087 MMBF5115 2N5019 J176 2N5018 2N5115 2N5116 J174 MMBF5114
Contextual Info: bflE D N ATL tSD1130 003^501 TDS • NSCS SE„ IC0N] JIS C r e t e ) P C hannel Vp@VDSlD RoS(on) ( a ) @ iD bvgss Device (V) (V) Min Min Ciss (PF) Max Crss (PF) Max ton (ns) Max toff (ns) Max Package (V) (nA) Min (mA) 10 -1 5 1000 75 1 45 10 35 65 T 0 -18(11)

2N4117A NATIONAL SEMICONDUCTOR

Abstract: National Semiconductor Discrete catalog PN4117A MMBF4119 2N4117A 2N4118 2N4118A MMBF4117 MMBF4118 NATIONAL SEMICONDUCTOR TO-92
Contextual Info: bflE D • b S 0 1 1 3 0 □ □ 3 ciS0M 714 « N S C S JFET Ultra Low Input Current Amplifiers NATL S E M I C O N D D IS CR ET E N Channel V p @ V DS lD Device MMBF4117 BVgss (V) Min 40 % IfiSS (lunho) (V) <P*) Max (V) Min Max 10 0.6 2.8 10 2.8 10 (nA)

Contextual Info: JFETs & Discrete POWER & Signal Technologies National Semiconductor" N-Channel JFETs Low Frequency - Low Noise Amplifiers Device No. PF5101 PF5102 PF5103 PN4393 Case Style TO-92 TO-92 TO-92 TO-92 BVGSS GS off *GSS (V) @ VDS (nA)@ VDG (V) Min Max (V) (nA)

2n5248

Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Contextual Info: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640

Contextual Info: J-FET SURFACE MOUNT JUNCTIO N FIELD EFFECT TRANSISTORS - N PACKAGE 3 PIN H SOT CERAMIC VGS OFF min max V V CHANNEL CISS pf bvGSS VOLTS •g s s max nA SLC3821 50 0.1 4.0 15/0.5 SLC3822 50 0.1 6.0 15/0.5 - 7.0 SLC3823 30 0.5 8.0 15/0.5 - 7.0 SLC4391 40 1.0

PJ32

Abstract: nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page E-2 E-2 01/99 Small Outline Surface Mount Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS IGSS VGS (OFF) Limits Min Max (V) (V) IDSS Conditions VDS ID (V) (nA) Min (V) @IG (µA) Max

2N3819 equivalent

Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30

SOTKS210

Abstract: FN22 FN39.8 DSASW0036854 fn222
Contextual Info: Vgs BVgss Ciss Crss Type Case off Geometry Min Max Max Number Style Min (V) (pF) (pF) (V) SOTKS3684 FN22.2 50 4 1.2 2.0 23 SOTKS3684A FN22.2 50 4 1.2 2.0 23 SOTKS3685 FN22.2 50 4 1.2 1.0 23 SOTKS3685A FN22.2 50 4 1.2 1.0 23 SOTKS3686 FN22.2 50 4 1.2 0.6

2n5248

Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE

UNION CARBIDE

Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389

"DUAL N-Channel JFET"

Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71

Contextual Info: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk

MMBFJ174

Abstract: MMBF5115 p1086 MMBFJ177
Contextual Info: h&E D • b 5 D 1 1 3 D □OB'lSDl TDS ■ NSC5 P Channel V p @ V DSlD Device R BVgss V Min (V) (V) Min Max m d S( oii ) (ß ) Min @ ID Ciss Crss ton toff (PF) Max (PF) Max (ns) Max (ns) Package Max (mA) 2N5018 30 10 -15 1000 75 1 45 10 35 65 TO-18(11 )

amelco

Abstract: LSK389B
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE Top View TO-71 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389

Contextual Info: N - Channel Junction Field Effect Transistors SWITCHING/CHOPPING MAXIMUM RATINGS TYPE NO. Pd VGS ofl (mA) (V) BVGSS (mW) (V) min max rds(on) Ciss Crss ton toff (ohms) (PF) (PF) (bs) (ns) min IMI m ar max max max IMI 3 0.5 0.5 4 10 5 3 10 6 30 50 100 100 220

2N5521

Abstract: 2N5562 2N5563
Contextual Info: [PMEHUKgTT ÄTTÄ[L LO W P O W E R FIELD EFFECT T R A N S IS T O R S Case Style Typ« Number (TO - Geometry BVgss Min (V) Ciss Max (pF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 2N3921 2N3922 2N3954 2N3954A 2N3955 71 71 71 71 71 FN3.6

Contextual Info: [p[^ Q [M TF ©ÆfiT£\[L ( L O W P O W E R F IE L D E FFEC T T R A N S IS T O R S MILTim mw Type Number Case Style (T O -) 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A 72 72 72 72 72 72 [LiAKMli NMg&MIMIIL [Fif^ Geometry BVgss Min (V) Ciss Max (pF) Crss

U1898

Contextual Info: F8 9-97 Small Outline Surface Mount Package Devices N ^H A N N E rsÌLÌcO N T Ù N C T ÌO N T ÌE L D -E F F E C T TRANSISTORS Id s s V g s (O FF ) •g s s BVGSS Device Type Conditions Limits Min @IG Max @Vqs Min Max VDS M m (nA) (V) (V) (V) (V) Id (nA)

P1086

Contextual Info: 9-97 F 10 Small Outline Surface Mount Package Devices P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Device Type VGS(OFF) I gss bvgss Max Min @IG (V) (mA) (nA) @Vgs (V) Min toss Conditions lim its Max Vos Id Min Max @VDS (nA) (mA) (mA) (V) (V) (V) (V)

2N5458

Abstract: 2N5458 NATIONAL SEMICONDUCTOR
Contextual Info: This Material [T f Copyrighted aa jr □ -C 03 ru By D O' Discrete POWER & Signal Technologies Natio nal Ln Q fcJ i Semiconductor' N-Channel JFETs General Purpose Amplifiers Device No. Case Style BVGSS V 'gss Its Respective Manufacturer V e iG ("A )@ vdg

2N4447

Abstract: 2N4446 2N4445 2N4448 2N5432 2N5433 2N5434 SDF1001 SDF1002 SDF1003
Contextual Info: Igss *BVDgo Vgs Vgs Case Ciss Crss Idss Idss or R on or (off) (off) Type Style Geometry Max Max Min Max *Idgo Max BVgss Min Max Number (pF) (pF) (v) (v) Max (ohms) (TO) Min (V) (V) (V) (nA) 2N4445 46 FN9.1/FN9 25 35 20 2.0 10.0 150 3.0 5.0 2N4446 46 FN9.1/FN9