MGF0916A Search Results

MGF0916A Datasheets (3)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGF0916A		Mitsubishi	TRANS JFET N-CH 6V 250MA 3HERMETIC	Original	PDF	44.37KB	4
MGF0916A		Mitsubishi	L & S BAND GaAs FET	Original	PDF	89.66KB	3
MGF0916A		Mitsubishi	L & S BAND GaAs FET	Original	PDF	324.64KB	5

MGF0916A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGF0916A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm	Original	mgf0916a 23dbm 100ma	PDF
M 14606 SMD Abstract: A 3120 v 0816 Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION T he M G F 0 9 1 6 A G aA s F E T w ith an N -ch an nel sch to kky G ate, is d e sig n e d fo r use U H F band am plifiers. FEATURES • High ou tput po w e r	OCR Scan	mgf0916a m 14606 smd a 3120 v 0816	PDF
FET K 1358 Abstract: 9452 smd MGF0916A fet smd 2657 FET Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm	Original	mgf0916a 23dbm 100ma 50pcs +5june/2004 fet k 1358 9452 smd fet smd 2657 fet	PDF
ADD30 Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power	OCR Scan	mgf0916a 23dbm 100ma add30	PDF
FET K 1358 Abstract: MGF0916A gp 752 9452 smd Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm	Original	mgf0916a 23dbm 100ma 50pcs +3fet k 1358 gp 752 9452 smd	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm	Original	mgf0916a 23dbm 100ma 50pcs	PDF
MGF0916A Abstract: 094-3 MAG Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=23dBm TYP. @ f=1.9GHz,Pin=5dBm	OCR Scan	mgf0916a 23dbm 100ma 094-3 mag	PDF
9452 smd Contextual Info: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm	Original	mgf0916a 23dbm 100ma 50pcs +19452 smd	PDF
ta 9690 Abstract: MGF0916A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm	Original	mgf0916a 23dbm 100ma ta 9690	PDF
uhf 1kw amplifier Abstract: MGF0916A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES	Original	mgf0916a 23dbm 100ma uhf 1kw amplifier	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	m6sta-005va/wa/sa mf-156sta-006va/wa/sa mf-156sra-002va/wa/sa mf-622sta-004va/wa/sa +16mf-622sta-005va/wa/sa mf-622sta-006va/wa/sa mf-622sra-002va/wa/sa mf-2500sta-002va/wa 003va/wa 004va/wa c42v5964 mgf1302 transistor mgf1601 mgfc1402 m57721 m67760lc h2 marking sot-89 mmic 2sc5125 mitsubishi m57710-a m68776	PDF