MGF0912A Search Results

MGF0912A Datasheets (1)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGF0912A		Mitsubishi		Scan	PDF	97.53KB	2

MGF0912A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5687 general electric Abstract: mitsubishi 1183 MGF0912A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power	Original	mgf0912a 33dbm june/2004 5687 general electric +1mitsubishi 1183	PDF
33dBm Abstract: MGF0912A CD4540 Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> MGF0912AI L & S BAND Ga As FET [ non - matched ] DESCRIPTION OUTLINE DRAWNG Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power	OCR Scan	mgf0912a 33dbm cd4540	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3	Original	mgf0912a 33dbm	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN	Original	mgf0912a 33dbm	PDF