MGF0913A Search Results

MGF0913A Datasheets (3)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGF0913A		Mitsubishi	TRANS JFET N-CH 10V 800MA 3HERMETIC	Original	PDF	45.11KB	4
MGF0913A		Mitsubishi	L & S BAND GaAs FET	Original	PDF	325.36KB	5
MGF0913A		Mitsubishi	L & S BAND GaAs FET	Original	PDF	90.93KB	3

MGF0913A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm	Original	mgf0913a 31dbm 18dbm 200ma +150pcs	PDF
MGF0913A Contextual Info: / \ MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm TYP. @ f=1.9GHz,Pin=18dBm	OCR Scan	mgf0913a 31dbm 18dbm 200ma	PDF
MGF0913A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm	Original	mgf0913a 31dbm 18dbm 200ma	PDF
MGF0913A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm	Original	mgf0913a 31dbm 18dbm 200ma +150pcs	PDF
MGF0913A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm	Original	mgf0913a 31dbm 18dbm 200ma +250pcs june/2004	PDF
MGF0913A Abstract: mmz12 Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR : 2 nd Mar 2007 Date SUBJECT: RF Characteristic of MGF0913A in 800 to 900 MHz-band SUMMARY: This application note shows RF characteristics of MGF0913A Measurement conditions are as follows : Modulated signal; W - CDMA 3GPP TEST MODEL1 64ch's 1carrier	Original	mgf0913a ccl-870hl mmz12	PDF
MGF0913A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm	Original	mgf0913a 31dbm 18dbm 200ma	PDF
12W SMD Abstract: MGF0913A smd GP 928 Contextual Info: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm	Original	mgf0913a 31dbm 18dbm 200ma +450pcs -65ctric 12w smd smd gp 928	PDF
s3v 8d Abstract: cm 3593 Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31 dBm TYP. @ f=1,9GHz,Pin=18dBm	OCR Scan	mgf0913a 18dbm s3v 8d cm 3593	PDF
MGF0913A Abstract: 1709-1 Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES	OCR Scan	mgf0913a 31dbm 18dbm 200ma +11709-1	PDF
MGF0913A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES	Original	mgf0913a 31dbm 18dbm 200ma +2unit39 50ohm	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	m6sta-005va/wa/sa mf-156sta-006va/wa/sa mf-156sra-002va/wa/sa mf-622sta-004va/wa/sa +16mf-622sta-005va/wa/sa mf-622sta-006va/wa/sa mf-622sra-002va/wa/sa mf-2500sta-002va/wa 003va/wa 004va/wa c42v5964 mgf1302 transistor mgf1601 mgfc1402 m57721 m67760lc h2 marking sot-89 mmic 2sc5125 mitsubishi m57710-a m68776	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	h-cx587-r ki-1311 mgf4937 mgfg5h1503 +8mgf4937am gd-32 mgfg5h1502 mgf0904 mgfc39v5964 mgf2430 mgf0909a ba012j1	PDF
MGFS45H2201G Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety	Original	h-cr587-j ki-0612 mgfs45h2201g mgfs40h2201g +8mgf0909a sirio mgfc36v-a qvc12 mgf1907a mgf4961 mgf4941al mitsubishi mgf	PDF