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    MITSUBISHI Search Results

    MITSUBISHI Datasheets (500)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    0202KSS
    Mitsubishi FREQUENCT INVERTER Original PDF 3.22MB 209
    1951A
    Mitsubishi Medium Power Microwave MESFET Original PDF 29.76KB 4
    21265-P/AP
    Mitsubishi AC100V~200V three-phase inverter drive for small power motor control. Original PDF 178.22KB 10
    28P2C-A
    Mitsubishi Plastic 28pin 8 5 13.4mm TSOP Original PDF 18.3KB 1
    28P2C-B
    Mitsubishi Plastic 28pin 8 5 13.4mm TSOP Original PDF 18.54KB 1
    28P2W-C
    Mitsubishi Plastic 28pin 450mil SOP Original PDF 18.62KB 1
    28P4
    Mitsubishi Plastic 28pin 600mil DIP Original PDF 15.83KB 1
    2SA1364
    Mitsubishi PNP Transistor Scan PDF 39.18KB 1
    2SA1365
    Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF 126.91KB 3
    2SA1365AE
    Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF 126.91KB 3
    2SA1365AF
    Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF 126.91KB 3
    2SA1365AG
    Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF 126.91KB 3
    2SA1602A
    Mitsubishi TRANS GP BJT PNP 50V 0.2A 3SC-70 Original PDF 350.46KB 4
    2SA1602AE
    Mitsubishi TRANS GP BJT PNP 50V 0.2A 3SC-70 Original PDF 350.46KB 4
    2SA1602AF
    Mitsubishi TRANS GP BJT PNP 50V 0.2A 3SC-70 Original PDF 350.46KB 4
    2SB524
    Mitsubishi PNP Transistor Scan PDF 40.02KB 1
    2SB529
    Mitsubishi PNP Transistor Scan PDF 37.89KB 1
    2SC11968A
    Mitsubishi NPN EPITAIAL PLANAR TYPE Scan PDF 127.64KB 3
    2SC1324
    Mitsubishi MITSUBISHI RF POWER TRANSISTOR Scan PDF 148.31KB 4
    2SC1324
    Mitsubishi NPN EPITAXIAL PLANAR TYPE Scan PDF 148.3KB 4
    ...
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    MITSUBISHI Price and Stock

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    BBM Battery MITSUBISHI-Q-BATTERY

    BATT MITSUBISHI 3.6V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MITSUBISHI-Q-BATTERY Ammo Pack 1
    • 1 $16.95
    • 10 $14.95
    • 100 $13.50
    • 1000 $13.50
    • 10000 $13.50
    Buy Now

    BBM Battery MITSUBISHI-ANS-BATTERY

    BATT MITSUBISHI 3.6V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MITSUBISHI-ANS-BATTERY Ammo Pack 1
    • 1 $16.95
    • 10 $14.95
    • 100 $13.50
    • 1000 $13.50
    • 10000 $13.50
    Buy Now

    Middle Atlantic Products RSH-4A-MITSUBISHI-HSU776

    OEMs, CMs ONLY (NO BROKERS)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com RSH-4A-MITSUBISHI-HSU776
    • 1 $112.81
    • 10 $99.30
    • 100 $99.30
    • 1000 $99.30
    • 10000 $99.30
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    Panasonic Electronic Components EYG-S0612ZLWF

    Thermal Interface Products Soft PGS - IGBT Mod Mitsubishi Elec.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI EYG-S0612ZLWF Bulk 90 30
    • 1 -
    • 10 -
    • 100 $7.37
    • 1000 $6.62
    • 10000 $6.62
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    Panasonic Electronic Components EYG-S0611ZLWH

    Thermal Interface Products Soft PGS - IGBT Mod Mitsubishi Elec.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI EYG-S0611ZLWH Bulk 30 30
    • 1 -
    • 10 -
    • 100 $7.41
    • 1000 $4.95
    • 10000 $4.85
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    MITSUBISHI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CM100MX

    Contextual Info: MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE CM100MX-12A ¡IC . 100A ¡VCES . 600V ¡CIB 3-phase Converter + 3-phase Inverter + Brake


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    CM100MX-12A CM100MX PDF

    Vn36

    Abstract: CM100RX-24A
    Contextual Info: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake


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    CM100RX-24A 48K/W Vn36 CM100RX-24A PDF

    MGFX36V0717

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFX36V0717 10.7 ~ 11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


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    MGFX36V0717 MGFX36V0717 PDF

    CM100TL-12NF

    Abstract: B8P-VH
    Contextual Info: MITSUBISHI IGBT MODULES CM100TL-12NF HIGH POWER SWITCHING USE CM100TL-12NF ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡6-elements in a pack


    Original
    CM100TL-12NF CM100TL-12NF B8P-VH PDF

    CM900DU-24NF

    Contextual Info: MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE CM900DU-24NF ● IC . 900A ● VCES . 1200V ● Insulated Type ● 2-elements in a pack


    Original
    CM900DU-24NF CM900DU-24NF PDF

    2SK2973

    Abstract: hd 9729 75458 151821 45980 marking 668 transistor t 2190 transistor marking 551 sot-89 marking c7 sot-89 12089
    Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm 4.6MAX VHF/UHF power amplifiers applications. 1.5±0.1 1.6±0.2 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm


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    2SK2973 2SK2973 Gpe13dB 450MHz 17dBm OT-89 48MAX OT-89 hd 9729 75458 151821 45980 marking 668 transistor t 2190 transistor marking 551 sot-89 marking c7 sot-89 12089 PDF

    TH-34

    Contextual Info: MITSUBISHI IGBT MODULES CM400HX-24A HIGH POWER SWITCHING USE CM400HX-24A ¡IC . 400A ¡VCES . 1200V ¡Single ¡Flatbase Type / Insulated Package /


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    CM400HX-24A 051K/W 093K/W TH-34 PDF

    019K

    Abstract: CM400DY-12NF
    Contextual Info: MITSUBISHI IGBT MODULES CM400DY-12NF HIGH POWER SWITCHING USE CM400DY-12NF ¡IC . 400A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack


    Original
    CM400DY-12NF 11K/W 19K/W 019K CM400DY-12NF PDF

    CM300DU-24F

    Contextual Info: MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE CM300DU-24F ● IC . 300A ● VCES . 1200V ● Insulated Type ● 2-elements in a pack


    Original
    CM300DU-24F 13K/W 18K/W CM300DU-24F PDF

    CM600HX-24A

    Contextual Info: MITSUBISHI IGBT MODULES CM600HX-24A HIGH POWER SWITCHING USE CM600HX-24A ¡IC . 600A ¡VCES . 1200V ¡Single ¡Flatbase Type / Insulated Package /


    Original
    CM600HX-24A 033K/W 048K/W CM600HX-24A PDF

    CM300DY-34A

    Contextual Info: MITSUBISHI IGBT MODULES CM300DY-34A HIGH POWER SWITCHING USE CM300DY-34A ¡IC . 300A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original
    CM300DY-34A 200GE 043K/W CM300DY-34A PDF

    ra01l8693ma

    Abstract: RF MOSFET MODULE ra MITSUBISHI marking example
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original
    RA01L8693MA 865-928MHz RA01L8693MA RF MOSFET MODULE ra MITSUBISHI marking example PDF

    CM200DY-24NF

    Contextual Info: MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE CM200DY-24NF ¡IC . 200A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack


    Original
    CM200DY-24NF 11K/W 19K/W CM200DY-24NF PDF

    CM600DY-24A

    Abstract: snubber resistance of IGBT
    Contextual Info: MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE CM600DY-24A ¡IC . 600A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack


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    CM600DY-24A CM600DY-24A snubber resistance of IGBT PDF

    CM75DY-34A

    Contextual Info: MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE CM75DY-34A ¡IC . 75A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


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    CM75DY-34A 16K/W CM75DY-34A PDF

    ra33h1516m1

    Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


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    RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene PDF

    GD-30

    Abstract: InGaAs HEMT mitsubishi
    Contextual Info: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


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    May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi PDF

    CM200DX-24A

    Contextual Info: MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE CM200DX-24A ¡IC . 200A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /


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    CM200DX-24A 10K/W 19K/W CM200DX-24A PDF

    transistor 9527

    Abstract: 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original
    RA01L9595M 952-954MHz RA01L9595M transistor 9527 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams PDF

    l g washing machine circuit diagram

    Abstract: M81709FP 16P2N H- bridge mosfet circuit
    Contextual Info: MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81709FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


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    M81709FP M81709FP OP-16 16P2N-A 16pin 300mil OP16-P-300-1 l g washing machine circuit diagram 16P2N H- bridge mosfet circuit PDF

    controler

    Abstract: CM600DU-24F
    Contextual Info: MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE CM600DU-24F ● IC . 600A ● VCES . 1200V ● Insulated Type ● 2-elements in a pack


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    CM600DU-24F 081K/W 11K/W controler CM600DU-24F PDF

    GD-30

    Abstract: MGF4931AM 77153
    Contextual Info: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


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    May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153 PDF

    RA55H4452M

    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original
    RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz PDF

    MGF1402B

    Abstract: MGF1402
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC


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    MGF1402B MGF1402B MGF1402 PDF