32DBM Search Results

driver photodiode rx

Abstract: driver photodiode tia PHY1095 1.25G ROSA optical pickup unit connections PHY1095-01DS-WR PHY1095-01DS-FR PHY1095-01 pdc1
Contextual Info: 19-5689; Rev 1/11 PHY1095-01 A Maxim Integrated Products Brand 1.25Gbps High Sensitivity Transimpedance Amplifier Features Description -32dBm Sensitivity Up to 1.25Gbps NRZ data rates 60nA rms typical input referred noise Automatic gain control Flexible bond pad layout and output signal

RF2045

Abstract: NE AND micro-X
Contextual Info: RF2045 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic GND 4 Features „ „ „ „ MARKING - C5 SI GN S „ DC to 6000MHz Operation Internally matched Input and Output 14dB Small Signal Gain +32dBm Output IP3

p1d AM

Abstract: RW mmic
Contextual Info: SMM-180 1.4-2.0 GHz, 1.5 Watt G aA s M M IC Amplifier Aprfl, 1995 Features - 25dB Gain with +/- 0.5dB Flatness - +32dBm Output Power at P1dB - 20% Power Added Efficiency - +41 dBm Output TOIP - CopperfTungsten Package Description Stanford Microdevices' SM M -180 is a high performance

Contextual Info: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz

Contextual Info: TOSHIBA MICROW AVE PO W ER MICROWAVE' SEMICONDUCTOR GaAs FET JS8855-AS TECHNICAL DATA FEATURES: • HIGH POWER PldB = 32dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN GjdB = 7dB at f = 15 GHz ■ ION IMPLANTATION RF P E R F O R M A N C E

MGF0920A

Abstract: IM335 pt 11400
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm

B 1403 N

Abstract: EFM-1900 27 66 77 9
Contextual Info: EFM-1900 E-Series Surface Mount Mixer 1850 – 1980 MHz Features • • • • • LO Power +13 dBm +22dB Compression Point Surface Mount +32dBm IIP3 Up and Down converting SM-106 Package Note: Non Hermetic Package,Metal Cover. 0.800 20.32 2 Description

CHA6042

Contextual Info: CHA6042 13–16GHz High Power Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA6042 is a four-stage pHEMT HPA MMIC designed for VSAT ground terminals and other radio applications. The CHA6042 provides 32dBm nominal output power at 1dB gain compression over the 13-16GHz

FLM4450-25D

Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
Contextual Info: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

ku vsat amplifier

Abstract: CMQ1431-QH CMQ1432-QH CMQ1432-QH-0G00 CMQ1432-QH-0G0T CMQ1631-QH PB-CMQ1631-QH-0000 Mimix Broadband 16gHz
Contextual Info: 13.5-15.5 GHz 1.5W QFN Plastic Packaged Power Amplifier May 2006 - Rev 23-May-06 CMQ1432-QH Features 32dBm Typ Saturated Output Power 32dB (Typ) Linear Gain ESD Protection On Die Unconditionally Stable Low Cost, Surfae Mount Package 4x4x1.4 mm RoHS Compliant

PHY1095

Contextual Info: 19-5689; Rev 1/11 PHY1095-01 A Maxim Integrated Products Brand 1.25Gbps High Sensitivity Transimpedance Amplifier Features Description • • • • • -32dBm Sensitivity Up to 1.25Gbps NRZ data rates 60nA rms typical input referred noise Automatic gain control

photodiode preamplifier AGC

Abstract: db opera 415 Triode 805 transistor d 5702 MC2009 MC2009DIE MC2009DIEW MC2009M10 MSOP10 transistor AC 307
Contextual Info: MC2009 Pin Pre-amplifier with AGC for 3.3V Fibre-Optics Applications to 622Mbps q q q q q q q q q F EATURES D ESCRIPTION Low cost IC Fabricated in advanced sub-mi cron pure-CMOS process. Receiver sensitivity better than -32dBm @ 622Mbs. Minimum 415MHz bandwidth and multi-pole

MGF0920A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm

Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0920A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=32dBm TYP. @ f=1,9GHz,Pin=15dBm

MGF0920A

Abstract: n channel fet k 1118
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm

XM0860

Abstract: XM08 MURATA GRM155 GRM155
Contextual Info: PRELIMINARY DATA SHEET XM0860ST-DL1201 DS0860ST-01A GaAs IC High Power SPDT Switch  Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications.  Features • Positive Voltage Control • Pin0.5dB @+2.6V .32dBm typ. @ 2GHz

Contextual Info: E-pHEMT AE608 Product Features Application • 10 ~ 4000MHz • GaAs E-pHEMT • 0.7dB Noise Figure • 32dBm Output IP3 • 14dB Gain at 1900MHz • 14dBm P1 dB • SOT-143 Package • Single Supply Voltage • Pb Free / RoHS Standard • HF-Band, Cellular, CDMA, W-CDMA,

Contextual Info: E-pHEMT AE608 Product Features Application • 10 ~ 4000MHz • GaAs E-pHEMT • 0.7dB Noise Figure • 32dBm Output IP3 • 14dB Gain at 1900MHz • 14dBm P1 dB • SOT-143 Package • Single Supply Voltage • Pb Free / RoHS Standard • HF-Band, Cellular, CDMA, W-CDMA,

Contextual Info: Advance Product Information September 21, 2005 2W Q-Band High Power Amplifier TGA4046 Key Features • • • • • • • Typical Frequency Range: 41 - 46 GHz Typical 33dBm Psat, 32dBm P1dB 17 dB Nominal Gain 16 dB Nominal Return Loss Bias: 6 V, 2 A 0.15 um 3MI pHEMT Technology

RX77R2A-P2000

Abstract: RX77R2A-P4000 RX77R2A-P5000 RX77R2A-P6000 apd 2.5 g 1550nm ingaas apd photodetector
Contextual Info: 1 Technical Data Sheet August 2001 OPTOELECTRONICS DIVISION RX77R2A 2.5 Gbps Receiver Module with Clock Recovery Features ¾ Multisource agreement MSA compatible ¾ Typical sensitivity - APD : -32dBm(mini-DIL)/ -30dBm(coaxial) - PIN : -23dBm(mini-DIL)/ -21dBm(coaxial)

2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM DC TO 18GHZ RF AMPLIFIER MMIC CMM1631-SM CMM1631-SM-0000 CMM1631-SM-000T PB-CMM1631-SM-0000
Contextual Info: 16.0-18.0 GHz 1.5-Watt Power Amplifier May 2006 - Rev 24-May-06 CMM1631-SM Features 32dBm Typ. Saturated output power 26dB (Typ) Linear Gain Fully Matched Unconditionally Stable Low Cost, Surface Mount Package 6mmX6mmX1.6mm Optimum Thermal Dissipation 7V, 770mA

Contextual Info: Advance Product Information October 21, 2004 2W Q-Band High Power Amplifier TGA4046-EPU Key Features • • • • • • • Typical Frequency Range: 41 - 46 GHz Typical 33dBm Psat, 32dBm P1dB 17 dB Nominal Gain 16 dB Nominal Return Loss Bias: 6 V, 2 A

Contextual Info: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q

EFM-2100

Contextual Info: E-Series Surface Mount Mixer 2110-2170 MHz Functional Schematic Features • • • • • LO Power +13 dBm +22dB compression Point Surface Mount +32dBm IIP3 Up and Down Converting Description M/A Com's EFM-2100 uses a novel, patent pending design to achieve very high linearity at low LO drive levels. Typically IP3