UJ11BU Search Results

Contextual Info: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: F| .9?T<-. FMC2223P1-02 r UJ11bU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-|<jB = 21dBm Typ. High Gain: G-ih r = 12dB(Typ.) Low In/Out VSWR Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: FLM3742-8E m frT C II r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FMC2223LN-03 r UJ11bU Ku, K-Band Power GaAs Modules FEATURES • High Output Power: P-|<jB = 12dBm Typ. • High Gain: G-ih r = 12dB(Typ.) • Low In/Out VSWR • Low Noise: NF = 3.0dB (Typ.) • Broad Band: 22.4 ~ 23.6GHz • Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM1213-8C m in a li Internally Matched Power GaAs FETs FEATURES • High Output Power: F3id B = 38-5dBm Typ) • High Gain: = 5 ,5dB (Typ.) • High PAE: riadc| = 23 % (Typ.) • Broad Band: 1 2 . 7 - 1 3.2GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

Contextual Info: FLM6472-6D r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: r iadd = 34% (Typ.) Low IM 3 = -45dBc@Po = 27dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

FLM09I0-2

Contextual Info: FLM0910-2 FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

FLM5359-4C

Contextual Info: F, , FLM5359-4C J Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 33% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM0910-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed

Contextual Info: FLM7785-8C P lim x ril r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 27% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q

FLM7177-12DA

Contextual Info: FLM7177-12DA r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q