MGF0919A Search Results

MGF0919A Datasheets (3)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGF0919A		Mitsubishi	TRANS JFET N-CH 10V 800MA 3HERMETIC	Original	PDF	292.45KB	12
MGF0919A		Mitsubishi	L & S BAND GaAs FET [ SMD non matched ]	Original	PDF	43.99KB	4
MGF0919A		Mitsubishi	L & S BAND GaAs FET	Original	PDF	88.07KB	3

MGF0919A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm	Original	mgf0919a 30dbm 12dbm 300ma +150pcs	PDF
4977 gm Abstract: MGF0919A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm	Original	mgf0919a 30dbm 12dbm 300ma +14977 gm	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0919A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=30dBm TYP. @ f=1,9GHz,Pin=12dBm	OCR Scan	mgf0919a 30dbm 12dbm 300ma +1voltage154	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm	Original	mgf0919a 30dbm 12dbm 300ma +150pcs	PDF
MGF0919A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm	Original	mgf0919a 30dbm 12dbm 300ma +250pcs june/2004	PDF
4977 gm Abstract: Diode GP 514 MGF0919A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm	Original	mgf0919a 30dbm 12dbm 300ma +3gat87 4977 gm diode gp 514	PDF
MGF0919A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm	Original	mgf0919a 30dbm 12dbm 300ma +150pcs	PDF
MGF0919A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm	Original	mgf0919a 30dbm 12dbm 300ma +150pcs	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	m6sta-005va/wa/sa mf-156sta-006va/wa/sa mf-156sra-002va/wa/sa mf-622sta-004va/wa/sa +16mf-622sta-005va/wa/sa mf-622sta-006va/wa/sa mf-622sra-002va/wa/sa mf-2500sta-002va/wa 003va/wa 004va/wa c42v5964 mgf1302 transistor mgf1601 mgfc1402 m57721 m67760lc h2 marking sot-89 mmic 2sc5125 mitsubishi m57710-a m68776	PDF