24DBM Search Results

Contextual Info: Advance Product Information December 14, 2004 4 - 14 GHz balanced LNA TGA2512-SM Key Features • • • • • • • Typical Frequency Range: 4 - 14 GHz 2.3 dB Nominal Noise Figure 25 dB Nominal Gain 15 dB AGC Range 13 dBm Nominal P1dB 24dBm Nominal OIP3

Contextual Info: G m S P T S P T 5 6 WIDEBAND, LOW DISTORTION DRIVER AMPLIFIER SIGNAL PROCESSING TECHNOLOGIES General Description Features The SPT561 is a wideband DC coupled, amplifier that combines high output drive and low distortion. At an output of +24dBm 10Vpp into

FPD750SOT89

Contextual Info: EB750SOT89BA FPD750SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • 24dBm Output Power • 17.5dB Gain ¥ 0.7dB Noise Figure ¥ 35dBm IP3 @ 10dBm Pout per Tone ¥ Bias 5V, 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, low noise amplifier. It is reactively

2.45 Ghz power amplifier

Abstract: TAE-1010AB RF MESFET S parameters 1010a tae1010
Contextual Info: Product Information ISO 9001 CERTIFIED TA E - 1 0 1 0 A B 2.45 GHz GaAs MMIC ISM Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +24dBm Output Power @ 1dB Gain Compression 25 dB Gain Low V oltage Operation Voltage Surface Mount Molly-Copper Package Product Description

ST 431

Abstract: START540 500MHz-5GHz
Contextual Info: START540 NPN Silicon RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70

Contextual Info: Product Information ISO 9001 CERTIFIED 6002 5.150 to 5.300 GHz GaAs MMIC Hiperlan Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 24 dB Small Signal Gain 24dBm Linear Output Power 30dBm Third Order Intercept Point Thermally Optimum Copper -T ungsten Package

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 915.0MHz Part No: MP04309 Model: TA1042A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 24dBm 2. DC voltage: 5V

EMP107

Abstract: 0V28-5
Contextual Info: EMP107 5.9 – 7.9 GHz Power Amplifier MMIC UPDATED 12/15/2004 FEATURES • • • • 5.9 – 7.9 GHz Operating Frequency Range 24dBm Output Power at 1dB Compression 20.0 dB Typical Small Signal Gain -41dBc OIMD3 @Each Tone Pout 14 dBm APPLICATIONS • •

Contextual Info: CXE-2089Z LINEAR GENERAL PURPOSE AMPLIFIER Package: SOT-89 Features       50MHz to 1000MHz Operation Internally Matched Input and Output 20dB Small Signal Gain 1.5dB Noise Figure +24dBm Output Power Single 5V to 9V Positive Power Supply Applications

Contextual Info: RF5602 RF56023.0V to 5.0V, 2.3GHz to 2.7GHz Linear Power Amplifier 3.0V TO 5.0V, 2.3GHz TO 2.7GHz LINEAR POWER AMPLIFIER GND VCC2 VCC2 16 15 14 13 BIAS VCC 1 Features 12 RF OUT st 32dB to 34dB Small Signal Gain 2.5% EVM RMS at 25.5dBm, 4.2V  2.5% EVM (RMS) at 24dBm, 3.3V

MMIC marking CODE 06

Contextual Info: CMY 210 GaAs MMIC Datasheet * Ultralinear Mixer with integrated LO-Buffer * Very high Input-IP3 of typical 24dBm * Very low LO-Power demand of typ. 0dBm

UMLC1111B

Abstract: UMLC1-111B UMLC1
Contextual Info: 中国3G TD-SCDMA用 RF模块 UMLC1-111B ! 0.18ml微型模块将推进 世界首创 中国的 3G。 13mm W: 9mm D: 1.5mm H: 采用仿真技术对配套IC进行了优化，能控制散差，发挥稳定的性能。 ●适应3GPP TS25.102 Power Class 2（+24dBm）。

Contextual Info: E-pHEMT AE616 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 37dBm Output IP3 • 20dB Gain at 900MHz • 24dBm P1 dB • Single +5V Supply • Pb Free / RoHS Standard • Cellular, PCS, W-CDMA Systems • High Linearity Drive Amplifier

MGF0917A

Abstract: gp 801 pt 11400
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm

Contextual Info: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE

Contextual Info: CLC561 CLC561 Wideband, Low-Distortion Drive R-amps Literature Number: SNOS862B N Not Intended For New Designs Comlinear CLC561 Wideband, Low Distortion DriveR-Amps General Description Features • ■ ■ ■ te ■ 150MHz bandwidth at +24dBm output Low distortion 2nd/3rd:

EMP107

Contextual Info: EMP107 5.9 – 7.9 GHz Power Amplifier MMIC UPDATED 05/08/2008 FEATURES • • • • 5.9 – 7.9 GHz Operating Frequency Range 24dBm Output Power at 1dB Compression 19.0 dB Typical Small Signal Gain -41dBc OIMD3 @Each Tone Pout 14 dBm APPLICATIONS • •

CHA4105-QDG

Abstract: AN0017 MO-220 QFN PACKAGE Junction to PCB thermal resistance 9140-1
Contextual Info: CHA4105-QDG RoHS COMPLIANT 2-4GHz Driver GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4105-QDG is a monolithic twostage driver amplifier delivering 24dBm output power @ 1dB gain compression in the range 2-4GHz. It is designed for a wide range of

RO4003

Abstract: SN63 TGA2921-EPU-SG TGA2921-SG
Contextual Info: Advance Product Information September 16, 2003 4 Watt 802.11a Packaged Amplifier TGA2921-EPU-SG Key Features • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 800mA 36 dBm Nominal P1dB @ 8V 800mA IMD3 -50dBc @ 24dBm SCL, Typical

MSC 5518

Contextual Info: LX5518 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3-5V Supply Power Gain ~ 30 dB 26dBm @3%EVM,802.11g/5V 24dBm @3.5%EVM,80211g/3.3V 28dBm @CCK,802.11b/5V

CLC560

Abstract: 3 pins trimmer 50p LC560
Contextual Info: Wideband, Low Distortion APPLICATIONS: • output amplification • arbitrary waveform generation • ATE systems • cable/line driving • function generators • SAW drivers • flash A/D driving and testing FEATURES: • 120MHz bandwidth at +24dBm output

GRP1555C1H470J

Abstract: GRP1555C1H220J GRP1555C1H2R7B GRP155R71C103K MAX2247 MAX2247EVKIT testing capacitors using a meter
Contextual Info: 19-2591; Rev 0; 9/02 MAX2247 Evaluation Kit Each kit is assembled with the MAX2247 and incorporates all matching components optimized for the 2.4GHz to 2.5GHz RF frequency band, and POUT = +24dBm. For lower power applications, see Table 2 for appropriate matching components.

MGF0917A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm

4511 gm

Abstract: MGF0917A
Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0917A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=24dBm TYP. @ f=1.9GHz,Pin=4dBm