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IXFK Datasheets (162)

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IXYS

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFK100N10	IXYS	100V HiPerFET power MOSFET	Original	PDF	117.06KB	4
IXFK100N25	IXYS	250V HiPerFET power MOSFET	Original	PDF	98.1KB	2
IXFK100N65X2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 100A TO-264	Original	PDF	206.86KB
IXFK102N30P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF	106.38KB	5
IXFK102N30P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 102A TO-264	Original	PDF		2
IXFK105N07	IXYS	70V HiPerFET power MOSFET	Original	PDF	159.33KB	4
IXFK110N06	IXYS	60V HiPerFET power MOSFET	Original	PDF	159.33KB	4
IXFK110N07	IXYS	70V HiPerFET power MOSFET	Original	PDF	159.33KB	4
IXFK120N20	IXYS	200V HiPerFET power MOSFET	Original	PDF	47.88KB	2
IXFK120N20	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 120A TO-264AA	Original	PDF		4
IXFK120N20P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF	609.09KB	5
IXFK120N25	IXYS	250V HiPerFET power MOSFET	Original	PDF	98.73KB	2
IXFK120N25P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF	141.57KB	5
IXFK120N30P3	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 120A TO-264	Original	PDF		5

IXFK120N30T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 120A 300V TO-264	Original	PDF		5
IXFK120N65X2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 120A TO-264	Original	PDF	207.87KB
IXFK140N20P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF	102.65KB	5
IXFK140N25T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 140A TO264	Original	PDF		5
IXFK140N30P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 140A TO-264	Original	PDF		5
IXFK150N10	IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF	117.05KB	4

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IXYS Corporation


IXYS Corporation IXFK64N60Q3 Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFK64N60Q3		13		1	1 $12.61 10 $12.61 100 $12.61 1000 $12.61 10000 $12.61	Buy Now
IXYS Corporation IXFK102N30P Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFK102N30P		5		1	1 $16.48 10 $14.08 100 $10.86 1000 $10.86 10000 $10.86	Buy Now
IXYS Corporation IXFK250N10P Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFK250N10P		1		1	1 $27.96 10 $20.67 100 $17.31 1000 $17.31 10000 $17.31	Buy Now
IXYS Corporation IXFK44N50P Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFK44N50P				1	1 $15.36 10 $15.36 100 $8.72 1000 $8.30 10000 $8.30	Get Quote
Newark	IXFK44N50P	Bulk	246		1	1 $16.87 10 $13.00 100 $9.12 1000 $8.73 10000 $8.34	Buy Now
IXYS Corporation IXFK120N20P Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFK120N20P				1	1 $14.01 10 $12.45 100 $8.77 1000 $8.71 10000 $8.71	Get Quote
TTI	IXFK120N20P	Tube			300	1 - 10 - 100 - 1000 $10.20 10000 $10.20	Buy Now

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IXFK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
34N80 Abstract: IXFN34N80 ixfx34n80 Contextual Info: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	34n80 247tm ixfn34n80 ixfx34n80	PDF
73N30 Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30 Contextual Info: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK	Original	o-264 73n30 sot-227 b" dimensions sot-227 package +1ixfk73n30	PDF
62n25 Abstract: 62n25 mosfet 62n2 247TM Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient	Original	62n25 247tm o-264 728b1 +262n25 mosfet 62n2	PDF
IRM-38 Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20 Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings	Original	o-264 90n20 100n20 106n20 +5ixfn90n20 ixfn106n20 irm-38 ixfk90n20 ixfn100n20	PDF
120N25 Abstract: ID104 Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120n25 id104 247tm 728b1	PDF
100N25 Abstract: ID104 Contextual Info: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM	Original	100n25 id104 247tm capa26	PDF
52N30 Abstract: IXFH 52N30q 52N30Q TO264 footprint Contextual Info: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions	Original	52n30q 52n30 ixfh 52n30q to264 footprint	PDF
32N50Q Abstract: 125OC Contextual Info: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A	Original	32n50q 247tm 125oc 728b1 +2123b1 065b1	PDF
36N60 Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623 Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)	Original	32n60 36n60 250ns o-264 +3ixfn sot227 fast diode sot-227 d-68623	PDF
Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class = 150 V = 80 A = 22.5 mW £ 200 ns RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS	Original	80n15q	PDF
Contextual Info: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)	Original	21n100f 247tm 728b1	PDF
E 150N10 Abstract: 150N10 100N10 IXFK100N10 IXFN150N10 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C	Original	ixfk100n10 ixfn150n10 o-264 id120 +3e 150n10 150n10 100n10	PDF
IXFK240N15T2 Abstract: IXFX240N15T2 PLUS247 Contextual Info: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions	Original	ixfk240n15t2 ixfx240n15t2 140ns o-264 +2240n15t2 plus247	PDF
80N50P Abstract: IXFK 80N50P PLUS247 Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80n50p o-264 ixfk 80n50p plus247	PDF

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS on t rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 36 A ≤ 190 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol	Original	36n60p	PDF
88N30P Abstract: A220D 88N30 Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr = 300 V = 88 A Ω = 40 mΩ ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300	Original	88n30p o-247 a220d 88n30	PDF
200N10P Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	200n10p ot-227 e153432 ixfx200n10p +4ixfn200n10p to-227b plus247 ixfn200n10p ixys	PDF
360N10T Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247 Contextual Info: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions	Original	ixfk360n10t ixfx360n10t 130ns o-264 +3360n10t plus-247 plus247	PDF
Contextual Info: Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient	Original	90n30 id104 247tm o-264	PDF
Siemens DIODE E 1240 Abstract: IXFK80N60P3 IXFX80N60P3 Contextual Info: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V	Original	ixfk80n60p3 ixfx80n60p3 o-264 250ns +3plus247 80n60p3 siemens diode e 1240	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 24N100 IXFX 24N100 VDSS ID25 RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000	Original	24n100 247tm o-264	PDF
TO-264-aa Contextual Info: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30	OCR Scan	ixfk90n20q ixfk90n20qs o-264 o-264aa +1to-264-aa	PDF
RM338 Abstract: qfl 289 106N20 IXFK90N20 Contextual Info: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2	OCR Scan	ixfk90n20 ixfn106n20 90n20 106n20 +5200ns 20mi2 d68623 rm338 qfl 289	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120n20 id104 247tm o-264 +2125oc 728b1	PDF

IXFK Search Results

IXFK Datasheets (162)

IXFK Price and Stock

IXYS Corporation IXFK64N60Q3

IXYS Corporation IXFK102N30P

IXYS Corporation IXFK250N10P

IXYS Corporation IXFK44N50P

IXYS Corporation IXFK120N20P

IXFK Datasheets Context Search

34N80

73N30

62n25

IRM-38

120N25

100N25

52N30

32N50Q

36N60

E 150N10

IXFK240N15T2

80N50P

88N30P

200N10P

360N10T

Siemens DIODE E 1240

TO-264-aa

RM338