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IXYS Corporation


IXYS Corporation IXTK200N10P Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTK200N10P		14		1	1 $12.34 10 $10.67 100 $10.47 1000 $10.47 10000 $10.47	Buy Now
Mouser Electronics	IXTK200N10P		631			1 $20.13 10 $11.94 100 $11.94 1000 $11.94 10000 $11.94	Buy Now
Newark	IXTK200N10P	Bulk	208		1	1 $19.85 10 $12.11 100 $11.87 1000 $11.38 10000 $10.90	Buy Now
TTI	IXTK200N10P	Tube			300	1 - 10 - 100 - 1000 $11.11 10000 $11.11	Buy Now
IXYS Corporation IXTR200N10P Transistor: N-MOSFET; Polar™; unipolar; 100V; 120A; 300W; 100ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTR200N10P				300	1 - 10 - 100 - 1000 $15.04 10000 $15.04	Get Quote
Mouser Electronics	IXTR200N10P					1 - 10 - 100 - 1000 $14.89 10000 $14.89	Get Quote
TTI	IXTR200N10P	Tube			300	1 - 10 - 100 - 1000 $14.89 10000 $14.89	Buy Now
IXYS Corporation IXFR200N10P Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFR200N10P				300	1 - 10 - 100 - 1000 $15.04 10000 $15.04	Get Quote
Mouser Electronics	IXFR200N10P					1 - 10 - 100 - 1000 $14.35 10000 $14.35	Get Quote
TTI	IXFR200N10P	Tube			300	1 - 10 - 100 - 1000 $12.68 10000 $12.68	Buy Now
IXYS Corporation IXFN200N10P Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFN200N10P				1	1 $30.21 10 $24.34 100 $23.32 1000 $23.32 10000 $23.32	Get Quote
Mouser Electronics	IXFN200N10P		1,914			1 $31.33 10 $23.70 100 $23.70 1000 $23.70 10000 $23.70	Buy Now
Newark	IXFN200N10P	Bulk	1,542		1	1 $34.58 10 $25.48 100 $24.54 1000 $22.66 10000 $20.78	Buy Now
TTI	IXFN200N10P	Tube			300	1 - 10 - 100 - 1000 $22.65 10000 $22.65	Buy Now
Bristol Electronics	IXFN200N10P		2		1	1 $24.00 10 $24.00 100 $24.00 1000 $24.00 10000 $24.00	Buy Now
IXYS Corporation IXFK200N10P Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFK200N10P				1	1 $22.30 10 $16.26 100 $13.01 1000 $10.81 10000 $10.81	Get Quote
Mouser Electronics	IXFK200N10P		178			1 $24.70 10 $15.22 100 $15.21 1000 $15.05 10000 $15.05	Buy Now
TTI	IXFK200N10P	Tube			300	1 - 10 - 100 - 1000 $13.78 10000 $13.78	Buy Now

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200N10P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
200N10P Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	200n10p ot-227 e153432 ixfx200n10p +4ixfn200n10p to-227b plus247 ixfn200n10p ixys	PDF
200N10P Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 200N10P VDSS ID25 RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25	Original	200n10p o-264	PDF
HiPerFET Power MOSFETs Abstract: 710 115 HiperFET ds99365 Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	200n10p 247tm e153432 hiperfet power mosfets +3710 115 hiperfet ds99365	PDF
200N10P Abstract: DIODE 630 Contextual Info: PolarHTTM Power MOSFET IXTK 200N10P VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM	Original	200n10p diode 630	PDF
200N10P Abstract: ISOPLUS247 Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 133 A Ω RDS on ≤ 9 mΩ ≤ 150 ns tRR IXFR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	200n10p 03-22-06-e isoplus247	PDF
200N10P Abstract: HiperFET ISOPLUS247 Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXFR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	200n10p isoplus247 e153432 hiperfet	PDF
Contextual Info: PolarHTTM Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient	Original	200n10p vdd12	PDF
200N10P Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 200N10P VDSS ID25 RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25	Original	200n10p o-264	PDF
200N10P Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXTR 200N10P RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 9.0 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	200n10p 247tm e153432	PDF
Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFK 200N10P IXFX 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	200n10p o-264	PDF
Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFN 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	200n10p 03-22-06-e	PDF
200N10P Abstract: PLUS247 Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFK 200N10P IXFX 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	200n10p o-264 plus247	PDF
200N1 Abstract: ISOPLUS247 200N10P TR 505 T200N Contextual Info: PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS = 100 V ID25 = 120 A Ω 8 mΩ RDS on ≤ Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ	Original	200n10p 247tm e153432 03-22-06-e +4200n1 isoplus247 tr 505 t200n	PDF
Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFN 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	200n10p ot-227 e153432 03-22-06-e	PDF

Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 120 A Ω RDS on ≤ 8 mΩ IXTR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ	Original	200n10p 247tm e153432 03-22-06-e	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	110n055p-5s 75n10p-5s 110n10p-6s 140n10p-7s +15170n10p-8s 200n10p-88 62n15p-5s 96n15p-6s 120n15p-7s 150n15p-8s diode 1334 1334 diode 96n20 36n30p equivalent 88n30 100n25p 36n30 ixtp75n10p ixtp ixtp ixtp ixtp	PDF

200N10P Search Results

200N10P Price and Stock

IXYS Corporation IXTK200N10P

IXYS Corporation IXTR200N10P

IXYS Corporation IXFR200N10P

IXYS Corporation IXFN200N10P

IXYS Corporation IXFK200N10P

200N10P Datasheets Context Search

200N10P

200N10P

HiPerFET Power MOSFETs

200N10P

200N10P

200N10P

200N10P

200N10P

200N10P

200N1

IXTD08N100P-1A

7N60B equivalent

DIODE 1334