DS99365 Search Results

HiPerFET Power MOSFETs

Abstract: 710 115 HiperFET ds99365
Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C

amplitude modulation applications

Abstract: MACH ZEHNDER electro-optic modulator LUCENT ELECTRO DEVICE 2625C OC-768 lithium niobate 40 Mach-Zehnder modulator
Contextual Info: Preliminary Data Sheet, Rev.2 June 2001 40 Gbits/s Lithium Niobate Electro-Optic Modulator Applications The Lithium Niobate 40 Gbits/s Modulator 2625C is a higherspeed addition to the Agere Systems’ family of modulators that also includes 10 Gbits/s and 20 Gbits/s versions.

amplitude modulation applications

Abstract: Mach-Zehnder modulator LUCENT ELECTRO DEVICE TR-NWT-00468 dual electrode mach-zehnder OC-768 lucent laser 1550
Contextual Info: Product Definition Sheet August 1999 40 Gbits/s Lithium Niobate Electro-Optic Modulator Features • Ti-diffusion process ■ Dual-drive technology ■ Thin-film, 50 Ω termination in package for minimal reflections Low modulation voltages ■ Tested to Bellcore 468

200N10P

Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXTR 200N10P RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 9.0 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C

200N1

Abstract: ISOPLUS247 200N10P TR 505 T200N
Contextual Info: PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS = 100 V ID25 = 120 A Ω 8 mΩ RDS on ≤ Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 120 A Ω RDS on ≤ 8 mΩ IXTR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ

Lucent 1319

Abstract: 1319ms apd photodetector pin diagram of ic 7495 1319MR 1319ma transistor d2300 d2525p* lucent 2000 laser module Lucent 700b
Contextual Info: Data Sheet July 2000 1319-Type High-Speed Lightwave Receiver Features • High data rate capability: 2.5 Gbits/s ■ APD or PIN photodetector ■ Fully operational through the 1.3 µm to 1.55 µm wavelength range ■ Typical sensitivity: — –34 dBm with APD