200N1 Search Results

200N10P

Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

200N10P

Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 200N10P VDSS ID25 RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25

HiPerFET Power MOSFETs

Abstract: 710 115 HiperFET ds99365
Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C

Contextual Info: TECHNICAL DATA SHEET 7/16 PANEL PLUG SOLDER END 60S451-200N1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-4, VG 95250, EN 122190, DIN 47223 Documents Panel piercing B 46 Material and plating RF_35/12.04/3.0

Contextual Info: TECHNICAL DATA SHEET 7/16 PANEL JACK SOLDER END 60K451-200N1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-4, VG 95250, EN 122190, DIN 47223 Documents Panel piercing B 46 Material and plating RF_35/12.04/3.0

200N10P

Abstract: DIODE 630
Contextual Info: PolarHTTM Power MOSFET IXTK 200N10P VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM

200N10P

Abstract: ISOPLUS247
Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 133 A Ω RDS on ≤ 9 mΩ ≤ 150 ns tRR IXFR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

200N10P

Abstract: HiperFET ISOPLUS247
Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXFR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

Contextual Info: PolarHTTM Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient

LV124

Contextual Info: DATA SHEET > PFM 200N100 > 20140604 PFM 200N100 AUTOMOTIVE POWER FAIL SIMULATOR FOR OEM LV 124 AND OEM LV 148 STANDARDS FOR TESTS ACCORDING TO . > BMW GS 95024-2-1 > BMW GS 95026 > Mercedes-Benz MBN LV 124-1 > OEM LV 124 > OEM LV 148 > VW 80000 > VW 82148

200N10P

Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 200N10P VDSS ID25 RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25

200N10P

Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXTR 200N10P RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 9.0 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C

Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFK 200N10P IXFX 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFN 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

200N1

Abstract: ISOPLUS247 200N10P TR 505 T200N
Contextual Info: PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS = 100 V ID25 = 120 A Ω 8 mΩ RDS on ≤ Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFN 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 133 A Ω RDS on ≤ 9 mΩ ≤ 150 ns tRR IXFR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

Contextual Info: TECHNICAL DATA SHEET 7/16 PANEL PLUG SOLDER END 60S451-200N1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-4, VG 95250, EN 122190, DIN 47223 Documents Panel piercing B 46 Material and plating RF_35/12.04/3.0

Contextual Info: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 120 A Ω RDS on ≤ 8 mΩ IXTR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: TECHNICAL DATA SHEET 7/16 60K465-200N1 PANEL JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-4, VG 95250, EN 122190, DIN 47223 Documents Panel piercing B 46B Material and plating RF_35/12.04/3.0 Connector parts

VGF20

Contextual Info: FUJI 2-Pack IGBT 1200 V 200 A 2MBI 200N-120 S tL a s T D S O E IGBT MODULE N series n Features • S quare RBSO A • L ow S a tu ra tion Voltage • Less Total P o w e r D issip atio n •Im p ro ve d FW D C haracteristic • M in im ize d In te rn a l S tra y Inductance

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

200N15N

Abstract: ipd200n15n3 IEC61249-2-21 IPP200N15N3 PG-TO220-3
Contextual Info: 200N15N3 G 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 150 V • N-channel, normal level R DS on ,max 20 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 50 A • Very low on-resistance R DS(on)

Contextual Info: 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor 200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 150 V RDS(on),max 20 mW ID 50 A • Very low on-resistance R DS(on)