Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFK90N20Q Search Results

    IXFK90N20Q Datasheets (2)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFK90N20Q
    IXYS 200V HiPerFET power MOSFET Q-class Original PDF 100.62KB 2
    IXFK90N20QS
    IXYS HiPerFET Power MOSFET Original PDF 136.19KB 2
    SF Impression Pixel

    IXFK90N20Q Price and Stock

    IXYS Corporation

    IXYS Corporation IXFK90N20Q

    MOSFETs 200V 90A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFK90N20Q
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IXFK90N20Q Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO-264-aa

    Contextual Info: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30


    OCR Scan
    ixfk90n20qixfk90n20qso-264o-264aa+1to-264-aa PDF

    Contextual Info: □ IXYS HIPerFET IXFK90N20Q IXFK90N20QS Power MOSFETs V DSS ^D25 D DS on Q Class Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS Continuous ±20 V V GSM Transient ±30 V DGR ^D25 Tc = 25°C


    OCR Scan
    ixfk90n20qixfk90n20qso-264aa PDF

    TO264AA

    Abstract: IXFK90N20Q IXFK90N20QS TO-264-aa
    Contextual Info: ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFK90N20Q IXFK90N20QS Q Class Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C


    Original
    ixfk90n20qixfk90n20qso-264o-264aa+2to264aato-264-aa PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696 PDF

    Contextual Info: IPIXYS Advanced Technical Information IXFK 90N20Q IXFX 90N20Q HiPerFET Power MOSFETs Q Class = 200 V = 90 A DSS ^D25 P DS on * rr = 2 2 m ß < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg High dv/dt,Low trr Symbol Test Conditions Maximum Ratings


    OCR Scan
    90n20qto150o-264aaplus247tm PDF

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan
    o-247t0-204o-26476n06-11+1475n06-12110n0676n07-1176n07-12ixys ixfn 55n50170n10c1106ixfh26n50c1124ixfn170n10c112015n10076n06ixfn36n60 PDF

    h bridge ups circuit schematic diagram

    Abstract: IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm IXDP630 IXDP631 schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"
    Contextual Info: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


    Original
    ev6r11ix6r11ixdp630ixdp631+11ixdd414ixfk90n20q0a/200vh bridge ups circuit schematic diagramixdp630 application note3 phase ups schematic diagramresistors 1k ohmschematic diagram upsix6r11s3schematic power supply with igbtspanasonic ic "18-pin PDF

    Contextual Info: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


    Original
    ev6r11ix6r11ixdp630ixdp631+3ixdd414ixfk90n20q0a/200v PDF

    74HC00

    Abstract: ixdp630 IXDP630 application note 3 phase ups schematic diagram make three phase ups schematic diagram IXDB4410 74HC00-1 IXBD4411PI 74hc00 oscillator circuit IXDD414
    Contextual Info: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation


    Original
    evbd4400ixdp630ixdp63174hc00+974hc04ixdp630 application note3 phase ups schematic diagrammake three phase ups schematic diagramixdb441074hc00-1ixbd4411pi74hc00 oscillator circuitixdd414 PDF

    TX02-4400PI

    Contextual Info: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation


    Original
    evbd4400ixdp63074hc0074hc04+2ixfk90n20qtx02-4400pi PDF

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original
    irfp354o-247irfp360lc2n3049die+132c3049o-204aa/to-3ixtm20n55aixfh15n1002n3051ixfx15n100ixfh40n30ixfm6n90irfp450rixth24n50lixth26n50ixfh20n50ixfh9n80 PDF

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan
    isoplus220tmisoplus247tmvt0268t0264+16ot227bo-263o-220247tmo-247o-204ne 22 mosfetixfh26n60qixft12n100qixfr100n25ixfn26n90fn230ixfn36n60n50pixfn44n50u2ixfn80n50 PDF