90N20Q Search Results

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings

ax2002

Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFK 90N20Q IXFX 90N20Q ^D25 R Q Class DS on = 200 V = 90 A = 22 m ii t < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Q High dv/dt,Low t Symbol Test C onditions M axim um Ratings V OSS

Contextual Info: IPIXYS Advanced Technical Information IXFK 90N20Q IXFX 90N20Q HiPerFET Power MOSFETs Q Class = 200 V = 90 A DSS ^D25 P DS on * rr = 2 2 m ß < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg High dv/dt,Low trr Symbol Test Conditions Maximum Ratings

IXFX 90N20Q

Abstract: 90N20Q 90n20
Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings

IXFX 90N20Q

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions

Contextual Info: Advanced Technical Information HiPerFET TM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A 22 mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol

90N20Q

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings

IXFX 90N20Q

Abstract: 90N20Q
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX)

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

12N60c equivalent

Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268