TO264AA Search Results

ABE 027

Abstract: ely transformers IRFM460 IRFM460D IRFM460U N431 BBV 32 transistors
Contextual Info: Data Sheet No. PD-9.727A INTERNATIONAL RECTIFIER IQ R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM46Q N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

Contextual Info: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT8030LVR A dvanced P o w er Te c h n o l o g y 800V 27A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT8030LVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 27A 0.300Í1 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

85N60C

Abstract: UPS SIEMENS E72873 ID100
Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G  D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C

TO-264-aa

Contextual Info: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30

21N100

Abstract: 21N10 ixtw DIXYS IXTN21N100
Contextual Info: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ

Contextual Info: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

BD3 diode

Abstract: APT8032LNR ty-100a
Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT8032LNR O S POWER MOS IVe 800V 25.0A 0.320 AVALANCHE RATED N -C H AN N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS !d ' dm V GS ^GSM All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: Power Packages TO-218 SINGLE LEAD JEDEC STYLE TO-218 PLASTIC PACKAGE E INCHES A A1 ØP Q H1 D TERM. 2 q L2 L1 TERM. 1 L R L3 15o c b J1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.185 0.195 4.70 4.95 - A1 0.058 0.062 1.48 1.57 - b 0.433 0.443 11.00 11.25

10 AMP 1200V RECTIFIER DIODE

Abstract: 600V 25A Ultrafast Diode 1200v diode to247 ultrafast diode 10a 300v smps 450W ULTRA fast rectifier diode 30A 200V cathode common ULTRA fast rectifier diode 30A 200V anode common 1200v 30A to247 Diode C3 1200v 25A to247
Contextual Info: SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

vk200 rf choke

Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.

RHRG3040

Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040
Contextual Info: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090

Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient

ot 409

Abstract: SMD-264 K44N50
Contextual Info: nixYS ix f k / ix f n 44N50 IXFK/IXFN 48N50 trr Symbol Test Conditions v DSS Tj = 25°Cto150°C 500 500 V VDGR T,J = 2 5°C to 150°C; RG „S= 1 Mi2 500 500 V VGS vGSM Continuous d20 ±20 V Transient ±30 ±30 V ^D25 Tc =25°C 44N50 48N50 44 48 44 48 A A

RHR75120

Abstract: RHR75120C TO-264-aa RHR1Y75120CC TA49042
Contextual Info: RHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft R ecovery. <85ns • Operating Tem p eratu re. . . +175 C • Reverse V oltag e. .1200V JEDEC TO-264AA ANODE 2

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: □ IXYS HIPerFET IXFK90N20Q IXFK90N20QS Power MOSFETs V DSS ^D25 D DS on Q Class Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS Continuous ±20 V V GSM Transient ±30 V DGR ^D25 Tc = 25°C

Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGK 120N60B IXGX 120N60B VCES ^C25 V CE sat Maximum Ratings Symbol Test C onditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 600 600 V V v vGEM Continuous Transient ±20 ±30

TO-264-aa

Contextual Info: □ IXYS v DSS HiPerFET Power MOSFETs DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C

APT12082

Abstract: APT12082LNR
Contextual Info: A dvanced po w er Te c h n o lo g y APT12082LNR 1200V 16.0A 0.82fí POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol 'DSS All Ratings: Tc = 25°C unless otherwise specified. P a ra m e te r Drain-Source Voltage

Contextual Info: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings

Contextual Info: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25