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onsemi FDH44N50 Power MOSFET N-Channel UniFETTM 500 V 44 A 120 mΩ TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FDH44N50		450			1 - 10 - 100 $6.79 1000 $5.90 10000 $5.86	Buy Now
Avnet Americas ()	FDH44N50	Bulk			1	1 $12.53 10 $11.12 100 $7.81 1000 $7.24 10000 $7.24	Get Quote
	FDH44N50	Tube		57 Weeks	450	1 - 10 - 100 - 1000 $5.07 10000 $5.00	Buy Now
Newark ()	FDH44N50	Bulk	235		1	1 $12.53 10 $11.12 100 $7.81 1000 $7.24 10000 $7.24	Buy Now
	FDH44N50	Bulk	216		1	1 $12.41 10 $11.00 100 $7.69 1000 $7.12 10000 $7.12	Buy Now
TME	FDH44N50		181		1	1 $9.49 10 $6.17 100 $5.88 1000 $5.88 10000 $5.88	Buy Now
Avnet Asia	FDH44N50			57 Weeks	450	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	FDH44N50		90	14 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDH44N50		30	15 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXFK44N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IXFK44N50P		300			1 - 10 - 100 $8.94 1000 $8.10 10000 $8.08	Buy Now
RS	IXFK44N50P	Bulk		8 Weeks	25	1 - 10 - 100 $13.82 1000 $13.82 10000 $13.82	Get Quote
Flip Electronics	IXFK44N50P		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation R5F61644N50FPV - Trays (Alt: R5F61644N50FPV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	R5F61644N50FPV	Tray		18 Weeks	60	1 - 10 - 100 $17.22 1000 $16.87 10000 $16.87	Buy Now
ComSIT USA	R5F61644N50FPV		9			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	R5F61644N50FPV			20 Weeks	60	1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFK44N50P Mosfet, N-Ch, 500V, 44A, To-264; \|Ixys Semiconductor IXFK44N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFK44N50P	Bulk	246		1	1 $16.87 10 $13.74 100 $9.12 1000 $8.61 10000 $8.61	Buy Now
TTI	IXFK44N50P	Tube			300	1 - 10 - 100 - 1000 $9.12 10000 $9.12	Buy Now
TME	IXFK44N50P				1	1 $15.36 10 $15.36 100 $8.72 1000 $8.31 10000 $8.31	Get Quote
Littelfuse Inc IXTQ44N50P Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tu; \|Littelfuse IXTQ44N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTQ44N50P	Bulk			300	1 - 10 - 100 - 1000 $8.66 10000 $8.12	Buy Now
RS	IXTQ44N50P	Bulk		8 Weeks	30	1 - 10 - 100 $12.40 1000 $12.40 10000 $12.40	Get Quote

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44N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
123B16 Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM	Original	44n50q 48n50q 44n50 48n50 +7ot-227 e153432 728b1 123b1 123b16 ixfn48n50q ixfn 48n50q	PDF
44N50 Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions	Original	isoplus247tm 44n50p 405b2 44n50	PDF
44N50P Abstract: ISOPLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS	Original	44n50p isoplus247tm 03-21-06-b isoplus247	PDF
48N50 Abstract: 48N50Q 44N50 Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q RDS on 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	44n50q 48n50q 44n50 48n50 +2ot-227 e153432	PDF
48N50Q Abstract: 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings	Original	isoplus247tm 44n50q 48n50q 247tm +6e153432 ixfr44n50q ixfr48n50q 728b1 44n50 0nal	PDF
ot 409 Abstract: SMD-264 K44N50 Contextual Info: nixYS ix f k / ix f n 44N50 IXFK/IXFN 48N50 trr Symbol Test Conditions v DSS Tj = 25°Cto150°C 500 500 V VDGR T,J = 2 5°C to 150°C; RG „S= 1 Mi2 500 500 V VGS vGSM Continuous d20 ±20 V Transient ±30 ±30 V ^D25 Tc =25°C 44N50 48N50 44 48 44 48 A A	OCR Scan	44n50 48n50 cto150 ot-227 +4e153432 ot 409 smd-264 k44n50	PDF
44N50 Abstract: 48N50 48N50Q ixys ixfk 44n50 Contextual Info: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)	Original	48n50q 44n50q 247tm 44n50 +248n50 ixys ixfk 44n50	PDF
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet	Original	isoplus247tm 44n50q 48n50q ixfr44n50q	PDF
44n50 Abstract: 44N50P IXFH44N50P Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 44N50P IXFT 44N50P IXFK 44N50P VDSS ID25 RDS on trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	44n50p 405b2 ixfh44n50p 44n50	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P = 500 V = 44 A Ω ≤ 140 mΩ ≤ 200 ns VDSS ID25 RDS on trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS	Original	44n50p o-247 o-264 ixfh44n50p +103-21-06-b	PDF
Contextual Info: PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω ≤ 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM	Original	44n50p 03-21-06-b	PDF
ixys ixfk 44n50 Abstract: DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 48N50 SMD-264 Contextual Info: nixYS IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 D ^D S S ^D25 DS on IXFK/FN 44N50 500 V 44 A 0.12 Q. IXFK/FN 48N50 500 V 48 A 0.10 a HiPerFET Power MOSFET N-Channel Enhancement Mode T O -2 6 4 P a c k a g e s Avalanche Rated, High dv/dt, Low t (t < 250) ns	OCR Scan	44n50/50s 48n50/50s 44n50 48n50 +7ixys ixfk 44n50 diode smd v05 1j04 5l46 ixfn48n50 ixfk 75 n 50 smd-264	PDF
Contextual Info: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50	Original	44n50 48n50 o-264	PDF
Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr ≤ 250 ns Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50	Original	44n50q 48n50q 44n50 48n50 +4ot-227 e153432 728b1 123b1	PDF

Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS IXFE 44N50Q IXFE 48N50Q ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions	Original	44n50q 48n50q 227tm 728b1 +1123b1	PDF
48N50Q Abstract: s 404 p Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ IXFE 44N50Q IXFE 48N50Q trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings	Original	44n50q 48n50q 728b1 123b1 +2065b1 s 404 p	PDF
IXFH44N50P Abstract: 44n50p ixfh 44n50p C4455 IXFK44N50P Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P RDS on trr Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 500 500 V V VGSM VGSM	Original	44n50p o-247 ixfh44n50p 03-21-06-b +3ixfh 44n50p c4455 ixfk44n50p	PDF
48N50Q Abstract: IXFN48N50Q 44N50 Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ IXFE 44N50Q IXFE 48N50Q trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions	Original	44n50q 48n50q 227tm ixfn48n50q +144n50	PDF
Contextual Info: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)	Original	48n50q 44n50q 247tm o-264 +244n50 48n50	PDF
48N50 Abstract: TAB 429 H 44n50 ixys ixfk 44n50 ixys 44n50 SMD-264 931 diode smd D-68623 IXFK48N50 smd diode 513 Contextual Info: IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 VDSS ID25 RDS on IXFK/FN 44N50 500 V 44 A 0.12 Ω IXFK/FN 48N50 500 V 48 A 0.10 Ω TM HiPerFET Power MOSFET N-Channel Enhancement Mode TO-264 Packages Avalanche Rated, High dv/dt, Low trr (trr ≤ 250) ns	Original	44n50/50s 48n50/50s 44n50 48n50 +9o-264 smd-264 tab 429 h ixys ixfk 44n50 ixys 44n50 931 diode smd d-68623 ixfk48n50 smd diode 513	PDF
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	44n50p 405b2	PDF
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet	Original	isoplus247tm 44n50q 48n50q ixfr44n50q	PDF
Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs ISOPLUS247TM F-Class: MegaHertz Switching IXFR 44N50F VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	isoplus247tm 44n50f 247tm e153432	PDF
44N50P Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	44n50p 405b2	PDF

44N50 Search Results

44N50 Price and Stock

onsemi FDH44N50

Littelfuse Inc IXFK44N50P

Renesas Electronics Corporation R5F61644N50FPV

IXYS Corporation IXFK44N50P

Littelfuse Inc IXTQ44N50P

44N50 Datasheets Context Search

123B16

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48N50

48N50Q

ot 409

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ixys ixfk 44n50

48N50Q

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