APT8030LVR Search Results
APT8030LVR Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT8030LVR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 62.04KB | 4 | ||
| APT8030LVRG | Microchip Technology | MOSFET N-CH 800V 27A TO264 | Original | 61.83KB |
APT8030LVR Price and Stock
Microchip Technology Inc APT8030LVRGThe APT8030LVRG is an 800V 27A N-Channel enhancement mode Power MOSFET designed for high-voltage fast-switching applications. |
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APT8030LVRG | Tube | 25 |
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APT8030LVRG | Bulk | 250 |
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APT8030LVRG | Tube | 20 Weeks |
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APT8030LVRG | 22 Weeks | 1 |
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APT8030LVRG | 21 Weeks | 1 |
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APT8030LVRG | 7,867 |
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APT8030LVR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: APT8030LVR A dvanced P o w er Te c h n o l o g y 800V 27A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
apt8030lvro-264o-264aa | |
APT8030LVRContextual Info: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
Original |
apt8030lvro-264 | |
max7900Contextual Info: APT8030LVR A dvanced po w er Te c h n o l o g y 800V 27A 0.300Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
apt8030lvro-264max7900 | |
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Contextual Info: APT8030LVR A D V A N CED PO W ER Te c h n o l o g y 800V 27A 0.300Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
apt8030lvro-264 | |
h137Contextual Info: A dvanced P o w er Te c h n o l o g y APT8030LVR 800V ' 27A 0.300Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
apt8030lvro-264mil-std-750o-264aa+1 | |
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Contextual Info: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. |
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apt8030lvro-264 | |
nt 6600 G
Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
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OCR Scan |
apt1201r6bvrapt1201r5bvrapt1001rbvrapt10086bvr+16 | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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Original |
mil-prf-19500iso9001apt10026jnapt1004rbn+8 | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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Original |
mil-prf-19500iso90015017bvr40814+8 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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Original |
mil-prf-19500iso9001apt6015lvr5020bn+8 |