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APT1201R6BVR Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT1201R6BVR		Advanced Power Technology	POWER MOS V 1200V 8A 1.600 Ohm	Original	PDF	64.34KB	4
APT1201R6BVR		Advanced Power Technology	N-Channel enhancement mode power MOSFET	Original	PDF	30.42KB	2
APT1201R6BVR		Motorola	2.0GHz Dual Modulas Prescaler	Scan	PDF	705.12KB	10

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Microchip Technology Inc


Microchip Technology Inc APT1201R6BVRG Transistor MOSFET N-Channel 1200V 8A 3-Pin TO-247 - Rail/Tube (Alt: APT1201R6BVRG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	APT1201R6BVRG	Tube			60	1 - 10 - 100 $12.21 1000 $10.69 10000 $10.69	Buy Now
Mouser Electronics	APT1201R6BVRG					1 $12.40 10 $12.40 100 $10.71 1000 $10.33 10000 $10.33	Get Quote
Newark	APT1201R6BVRG	Bulk			250	1 - 10 - 100 - 1000 $10.33 10000 $10.33	Buy Now
Microchip Technology Inc	APT1201R6BVRG	Tube		20 Weeks		1 $12.40 10 $12.40 100 $10.71 1000 $9.82 10000 $9.50	Buy Now
Onlinecomponents.com	APT1201R6BVRG					1 - 10 $12.01 100 $10.19 1000 $9.82 10000 $9.82	Buy Now

Master Electronics	APT1201R6BVRG					1 - 10 $12.01 100 $10.19 1000 $9.82 10000 $9.82	Buy Now

APT1201R6BVR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
nt 6600 G Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr Contextual Info: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700	OCR Scan	apt1201r6bvr apt1201r5bvr apt1001rbvr apt10086bvr +16apt8075bvr apt8065bvr apt8056bvr apt6040bvr apt6035bvr apt6030bvr nt 6600 g apt60m75jvr apt30m40jvr apt20m45b apt50m50jvr apt12080jvr 130-131 apt5014lvr apt5020bvfr apt40m70jvr	PDF
APT1201R6BVR Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt1201r6bvr o-247	PDF
APT1201R6BVR Abstract: APT1201R6SVR Contextual Info: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt1201r6bvr apt1201r6svr o-247 apt1201r6bvr/svr	PDF
Contextual Info: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt1201r6bvr apt1201r6svr o-247 apt1201r6bvr/svr +1dr065	PDF
APT1201R6BVR Abstract: BAT 545 Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.	Original	apt1201r6bvr o-247 bat 545	PDF
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	ad818 ad818die ad820 ad821 +12ad820die o-204aa/to-3 bd119 bc148a apt1002rbnr 1000 volt npn bd109 apt5025an apt904r2bn bd107 apt1001r3an apt1004rbnr	PDF
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	mil-prf-19500 iso9001 apt10026jn apt1004rbn +8apt10050jn fredfets apt8030jn apt4020bn apt5010lvfr apt5014lvr arf444 apt10m09lvr	PDF
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	mil-prf-19500 iso9001 5017bvr 40814 +85020bn 1431 t apt5010lvr apt1001rblc apt10050 apt30m85bvr apt5020blc apt2x101d60	PDF
PT1201 Abstract: diode SM I600N Contextual Info: A P T 1201 R 6B V R A dvanced P o w er Te c h n o lo g y ' 1200V sa i.600n POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	o-247 apt1201r6bvr mil-std-750 o-247ad +3pt1201 diode sm i600n	PDF
Contextual Info: A P T 1 201R 6 B V R ADVANCED W 7Æ P o w e r T e c h n o lo g y sa 1200V i.6oon POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	o-247 apt1201r6bvr mil-std-750 o-247ad	PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Contextual Info: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original	mj 1504 transistor equivalent arf450 fredfets transistors mj 1504 +6apt1201r2bll apt60gf120jrd apt60m75jvr apt100s20b apt4014bvr apt1208	PDF
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	mil-prf-19500 iso9001 apt6015lvr 5020bn +8apt6011lvfr arf450 5017bvr apt2*61d120j fredfets apt8015jvr apt100gf60lr apt5014lvr	PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Contextual Info: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original	apt100gf60lr 1200 volt mosfet fredfets sot-227 footprint +6apt75gp120jdf3 apt609rk3vfr apt8075bvr apt5010jvr apt20m19jvr apt1001rbvr	PDF
Contextual Info: A • R W .\A A P T 12 0 1 R 6 B V R dvanced pow er Te c h n o l o g y “ 8a 1200V 1.600Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	o-247 apt1201r6bvr	PDF