APT6032AVR Search Results
APT6032AVR Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT6032AVR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 54.23KB | 4 | ||
| APT6032AVR | Advanced Power Technology | POWER MOS V 600V 17.5A 0.320 Ohm | Original | 63.16KB | 4 |
APT6032AVR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: APT6032AVR 600V 17.5A 0.320W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt6032avro-204ae | |
PT603Contextual Info: • R APT6032AVR A d va n ce d W /Æ PO W ER Te c h n o l o g y 600v 17.5a 0.320a POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
apt6032avrpt6032a00a/psil-std-750+1 | |
APT6032AVR
Abstract: TO-204AE Package
|
Original |
apt6032avro-204aeto-204ae package | |
|
Contextual Info: APT6032AVR 0.320Ω Ω 600V 17.5A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt6032avrmil-std-750o-204ae | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
|
Original |
mil-prf-19500iso9001apt10026jnapt1004rbn+8 | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
|
Original |
mil-prf-19500iso90015017bvr40814+8 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
|
Original |
mil-prf-19500iso9001apt6015lvr5020bn+8 | |
APT5012Contextual Info: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature |
Original |
apt5019hvrapt5026hvrapt4014hvrapt4018hvr+6 |