APT5026HVR Search Results
APT5026HVR Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT5026HVR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 61.41KB | 4 |
APT5026HVR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: APT5026HVR 500V 18.5A 0.26Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt5026hvro-258mil-std-750 | |
74 diodeContextual Info: APT5026HVR 500V 18.5A 0.260Ω POWER MOS V TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
apt5026hvro-25874 diode | |
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Contextual Info: • R ADVANCED APT5026HVR W.\Ap o w e r M T e c h n o lo g y 500V 18.5A 0.26Í2 POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
apt5026hvro-258il-std-750 | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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Original |
mil-prf-19500iso9001apt10026jnapt1004rbn+8 | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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Original |
mil-prf-19500iso90015017bvr40814+8 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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Original |
mil-prf-19500iso9001apt6015lvr5020bn+8 | |
APT5012Contextual Info: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature |
Original |
apt5019hvrapt5026hvrapt4014hvrapt4018hvr+6 |