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    APT5012 Search Results

    APT5012 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT5012
    Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF 63.2KB 4
    APT5012JN
    Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF 62.2KB 4
    APT5012JN
    Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 43A ISOTOP Original PDF 67.01KB
    APT5012LNR
    Advanced Power Technology Power MOS IV, TO-264 Scan PDF 99.58KB 2
    APT5012WVR
    Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF 63.2KB 4
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    APT5012 Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc APT5012WVR

    Mosfet _ CUSTOM, Projected EOL: 2049-02-05 - Contact for Pricing
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Microchip Technology Inc APT5012WVR 28 Weeks
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    Microchip Technology Inc APT5012LNRG

    MOSFET MOS 4 Rugged 500 V 120 mOhm TO-264, Projected EOL: 2046-04-30 - Contact for Pricing
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Microchip Technology Inc APT5012LNRG 28 Weeks
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    APT5012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


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    apt5012jnu25012jnu2ot-227page68 PDF

    Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    apt5010jnapt5012jne1455925010jn+35012jnapt5010/5012jnot-227 PDF

    Contextual Info: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd


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    apt5012jnu35012jnu3 PDF

    c 503 K

    Abstract: lg ds 325
    Contextual Info: A dvanced P o w er Te c h n o lo g y APT5012JNU3 500V 43A 0.120 ISOTOP* Single Die M O S F E T and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd All Ratings: Tc = 25°C unless otherwise specified.


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    apt5012jnu35012jnu3ot-227c 503 k+1lg ds 325 PDF

    Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D wV o k APT5012JNU2 O s ISOTOP® POWER MOS IV< 500V 43A 0.120 Single Die M OSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS


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    apt5012jnu25012jnu2ot-227 PDF

    5010JN

    Abstract: APT5010 5012JN APT 5060
    Contextual Info: A D VA N CED PO W ER Te c h n o lo g y APT5010JN APT5012JN ISOTOP* 500V 500V 48.0 A 0.10Q 43.0 A 0.12Q S W 'U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


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    e1455925010jn5012jnapt5010/5012jn+3ot-227apt5010apt 5060 PDF

    Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5012LNR O S POWER MOS IV 500V 42.0A 0.12Q AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS 'd All Ratings: T c = 25°C unless otherwise specified. Parameter


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    apt5012lnro-264aamil-std-750 PDF

    APT5012LNR

    Abstract: diode AR s1 56 XS16
    Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT5012LNR O s POWER MOS IV‘ 500V 42.0A 0.12a AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM R A T IN G S Symbol V DSS 'dm V GS V GSM All Rutinn*- T - Parameter Drain-Source Voltage


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    apt5012lnrmil-std-750o-264aadiode ar s1 56+1xs16 PDF

    Contextual Info: APT5012WVR 500V 40A 0.120Ω POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    apt5012wvro-267 PDF

    Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT5012WVR 500v 40a 0.120Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt5012wvrapt5012wo-267 PDF

    APT5012LNR

    Abstract: max8700 APT5012LN APT5012L 1/Detector/"Detector IC"/"CD"/APT5012LNR
    Contextual Info: ADVANCED RO W ER Te c h n o l o g y O D O APT5012LN R s PO W ER M O S IV® 500V 42.0A 0.12^ A V A LA N C H E RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T I N G S A ll Ratings: T c = 2 5 CC un less otherw ise sp ecified .


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    apt5012lnapt5012lnrmax8700apt5012l+11/detector/"detector ic"/"cd"/apt5012lnr PDF

    5012JN

    Abstract: APT5012JNU3 APTS012JNU3 APT5012
    Contextual Info: A dvanced P o w er Te c h n o l o g y O D O A rm m m APT5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T


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    apt5012jnu35012jnu3ot-22700dlb+35012jnapts012jnu3apt5012 PDF

    APT5012JNU3

    Contextual Info: A dvanced P o w er Te c h n o l o g y ' -O A APT5012JNU3 500V 43A 0.12Í2 ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd I I DM’ IM V GS PD t j -t s i g All Ratings: = 2 5 °C unless otherwise specified.


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    apt5012jnu35012jnu3ot-227 PDF

    APT5010

    Abstract: LD 1170
    Contextual Info: A dvanced P o w er Te c h n o l o g y O D O APT5010JN APT5012JN S ISOTOP 500V 500V 48.0A 0.1 Oí2 43.0A 0.1 2Ü. "UL Recognized" File No. E145592 S POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol APT 5010UN APT


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    apt5010jnapt5012jne1455925010un+45012jot-227apt5010ld 1170 PDF

    Contextual Info: ADVANCED POWER Te c h n o l o g y 0 APT5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2


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    apt5012jnu25012jnu2ot-227 PDF

    APT5012JNU2

    Abstract: ST-200 transformer DIODE BAT 17
    Contextual Info: A d van ced R o w er Te c h n o l o g y APT5012JNU2 ISOTOP® 500V 43A 0.120 Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" P O W E R M O S IV ‘ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm 1V m


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    apt5012jnu25012jnu2ot-227st-200 transformer+1diode bat 17 PDF

    APT5012JNU2

    Abstract: tl3060 rrmk 1
    Contextual Info: A dvanced P o w er Te c h n o l o g y APT5012JNU2 500V 43A 0.12Í2 ISOTOP® PO W ER MOS IV N -C H A N N E L ENHANCEM ENT M ODE HIGH VOLTAGE POW ER M OSFETS MAXIMUM RATINGS Symbol V D SS All Ratings: T c = 25°C unless otherwise specified. Parameter UNIT


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    apt5012jnu25012jwu2ot-227tl3060+1rrmk 1 PDF

    APT5012LNB

    Abstract: APT5012LNR APT5012L
    Contextual Info: ADVANCED PO W ER Te c h n o lo g y O D APT5012LNR Ô S 3* WER MOS 500V 42.0A 0.12Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol VDSS 'o ' dm VGS VGSM All Ratings: T c = 25°C unless otherwise specified.


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    apt5012lnrmil-std-750-264aapt5012lnb+1apt5012l PDF

    MAC202

    Abstract: led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC
    Contextual Info: INDEX Order Code Description Manufacturer Page Number ADC12130CIN Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converter with MUX and Sample/Hold LM2587 Series Simple Switcher 5A Flyback Regulator LM2594N50 Simple Switcher® Power Converter LM50CIM3


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    adc12130cin12-bitlm2587lm2594n50+15lm50cim3lm6171binlp2980im5-50ca3338ehfa1103iphip4080aipmac202led matrix 5x7 codingmac-202si9120djxr215cpirf60schematic diagram of laptop inverterschematic diagram dc-ac welding inverter circuitlaptop lcd inverter schematic PDF

    Contextual Info: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN


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    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


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    mil-prf-19500iso9001apt10026jnapt1004rbn+8apt10050jnfredfetsapt8030jnapt4020bnapt5010lvfrapt5014lvrarf444apt10m09lvr PDF

    5017BVR

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    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    mil-prf-19500iso90015017bvr40814+85020bn1431 tapt5010lvrapt1001rblcapt10050apt30m85bvrapt5020blcapt2x101d60 PDF

    800w power amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
    Contextual Info: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager


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    apt950256mhz1000watt300vdc+12u-134apt9303800w power amplifier circuit diagram1200w power amplifier circuit diagramamplifier circuit diagram class d 1000w1000w power amplifier circuit diagram1000 watts amplifier schematic diagram with part1200w power amplifieramplifier circuit diagram 1000 watt300w mosfet power amplifier circuit diagram1200w amplifiergood rf construction practices and techniques PDF

    APT802R4KN

    Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
    Contextual Info: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED


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