APT10050 Search Results

Contextual Info: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT10050JVR 19A 0.500Ω 1000V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10050JVFR

Contextual Info: APT10050JVFR 19A 0.500Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10050B2VFR

Abstract: APT10050LVFR
Contextual Info: APT10050B2VFR APT10050LVFR 1000V 21A 0.500W B2VR POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10050B2VR

Contextual Info: APT10050B2VR 21A 0.500Ω 1000V POWER MOS V T-MAX™ Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT10050JVFR 19A 0.500Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

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Abstract: byv06
Contextual Info: A DV A NC ED POWER TECHNOLOGY b lE OEST'ìO'ì D 0000Û33 T74 MAVP i A d v a n ced Q P 4 1 po w er Tec h n o lo g y APT10050CFN 1000V 22.0A 0.50 £2 APT9050CFN 900V 22.0A 0.50 Q O S E Q W E FLM O S IV L N - CHANNEL ENHANCEMENT MODE HIGH, VOLTAGE POWER UOSFETS

Contextual Info: • R r M A d van ced APT10050B2VR po w er Te c h n o lo g y 10 0 0 v 21 a o .s o o q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced P ow er Te c h n o l o g y APT10050JN 1000V 20.5A 0.50Í2 ISOTOP® S Ù " U L Recognized" File No. E145592 S POWER MOS IV« SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT10050LVFR A dvanced P o w er Te c h n o l o g y 1000V POWER MOSV 21A 0.500Í2 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: A d van ced APT10050B2VR po w er Te c h n o l o g y 1000V 21A 0.5000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT10050JN

Abstract: DSA0059686 10050JN N mos 100v 100A
Contextual Info: S S D G 27 2 T- D G SO APT10050JN 1000V 20.5A 0.50Ω S ISOTOP "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

Contextual Info: APT10050LVFR 21A 0.500Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10050B2LC

Abstract: APT10050LLC
Contextual Info: APT10050B2LC APT10050LLC 1000V 21A 0.500W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

Contextual Info: APT10050LVFR A D V A N CED PO W ER Te c h n o l o g y 1000V POWER MOS V 21A 0.500Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT9050CFN

Contextual Info: r □BSTTO^ 0000033 T7M BiAVP blE T> ADVANCE» POWER TECHNOLOGY A D V A N C ED P O W ER T e c h n o lo g y APT10050CFN 1000V 22.0A 0.50 £i APT9050CFN 900V 22.0A 0.50 ß P O W E R M O S IV N - CHANNEL ENHANCEMENT MODE HIGH;, 1 VOLTAGE POWER MOSFETS MAXIMUM RATINGS

APT10050LVFR

Contextual Info: APT10050LVFR 21A 0.500Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

10050JN

Abstract: apt10050jn
Contextual Info: A dvanced P o w er Te c h n o lo g y APT10050JN ISO TOP* M POWER MOS IVe 1000V 20.5A 0.50Q "UL Recognized" File No. El 45592 S SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd W A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw is e sp e cifie d .

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Abstract: APT10050LVR
Contextual Info: APT10050LVR A DVAN CED P ow er Te c h n o lo g y 1000V 21A 0.500Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing der >ity and reduces the on-resistance. Power MOS V™

APT10050LVR

Abstract: B21 diode
Contextual Info: APT10050LVFR A d van ced P o w er Te c h n o l o g y ' 1000V POWER MOS V FREDFET 21A 0.500Í2 I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: O A dvanced P ow er T e c h n o lo g y 9 D APT10050JN ° s w 1000V 20.5A 0.500 ? ISOTOP 5 M " U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol ^DSS

APT10050B2LC

Abstract: APT10050LLC
Contextual Info: APT10050B2LC APT10050LLC 1000V 21A 0.500W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

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Contextual Info: APT10050JVFR ADVANCED PO W ER Te c h n o l o g y 1000V POWER MOS V 19A 0.500Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10050JVFR 19A 0.500Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®